Palladium-Catalyzed Skeletal Rearrangement of Substituted 2-Silylaryl Triflates via 1,5-C−Pd/C−Si Bond Exchange

A palladium-catalyzed skeletal rearrangement of 2-(2-allylarylsilyl)aryl triflates has been developed to give highly fused tetrahydrophenanthrosilole derivatives via unprecedented 1,5-C−Pd/C−Si bond exchange. The reaction pathways can be switched toward 4-membered ring-forming C(sp²)−H alkylation by tuning the reaction conditions to give completely different products, fused dihydrodibenzosilepin derivatives, from the same starting materials. The inspection of the reaction conditions revealed the importance of carboxylates in promoting the C−Pd/C−Si bond exchange.     

Indirectly Detected DNP-Enhanced 17O NMR Spectroscopy: Observation of Non-Protonated Near-Surface Oxygen at Naturally Abundant Silica and Silica-Alumina

Recent studies have shown that dynamic nuclear polarization (DNP) can be used to detect ¹⁷O solid-state NMR spectra of naturally abundant samples within a reasonable experimental time. Observations using indirect DNP, which relies on ¹H mediation in transferring electron hyperpolarization to ¹⁷O, are currently limited mostly to hydroxyls. Direct DNP schemes can hyperpolarize non-protonated oxygen near the radicals; however, they generally offer much lower signal enhancements. In this study, we demonstrate the detection of signals from non-protonated ¹⁷O in materials containing silicon. The sensitivity boost that made the experiment possible originates from three sources: indirect DNP excitation of ²⁹Si via protons, indirect detection of ¹⁷O through ²⁹Si nuclei using two-dimensional ²⁹Si{¹⁷O} D-HMQC, and Carr-Purcell-Meiboom-Gill refocusing of ²⁹Si magnetization during acquisition. This ²⁹Si-detected scheme enabled, for the first time, 2D ¹⁷O−²⁹Si heteronuclear correlation spectroscopy in mesoporous silica and silica-alumina surfaces at natural abundance. In contrast to the silanols showing motion-averaged ¹⁷O signals, the framework oxygens exhibit unperturbed powder patterns as unambiguous fingerprints of surface sites. Along with hydroxyl oxygens, detection of these moieties will help in gaining more atomistic-scale insights into surface chemistry.     

Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

Raman spectroscopy/mapping is used to investigate the variation of Si phonon wavenumbers, i.e., lower wavenumber (LW ~ 495–510 cm⁻¹) and higher wavenumber (HW ~ 515–519 cm⁻¹) phonons, observed in Si–SiO₂ multilayer nanocomposite (NCp) grown using pulsed laser deposition. Sensitivity of Raman spectroscopy as a local probe to surface/interface is effectively used to show that LW and HW phonons originate at surface (Si–SiO₂ interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling experiment at the site of the desired wavenumber, chosen with the help of Raman mapping. Raman spectra calculations for Si₄₁ cluster with oxygen and hydrogen termination show strong mode at 512 cm⁻¹ for oxygen terminated cluster corresponding to the vibration of surface Si atoms. This supports our attribution of LW phonons to be originating at the Si–SiO₂ surface/interface. These results along with XPS show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and LW phonons originate at the surface of smaller Si nanocrystals. The understanding developed can conclude the ongoing debate on large variation in Si phonon wavenumbers of Si–SiO₂ NCps in the literature. Copyright © 2015 John Wiley & Sons, Ltd.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

O_2在Si掺杂石墨烯上吸附与活化

采用包含色散力校正的密度泛函理论方法(DFT-D)研究了O2在Si掺杂石墨烯(Si-Gra)上吸附与活化.研究结果表明:1)与纯净石墨烯相比,Si掺杂极大的增强了石墨烯对O2的吸附能力.O2的最稳定吸附构型是以Side-on模式吸附在掺杂的Si的顶位,形成O-Si-O三元环.次稳定吸附构型是与Si及近邻的一个C形成O-Si-C-O四元环结构.两个吸附构型对应的吸附能分别为-2.40和-1.93eV;2)O2有两种分解路径:直接分解路径(势垒为0.53eV)和整体扩散后的分解路径(势垒为0.81eV);3)分解之后的两个O原子分别吸附在Si的顶位和相邻碳环的两个碳原子的桥位;4)电子结构分析表明吸附的O2从Si-Gra获得较多电荷,从而被活化.总之,Si-Gra具有较强的催化氧气还原能力,是一种潜在的良好的非金属氧还原催化剂.     

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single-Crystal Si

Lattice thermal conductivity can be reduced by introducing point defect, grain boundary, and nanoscale precipitates to scatter phonons of different wave-lengths, etc. Recently, the effect of electron–phonon (EP) interaction on phonon transport has attracted more and more attention, especially in heavily doped semiconductors. Here the effect of EP interaction in n-type P-doped single-crystal Si has been investigated. The lattice thermal conductivity decreases dramatically with increasing P doping. This reduction on lattice thermal conductivity cannot be explained solely considering point defect scattering. Further, the lattice thermal conductivity can be fitted well by introducing EP interaction into the modified Debye–Callaway model, which demonstrates that the EP interaction can play an important role in reducing lattice thermal conductivity of n-type P-doped single-crystal Si.