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101.
 1990年《Physics Today》(今日物理)U.弗里希.S.奥斯萨格《湍流:理论和实验的难题》1月号高雷诺数流体随处可见,人们已从现象上了解了这类流体的许多特性,但是要想建立一套描述这些流体的详细特性的系统理论,则需要做许多新奇的实验。  相似文献   
102.
Recent progress in organic spintronics is given an informative overview, covering spin injection, detection, and trans-port in organic spin valve devices, and the magnetic field effect in organic semiconductors (OSCs). In particular, we focus on our own recent work in spin injection and the organic magnetic field effect (OMFE).  相似文献   
103.
We numerically investigate the thermal entanglements of spins (1/2, 1) and spins (1/2, 1/2) in the three-mixed (1/2, 1, 1/2) anisotropic Heisenberg XXZ spin system on a simple triangular cell under an inhomogeneous magnetic field. We show that the external magnetic field induces strong plateau formation in the pairwise thermal entanglement for fixed parame-ters of the Hamiltonian in the cases of ferromagnetic and antiferromagnetic interactions. We also .observe an unexpected critical point at finite temperature in the thermal entanglement of spins (1/2, 1) for the antiferromagnetic case, while the entanglement of spins (1/2, 1) in the ferromagnetic case and the entanglement of spins (1/2, 1/2) in both ferromagnetic and antiferromagnetic cases almost decay exponentially to zero with increasing temperature. The critical point in the en-tanglement of spins (1/2, 1) in the antiferromagnetic case may be a signature of the quantum phase transition at finite temperature.  相似文献   
104.
We investigate the competing effects of spin-orbit coupling and electron--electron interaction on a kagome lattice at 1/3 filling. We apply the cellular dynamical mean-field theory and its real-space extension combined with the continuous time quantum Monte Carlo method, and obtain a phase diagram including the effects of the interaction and the spin-orbit coupling at T = 0. 1t, where T is the temperature and t is the hopping energy. We find that without the spin-orbit coupling, the system is in a semi-metal phase stable against the electron--electron interaction. The presence of the spin-orbit coupling can induce a topological non-trivial gap and drive the system to a topological insulator, and as the interaction increases, a larger spin--orbit coupling is required to reach the topological insulating phase.  相似文献   
105.
We find for the first time that a model Hamiltonian or s-wave superconductors in tne presence or spm-orbit interactions and a Zeeman field is exactly solvable. Most intriguingly, based on the exact solutions, a novel type of Fulde Ferrel-Larkin-Ovchinnikov ground state is rigorously revealed, in which the center-of-mass momentum of the fermion pair is proportional to the Zeeman field. We also generalize our exact analysis to the spin-orbit- coupled Bose-Einstein condensate.  相似文献   
106.
Based on the solvable spin-1/2 Heisenberg chain we demonstrate how two many-body systems are entangled due to their partial entanglement. The entanglement wave in the two spin chains displays a damped oscillation if the spin number is N 〉 3, and only propagates with a certain velocity depending on the coupling constant J. Moreover, the entanglement wave will be reflected on the other ends of the two spin chains. A simple scheme for transferring some special two-qubit states to other two distant qubits is also proposed.  相似文献   
107.
In accordance with the recent experimental progress of the controllable spin-spin interactions, the Heisenberg model after an interaction quench is discussed. The Hamiltonian of the system out of equilibrium is introduced and treated by the flow equation method. As a result, the spectrum and zero-point spin deviation are obtained with the help of time-evolved operators. Additionally, other methods are applied to verify the results in mathematics. It is found that the observables show an oscillating behavior. The feasible experimental scheme of the concerned scenario is also mentioned.  相似文献   
108.
Engineering Double-Walled Carbon Nanotubes by Ar Plasma   总被引:1,自引:0,他引:1       下载免费PDF全文
Double-walled carbon nanotubes (DWCNTs) have been found to be promising nano-materials for nano-mechanical and nano-electrical devices due to their double-walled structures. Modifying DWCNTs would be one of the key technologies for device construction. We demonstrate engineering the geometry of DWCNTs by etching with Ar plasma. The characterization by atomic force rnicroscopy indicates that single atomic carbon layers could be removed from DWCNTs by Ar plasma. The etching effect is further investigated by electrical measurements on DWCNT field-effect transistors, which allow us to study the interwall screen effect as well.  相似文献   
109.
Due to semiconductor nanowire (NW) having a very tiny diameter, the electronic devices based on metal-semiconductor NW-metal (M-S-M) nanostruc- ture can carry a very large current density com- pared to electronics based on bulk semiconductors. A small mass of a NW also means a small heat capacitance. In this case, any small energy trans- fer from the current-carry electrons to local ionic or/and lattice vibrations in NWs may cause a sub- stantial self-heating of the NWs. Thus thermal insta- bility of NWs in M-S-M nanostructure due to Joule heating has become a fundamentally and technolog- ically important issue concerning the performance of semiconductor NW-based nanoelectronics and has at- tracted a lot of attention. The failure behaviors of various semiconductor and metallic NWs inves- tigated by in situ transmission electron microscopy (TEM) and confocal micro-Raman spectroscopy re- spectively have confirmed semiconductor NWs includ- ing Si, Ge, GaN, ZnO, Sn02, Ti02, ZnSe and ZnTe NWs electrically broken by thermal evaporation due to Joule heating and metallic NWs electrically de- stroyed by electromigration. Electron-phonon in- teraction that transfers energy from conduction elec- trons to the ions in the material causes Joule heating. Electromigration due to the transfer of the momentum of conduction electrons to the ions causes migration of atoms in the material when high current density flows through a circuit. The different failure mechanisms of these NWs are significantly materials-dependent due to the difference of their chemical and physical prop- erties and have a very close relation with the param- eters governing the electron transport mechanism at the metal-semiconductor (M-S) nanocontact such as Schottky barrier and bias polarity .  相似文献   
110.
《物理》2014,(8)
<正>中国科学院半导体研究所半导体超晶格国家重点实验室是以半导体物理研究为主的国家重点实验室,在半导体材料生长、器件加工、物理测试和理论研究方面有着非常雄厚的研究基础,20年来为我国在半导体领域的基础研究方面做出了突出的贡献。现计划在半导体自旋电子学、半导体材料与器件物理以及固态量子信息方面招聘人  相似文献   
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