首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   854篇
  免费   3篇
化学   302篇
晶体学   7篇
力学   52篇
数学   103篇
物理学   393篇
  2022年   13篇
  2021年   28篇
  2020年   16篇
  2019年   27篇
  2018年   21篇
  2017年   37篇
  2016年   50篇
  2015年   16篇
  2014年   30篇
  2013年   32篇
  2012年   27篇
  2011年   26篇
  2010年   32篇
  2009年   31篇
  2008年   29篇
  2007年   24篇
  2006年   27篇
  2005年   15篇
  2004年   19篇
  2003年   17篇
  2002年   17篇
  2001年   22篇
  2000年   15篇
  1999年   7篇
  1998年   7篇
  1997年   17篇
  1994年   7篇
  1991年   10篇
  1990年   10篇
  1989年   12篇
  1988年   7篇
  1987年   7篇
  1986年   8篇
  1985年   5篇
  1984年   9篇
  1982年   7篇
  1981年   13篇
  1979年   9篇
  1978年   9篇
  1977年   9篇
  1976年   18篇
  1975年   16篇
  1974年   7篇
  1973年   9篇
  1972年   9篇
  1971年   10篇
  1970年   14篇
  1969年   5篇
  1968年   6篇
  1967年   12篇
排序方式: 共有857条查询结果,搜索用时 15 毫秒
21.
  相似文献   
22.
The tunneling current in a junction formed by graphene half-planes and bilayer graphene with two possible packing types and two possible orientations of the crystal lattice is calculated by the Green’s function technique in the framework of the tight-binding approximation. It is shown that the band structure of graphene oriented toward the junction by the armchair-type edges leads to a power-law dependence of the tunneling current on applied voltage being specific for each specific kind of graphene. The characteristic features of this dependence are determined by the change in the number of transport channels with the growth of the applied voltage. For all junctions under study with zigzag edges oriented toward each other, it is found that the tunneling current exhibits characteristic peaks related to the existence of the localized edge states. The effects induced by the gate voltage are also studied. For the structures with zigzag edges, it is shown that the effect of switching off/on takes place for the junctions. The junctions formed by the graphene armchair edges do not exhibit any pronounced switching phenomena and the growth of the bias voltage results in higher values of the conductivity.  相似文献   
23.
24.
The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.  相似文献   
25.
26.
Moscow University Chemistry Bulletin - Abstract—An immunochromatographic test system for the combined analysis of two cardiomarkers, such as fatty acid binding protein (FABP) and troponin I...  相似文献   
27.
Recently it has been shown experimentally by the authors that a highly twisted thin nematic cell at low temperatures can separate into a smectic A region in the middle of the cell surrounded by twisted nematic layers at the boundaries. In this case the twist is expelled into the nematic layers and the nematic–smectic A transition temperature is strongly depressed. We present a thermodynamic theory of such a phase transition in a twisted nematic cell, taking into account that the smectic A slab inside the nematic cell can be stable only if the decrease of free energy in the smectic region overcomes the increase in distortion energy of the twist deformation in the nematic layers plus the energy of the nematic–smectic A interface. In such a system the equilibrium thickness of the smectic A slab corresponds to the minimum of the total free energy of the whole cell, which includes all the bulk and surface contributions. Existing experimental data are at least qualitatively explained by the results of the present theory. This opens a unique possibility to study the properties of the nematic–smectic interface which is perpendicular to the smectic layers.  相似文献   
28.
Physics of the Solid State - The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale...  相似文献   
29.
Journal of Applied Mechanics and Technical Physics - A method for determining the empirical dependence of the rheological properties of rocks on stresses has been developed and tested in...  相似文献   
30.
Annals of Global Analysis and Geometry - We study a natural class of LCK manifolds that we call integrable LCK manifolds: those where the anti-Lee form $$\eta $$ corresponds to an integrable...  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号