The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature

The effects of ⁶⁰Co (γ-ray) irradiation on the electrical and dielectric properties of Al-TiW-Pd₂Si/n-Si Schottky diodes (SDs) have been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and 500 KHz. The corrected capacitance and conductance values were obtained by eliminating the effect of series resistance (R_s) on the measured capacitance (C_m) and conductance (G_m) values. The high-low frequency capacitance (CHF-CLF) method given in [12] as N_ss = (1/qA) [((1/C_LF) − (1/C_ox))⁻¹ −  ((1/C_HF) − (1/C_ox))⁻¹] was successfully adapted to the before-after irradiation capacitance given in this report as N_ss = (1/qA) [((1/C_bef) − (1/C_ox))⁻¹ − ((1/C_after) − (1/C_ox))⁻¹] for the analyzing the density of interface states. The N_ss-V plots give a distinct peak corresponding to localized interface states regions at metal and semiconductor interface. The experimental values of the ac electrical conductivity (σ_ac), the real (M′) and imaginary (M″) parts of the electrical modulus were found to be strong functions of radiation and applied bias voltage, especially in the depletion and accumulation regions. The changes in the dielectric properties in the depletion and accumulation regions stem especially from the restructuring and reordering of the charges at interface states and surface polarization whereas those in the accumulation region are caused by series resistance effect.     

Synthesis and Properties of Hyperbranched Polyimides Combined with Silica

Summary: The novel hyperbranched polyimide - silica hybrid materials containing theoretically 16 wt% of an inorganic phase were prepared via a sol-gel process. An amine terminated polyimide precursor (hyperbranched polyamic acid) was prepared from commercially available monomers 4,4′,4″-triaminotriphenylmethane and 4,4′-oxydiphthalic anhydride in molar ratio 1:1. Tetramethoxysilane and/or 3-glycidoxypropyltrimethoxysilane (also used as a coupling agent) were used as silica precursors. During thermal exposition the polyimide precursor was transformed to hyperbranched polyimide and hydrolyzed alkoxy groups reacted mutually to form silica. The final products were self-standing films, whose structure was characterized by using IR and ¹³C and ²⁹Si solid state NMR spectroscopy. The influence of the amount of silica and/or coupling agent on their structure and thermal properties was described.     

RE2O3-Al2O3-SiO2玻璃连接氮化硅合成复相陶瓷的研究

采用Ｙ２Ｏ３－Ａｌ２Ｏ３－ＳｉＯ２－Ｘ稀土玻璃进行氮化硅复相陶瓷的连接。用四点弯曲方法测定不同连接工艺下的连接强度。并对连接界面进行ＳＥＭ、ＥＰＭＡ和ＸＲＤ分析。液相钎料玻璃在界面上与氮化硅反应，形成氮化硅／Ｓｉ２Ｎ２Ｏ／Ｙ（Ｌａ）－Ｓｉａｌｏｎ玻璃／Ｙ（Ｌａ）－Ｓｉａｌｏ玻璃的梯度层界面。接头强度随着保温时间、妆温度的增加，先增后。 在ＹＡＳ钎料中添加氧化镧，可以提高接头的高温强度。ＬａＹＯ３的     

Phonon-assisted tunneling process in amorphous silicon nanostructures and GaAs nanowires

Experimental results on the current–voltage (I–V) characteristics of amorphous Si nanostructures reported by Irrera et al. [A. Irrera, F. Iacona, I. Crupil, C.D. Presti, G. Franzo, C. Bongiorno, D. Sanfilippo, G. Di Stefano, A. Piana, P.G. Fallica, A. Canino, F. Priolo, Nanotechnology 17 (2006) 1428] are reinterpreted in terms of a phonon-assisted tunneling model. It is shown that temperature dependence of current can be caused by the temperature dependence of electron tunneling rate from traps in the metal–semiconductor interface to the conduction band of the semiconductor. A good fit of experimental data with the theory is achieved in all measured temperature range from 30 to 290 K using for calculation the effective mass of 0.5m_e, and for the phonon energy the value of 12 meV. An advantage of this model over that of Irrera et al. used model is the possibility of describing the behavior of I–V data measured at both high and low temperatures with the same set of parameters characterizing this material. The temperature-dependent I–V data by Schricker et al. [A.D. Schricker, F.M. Davidson III, R.J. Wiacek, B.A. Korgel, Nanotechn. 17 (2006) 2681.] of GaAs nanowires, are also explained on the basis of this model.     

High resolution imaging of contact potential difference using a novel ultrahigh vacuum non-contact atomic force microscope technique

An ultrahigh vacuum scanning Kelvin probe force microscope (UHV SKPM) based on the gradient of electrostatic force was developed using the technique of a UHV non-contact atomic force microscope (NC-AFM) capable of atomic level imaging, and used for simultaneous observation of contact potential difference (CPD) and NC-AFM images. The CPD images with a potential resolution of less than 10 meV were observed in the UHV SKPM, demonstrating an atomic level resolution. The change of potential corresponding to the charges on the insulated surface of polypropylene have been observed in UHV SKPM. We also demonstrated a reliable method to obtain the CPD from the bias voltage dependence curves of the frequency shift in all of the scanning area. The results are consistent with comparing the barrier height images in that the work functions of adatoms are greater than the work function of corner holes.     

类锂硅离子能级结构及软X射线激光光谱理论计算

本文采用Hartree-Fock自洽场方法,从理论上计算出类锂硅离子1s~2nl(n=2～7,l=0～5)各能级能量,并给出在极紫外(波长小于400(?))范围内各跃迁谱线的光谱性质、波长、振子强度和跃迁几率.对实验中已实现软X射线激光的跃迁(5d-3p,5f-3d,6d-3p,6f-3d),计算所得的跃迁波长与实验值完全相符.与现有文献的波长比较,相对误差不超过1%.     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

Mechanical and thermodynamic properties of the monoclinic and orthorhombic phases of SiC_2N_4 under high pressure from first principles

First principles calculations are preformed to systematically investigate the electronic structures, elastic and thermodynamic properties of the monoclinic and orthorhombic phases of Si C2N4 under pressure. The calculated structural parameters and elastic moduli are in good agreement with the available theoretical values at zero pressure. The elastic constants of the two phases under pressure are calculated by stress–strain method. It is found that both phases satisfy the mechanical stability criteria within 60 GPa. With the increase of pressure, the degree of the anisotropy decreases rapidly in the monoclinic phase, whereas it remains almost constant in the orthorhombic phase. Furthermore, using the hybrid density-functional theory, the monoclinic and orthorhombic phases are found to be wide band-gap semiconductors with band gaps of about 2.85 e V and 3.21 e V, respectively. The elastic moduli, ductile or brittle behaviors, compressional and shear wave velocities as well as Debye temperatures as a function of pressure in both phases are also investigated in detail.