Dynamic Behaviour of Nanoscale Electrostatic Actuators

The dynamic behaviour for nanoscale electrostatic actuators is studied. A two parameter mass-spring model is shown to exhibit a bifurcation from the case excluding an equilibrium point to the case including two equilibrium points as the geometrical dimensions of the device are altered. Stability analysis shows that one is a stable Hopf bifurcation point and the other is an unstable saddle point. In addition, we plot the diagram phases, which have periodic orbits around the Hopf point and a homoclinic orbit passing though the unstable saddle point.     

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同,所以可以选择不同的压力使激子和光场处于不同的耦合状态,从而实现对耦合的调谐。利用这种办法,我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小,与以前报道的温度、电场等调谐方式相比,这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度,而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合,得出了正确的Rabi分裂值。     

向量优化问题广义有效点的一个存在性定理

利用集值映射不动点定理及最优化问题与变分不等式的关系给出线性G^↑ateaux可微的锥凸映射的广义有效点的一个存在性定理。     

微尺度效应对螺旋槽干气密封性能的影响

本文引用考虑微尺度效应的雷诺方程,推导出了考虑微尺度效应的螺旋槽干气密封内部流动的近似算法。应用本文提供的算法对文献中干气密封的不同实验工况进行了计算,与相应的实验数据对比,计算结果和实验结果基本符合;切向动量调节系数σv对计算结果在尺度越小时影响越大;考虑微尺度效应时开启力的计算结果更趋于实验数据。     

微扰影响下组合孤波的传输稳定性研究

针对最近发现的高阶非线性薛定锷方程的组合孤波解，我们数值研究了它在受到包括幅度偏离、参数条件偏离以及随机噪声等不同初始扰动后的传输特性。结果表明一定的精确脉冲在不同的扰动下有类似的稳定趋势。     

三维电子散斑干涉技术及其应用研究

通过大错位剪切镜和一作为参考物的压电陶瓷相移器将三个电子散斑干涉系统组成一新的三维电子散斑干涉系统。利用该系统，结合相移技术和图像处理技术，可得到独立的位移场(u,v和w场)。该技术的特点是用三个激光器作为光源，一个压电陶瓷相移器产生参考光并实现相移，CCD摄像机前放置大错位剪切镜以使物光和参考光产生干涉。将该技术应用到柴油发动机零部件测量上，得到了主轴承孔周的三维位移场。     

微通道板及其发展趋势

回顾微通道板发展历史及各阶段的主要技术特征。综述自90年代以来国内外微通道板的研发和生产情况．     

质子入射散裂产物理论研究方法探讨

简要介绍了几种关于中高能质子入射引起散裂反应产物理论计算的方法,以及这些方法的最新发展.比较了这些方法在理论计算中的特点,指出经典外推方法有局限性,量子分子动力学方法和改进后的M C方法的计算结果与实验数据有较好的符合,但是计算量大,而且量子分子动力学方法在与宏观输运理论连接上存在不少的困难.半经验计算方法已经取得了初步的成果,需要根据新的实验结果来对其进行发展. The analysis on spallation product of proton-induced reaction with intermediate energy has important applications, such as astrophysics, biophysics, spallation neutron source, and accelerator-driven system (ADS) etc. In recent year, some theoretical models have been developed to investigate this reaction processes. At present work, we introduce the extrapolated classic theory, the quantum molecule dynamic (QMD) plus statistical decay and fission models, the method of Mento-Carlo and Smiempirical method for...     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.