α-十四烷基-DOTA及其钆(Ⅲ)螯合物的合成与表征(英)

Synthesis and characterization of the ligand, [10-(α-tetradecylcarboxymethyl)-1,4,7,10-tetraazacyclododecane-1,4,7-triacetic acid, H₄L] and its Gd(Ⅲ) chelate are described. Protonation constants for H₄L(lgK_i^H = 10.62, 9.50, 4.74, 4.12) and the stability constant for GdL^-(lgK_GdL^-= 24.60) were determined by potentiometric titrations. The results obtained show that the basicity of the ligand is not significantly altered and the ligand still maintains the strong chelating properties of the parent DOTA after introduction of a linear chain tetradecyl group at the acetic side chain of DOTA.     

铬(Ⅵ)-过氧化氢-鲁米诺化学发光法测定痕量抗坏血酸

基于抗坏血酸与铬(Ⅵ)的还原反应产生的铬(Ⅲ)催化鲁米诺-过氧化氢发光体系的研究, 建立了一种快速测定痕量抗坏血酸的新方法.该方法线性范围为8.0×10-9～1.6×10-4 mol/L,检出限为8.0×10-9 mol/L,对1.0×10-6 mol/L抗坏血酸11次平行测定的RSD为0.9%.用于医用维生素C片剂中抗坏血酸含量的测定, 结果令人满意.     

N-烷基-D03A钆（Ⅲ）螯合物的合成、稳定性与弛豫性能

合成了用直链烷基修饰的D03A衍生物（H3L）：N0己基-DO3A（2）、N-癸基-D03A（3）和N-十六烷基-DO3A（4）及其钆（Ⅲ）螯合物,测得化合物2、3和4的第1级质子化常数（1g K1^H）分别为10．72、10．68和10．52;相应的钆（Ⅲ）螯合物的稳定常数（1g KGdL）分别为20．50、19．60和19．25;相应的钆（Ⅲ）螯合物的水质子弛豫率（R1）分别为4．88、4．96和5．12L／（mmol·S）。结果表明,在DO3A的1,4,7,10．四氮杂环十二烷骨架上引入直链烷基,其碱性略有改变,但仍保持DO3A母体的强螯合性能和水质子弛豫率。     

阳极氧化TiO2纳米管阵列的制备与掺杂

近年来,TiO₂纳米管阵列的制备与应用得到了广泛的研究。阳极氧化法制备TiO₂纳米管阵列具有工艺简单、成本低廉、易于放大等优点,引起了极大关注。本文综述了阳极氧化法制备TiO₂纳米管阵列的研究现状,基于TiO₂纳米管阵列在阳极氧化过程中的生长机理,讨论了决定阳极氧化TiO₂纳米管阵列形成的主要因素。结合本组的研究工作,总结了如何通过改变电压、升压速率、电解液、温度和氧化时间,实现纳米管管径、管壁厚度、管长的有效控制,提高TiO₂纳米管阵列的表面形貌质量。最后介绍了TiO₂纳米管阵列掺杂改性方面的研究进展。     

古油层和残余油层的定量颗粒荧光响应

利用定量颗粒荧光(QGF和QGF-E)技术研究了古油层和残余油层的定量颗粒荧光响应。结果表明,古油层与现今油层具有很强的QGF荧光响应,利用QGF荧光响应识别出TZ421井存在100 m古油层,表明早期油气充注规模大,但后期发生泄漏,导致油水界面上升到现今的3 620 m。利用QGF-E荧光响应识别出60m残余油层,说明发生多期古油层泄漏,第一期泄漏使油水界面上升到残余油水界面(3 680 m),第二期泄漏发生在近期,形成现今油水界面。现今凝析气层中的强QGF荧光响应表明凝析气顶形成于最后一期天然气充注。     

PEG-PDMAEMA-PBMA三嵌段聚合物的合成及其自组装行为

采用连续原子转移自由基聚合途径制备了两亲性三嵌段聚合物聚乙二醇-聚甲基丙烯酸N,N-二甲氨基乙酯-聚甲基丙烯酸正丁酯(PEG-PDMAEMA-PBMA),利用核磁共振氢谱(1 H NMR)和凝胶渗透色谱(GPC)对聚合物结构及分子量进行了表征.动态光散射(DLS)和透射电镜(TEM)结果证实该聚合物的自组装行为具有pH敏感性.通过改变水溶液的pH值可以精确地调控聚合物的自组装行为,从而获得胶束、纳米球、大囊泡和小囊泡等多种自组装结构.这些自组装结构的形成与PDMAEMA链段的质子化程度和聚合物的亲疏水平衡有关.     

Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

The epitaxial-Si(epi-Si) growth on the crystalline Si(c-Si) wafer could be tailored by the working pressure in plasmaenhanced chemical vapor deposition(PECVD).It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon(a-Si:H)/c-Si interface is suppressed at high pressure(hp) and occurs at low pressure(1p).The hp a-Si:H,as a purely amorphous layer,is incorporated in the 1p-epi-Si/c-Si interface.We find that:(i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough;(ii) with the increase of the inserted hp layer thickness,lp epi-Si at the interface is suppressed,and the fraction of a-Si:H in the thin films increases and that of c-Si decreases,corresponding to the increasing minority carrier lifetime of the sample.Not only the epitaxial results,but also the quality of the thin films at hp also surpasses that at lp,leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase.     

基于目标物调控原位生成量子点的杀扑磷荧光传感新方法研究

基于目标物调控原位生成荧光物质,建立了硫化镉量子点(CdS QDs)介导的荧光传感器,实现了大米中有机磷农药杀扑磷的高灵敏、高选择性分析检测.乙酰胆碱酯酶(AChE)催化水解硫代乙酰胆碱(ATCh)生成硫代胆碱(TCh),其作为稳定剂诱导原位生成大量CdS QDs,体系荧光信号增强.当目标农药杀扑磷存在时,AChE活性...     

Polymerization of Silicon-Doped Heterofullerenes： an Ab Initio Study

We perform the calculations on geometric and electronic structures of Si-doped heterofullerene C5oSi10 and its derivatives, a C40Si20-C40Si20 dimer and a C40Si20-based nanowire by using density-functional theory, The optimized configuration of the C40Si20-based nanowire exhibits a regular dumbbell-shaped chain nanostructure. The electronic structure calculations indicate that the HOMO-LUMO gaps of the heterofullerene-based materials can be greatly modified by substitutionally doping with Si atoms and show a decreasing trend with increase cluster size. Unlike the band structures of the conventional wide band gap silicon carbide nanomaterials, the C40Si20- based nanowire has a very narrow direct band gap of 0.087eV.     

信号灯控制下的主道双车道入匝道系统交通流特性研究

采用元胞自动机模型研究了具有信号灯控制的主道为双车道的入匝道系统交通流特性.将信号灯设置在入匝道口处,通过信号灯来引导主道和匝道上的车辆通行.分析了信号灯控制对主道与匝道的车流量、系统通行能力以及入匝道口处的车流平均速度的影响.通过相图比较,说明信号灯控制的双车道入匝道系统能模拟出比信号灯控制的单车道入匝道系统更加符合实际的交通流特性.与姜锐提出的模型［Jiang R 2003 J. Phys. A 36 11713］结果相比,信号灯控制下的匝道系统的交通流状态得到改善并且道路通行能力有所提 关键词： 交通流 元胞自动机 入匝道系统 信号灯