教学评一致性视域下金属单元复习课的实践*

分析金属知识在中考和教材中的地位,针对当前单元复习教学中存在的问题,依据教学评一致性原则,将“金属知识”的单元复习在“订书钉”为主要线索的探究活动中展开,以此激发学生的学习兴趣,优化学生单元知识结构,发展学生分析问题、解决问题的能力,同时提高学生对学科价值的认识。     

不同细料含量土石混合料塑性行为离散元模拟

土石混合料是指由大粒径的块石和作为填充成分的细粒土组成的二元混合料, 其塑性行为与细料含量密切相关. 目前对细粒含量如何影响土石混合料塑性行为及其细观机制的研究尚不充分, 为此本文开展了不同细料含量土石混合料的二维离散元数值模拟, 基于二阶功失稳准则与细观力学理论, 探究了细料含量对石料骨架土石混合料失稳特性与非关联流动特性的影响, 并揭示了细料含量影响土石混合料塑性力学行为的细观机制. 研究结果表明, 细颗粒可通过限制集合体塑性变形从而起到促进集合体整体稳定的作用; 细颗粒控制颗粒集合体塑性变形的方向(即塑性势面法方向), 随着细料含量增大, 土石混合料的塑性势面法方向和屈服面法方向之间的夹角减小, 非关联流动性减弱, 材料分岔失稳区域变窄; 尽管加入到石颗粒中的部分细颗粒与石颗粒共同承担骨架作用, 但是细颗粒的加入不影响颗粒集合体的力学状态, 不改变材料屈服面法方向. 相关研究结果可为建立考虑细料含量的土石混合料弹塑性本构模型提供理论依据.      

焊接管结构的非线性推覆简化模型

有限元分析方法中,采用三维实体单元对焊接管结构进行离散是最为精确的建模方法,但对三维实体模型分析时会划分大量单元,导致计算时间冗长。工程中常把焊接管结构简化为刚架模型,即刚性连接的杆系系统。这种建模方式忽略了节点的局部柔度,过高地估计了整体结构的刚度,使计算结果偏于危险。为解决上述问题,在节点处引入虚拟梁单元,使其等效模拟节点的局部变形,还原支管真实长度。为了验证节点柔度对焊接管结构的影响,对典型的焊接管结构缩尺,进行了推覆试验。分别采用壳单元模型、刚架模型及引入虚拟梁单元的简化模型进行有限元模拟,并与试验结果对比分析。结果表明,刚架模型会过高的估计焊接管结构的刚度,而简化模型计算结果与壳模型、试验结果较为吻合。     

Ce∶LuAG闪烁晶体的生长研究

Ce∶LuAG晶体是一种性能优良的闪烁材料,但采用提拉法生长Ce∶LuAG时,经常出现开裂和包裹物缺陷。本文通过理论与实践相结合的方式分析了温度梯度、提拉速度、晶体旋转速度和热应变等因素对晶体产生缺陷的影响,并提出了解决办法,给出了适合生长优质Ce∶LuAG晶体的工艺参数:熔体上方温度梯度在5 ℃/mm左右,放肩角度在30°~60°,提拉速度1.0~1.5 mm/h,晶体旋转速度15~25 r/min。最后成功生长出直径30 mm、等径长50 mm质量较为完好的Ce∶LuAG单晶,晶体内核心面积小。     

物理学咬文嚼字之三十六 Στοιχειαιο

Euclid的《几何原本》同化学术语中的化学计量比都来自希腊语Στοιχεια■ο,反映的是古希腊原子论的精神.     

Phase-field simulation of dendritic growth in a binary alloy with thermodynamics data

This paper simulates the dendrite growth process during non-isothermal solidification in the Al-Cu binary alloy by using the phase-field model. The heat transfer equation is solved simultaneously. The thermodynamic and kinetic parameters are directly obtained from existing database by using the Calculation of Phase Diagram （CALPHAD） method. The effects of the latent heat and undercooling on the dendrite growth, solute and temperature profile during the solidification of binary alloy are investigated. The results indicate that the dendrite growing morphologies could be simulated realistically by linking the phase-field method to CALPHAD. The secondary arms of solidification dendritic are better developed with the increase of undercooling. Correspondingly, the tip speed and the solute segregation in solid-liquid interface increase, but the tip radius decreases.     

The spreading behaviour of perfluoropolyether droplets on solid surfaces

The spread of perfluoropolyether （PFPE） droplets on solid surfaces has been measured from the top-down view through a microscope system. Effects of substrates, molecular weight and end-group functionality on spreading of the PFPE droplets have been studied experimentally and the results were compared with those by molecular dynamics （MD） simulations. Silicon wafer and diamond-like carbon （DLC） substrates were used to study the effect of substrates on spreading. Two types of PFPE, Z-dol and Z-tetraol, with the same chain structure and various molecular weights （2000 and 4000 g/mol） were employed in experiments. Effect of molecular weight has been investigated through comparing the spreading of Z-dol 2000 and Z-dol 4000, and it is found that the increase of molecular weight will decrease the mobility of PFPE. Comparison between spreading of Z-dol and Z-tetraol of the same molecular weight proved that functional end group plays a significant role on the spreading of PFPE, which confirmed the MD simulation results.     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.