The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices

We review recent work in the field of organic spintronics, focusing on our own contributions to this field. There are two principle magnetoresistance effects that occur in organic devices. (i) Organic magnetoresistance (OMAR), which occurs in nonmagnetic organic semiconductor devices. For example, in devices made from the prototypical small molecule Alq₃ OMAR reaches values of 10% or more at room temperature. (ii) Organic spin‐valve effects that occur in devices that employ ferromagnetic electrodes for spin‐polarized current injection and detection. We undertake an analysis of these two types of magnetoresistance with the goal of identifying the dominant spin‐scattering mechanism. Analysis of OMAR reveals that hyperfine coupling is the dominant spin‐coupling mechanism. Spin–orbit coupling, on the other hand, is important only in organic semiconductor materials containing heavy atoms. We explore the reasons why spin–orbit coupling is relatively unimportant in hydrocarbon materials. Next, we present a theory for spin diffusion in disordered organic semiconductors based on hyperfine coupling, taking into account a combination of incoherent carrier hopping and coherent spin precession in the random hyperfine magnetic fields. We compare our findings with experimental values for the spin‐diffusion length. Finally, we demonstrate a criterion that allows the determination whether the organic spin‐valves operate in the tunneling or injection regimes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic field effects on excited states,charge transport,and electrical polarization in organic semiconductors in spin and orbital regimes

Magnetic field can influence photoluminescence, electroluminescence, photocurrent, injection current, and dielectric constant in organic materials, organic–inorganic hybrids, and nanoparticles at room temperature by re-distributing spin populations, generating emerging phenomena including magneto-photoluminescence, magneto-electroluminescence, magneto-photocurrent, magneto-electrical current, and magneto-dielectrics. These so-called intrinsic magnetic field effects (MFEs) can be observed in linear and non-linear regimes under one-photon and two-photon excitations in both low- and high-orbital materials. On the other hand, spin injection can be realized to influence spin-dependent excited states and electrical conduction via organic/ferromagnetic hybrid interface, leading to extrinsic MFEs. In last decades, MFEs have been serving as a unique experimental tool to reveal spin-dependent processes in excited states, electrical transport, and polarization in light-emitting diodes, solar cells, memories, field-effect transistors, and lasing devices. Very recently, they provide critical understanding on the operating mechanisms in advanced organic optoelectronic materials such as thermally activated delayed fluorescence light-emitting materials, non-fullerene photovoltaic bulk-heterojunctions, and organic–inorganic hybrid perovskites. While MFEs were initially realized by operating spin states in organic semiconducting materials with delocalized π electrons under negligible orbital momentum, recent studies indicate that MFEs can also be achieved under strong orbital momentum and Rashba effect in light emission, photovoltaics, and dielectric polarization. The transition of MFEs from the spin regime to the orbital regime creates new opportunities to versatilely control light-emitting, photovoltaic, lasing, and dielectric properties by using long-range Coulomb and short-range spin–spin interactions between orbitals. This article reviews recent progress on MFEs with the focus on elucidating fundamental mechanisms to control optical, electrical, optoelectronic, and polarization behaviors via spin-dependent excited states, electrical transport, and dielectric polarization. In this article both representative experimental results and mainstream theoretical models are presented to understand MFEs in the spin and orbital regimes for organic materials, nanoparticles, and organic–inorganic hybrids under linear and non-linear excitation regimes with emphasis on underlying spin-dependent processes.     

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that oftraditional inorganic semiconductor. Based on three-current model,considering electrical field effect, we present a theoretical model todiscuss spin-polarized injection from ferromagnetic electrode into organicsemiconductor by analyzing electrochemical potential both in ferromagneticelectrode and organic semiconductors. The calculated result of this modelshows effects of electrode's spin polarization, equilibrium value ofpolarons ratio, interfacial conductance, bulk conductivity of materials andelectrical field. It is found that we could get decent spin polarizationwith common ferromagnetic electrode by increasing equilibrium value ofpolarons ratio. We also find that large and matched bulk conductivity oforganic semiconductor and electrode, small spin-dependent interfacialconductance, and enough large electrical field are critical factors forincreasing spin polarization.     

有机自旋器件磁性渗透层中双极化子对自旋极化输运的影响

根据实验发现的有机器件如Co/有机半导体/La_0.7Sr_0.3MnO₃中磁性原子渗透现象, 利用自旋漂移-扩散方程, 理论研究了磁性渗透层中极化子-双极化子的转化对自旋极化输运的影响. 研究发现: 磁性渗透层具有不同于纯净有机层的迁移率和自旋反转时间, 都将影响极化子-双极化子的转化, 进而影响自旋极化的输运; 在磁性渗透层中极化子自旋反转时间的劈裂是引起自旋弛豫的主要因素, 而极化子和双极化子之间的转化是重要因素.     

铁磁/有机半导体/铁磁系统的电流自旋极化性质研究

根据有机半导体中的电流自旋极化注入和输运实验现象，理论上研究了铁磁/有机半导体/铁磁系统的电流自旋极化性质.考虑到有机半导体的具体特性，从自旋扩散理论和欧姆定律出发，得到了系统的电流自旋极化率.假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.通过计算发现，极化子为实现有机半导体中电流极化注入和输运的有效自旋载流子，即使它只占总载流子很少一部分.还进一步研究了自旋相关界面电阻和电导率匹配以及有机半导体长度等因素对系统电流自旋极化的影响. 关键词： 自旋电子学 自旋注入 有机半导体 极化子     

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results.     

Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures

Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in the optical and spin polarization of the QDs is observed with increasing magnetic field in the range 0-2?T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by the hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields, when these spin depolarization processes are quenched, the electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits a rather strong field dependence under non-resonant excitation. In contrast, such a field dependence is practically absent in more 'isotropic' QD structures (e.g.?single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e.?wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.     

The basis of organic spintronics：Fabrication of organic spin valves

Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve (OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La_0.67Sr_0.33MnO₃ (LSMO)/Alq₃/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.     

Effect of proportion on rectification in organic co-oligomer spin rectifiers

The rectification behaviours in organic magnetic/nonmagnetic co-oligomer spin rectifiers are investigated theoretically.It is found that both the charge current and the spin current through the device are rectified at the same time.By adjusting the proportion between the magnetic and nonmagnetic components,the threshold voltage and the rectification ratio of the rectifier are modulated.A large rectification ratio is obtained when the two components are equal in length.The intrinsic mechanism is analysed in terms of the asymmetric localization of molecular orbitals under biases.The effect of molecular length on the rectification is also discussed.These results will be helpful in the future design of organic spin diodes.     

自旋注入有机物的扩散理论

根据自旋注入半导体的相关理论， 考虑到有机体内可能同时含有带自旋的单极化子和不带自旋的双极化子两种载流子，从扩散 理论和欧姆定律出发，建立了自旋注入有机体的唯象模型.通过计算发现，适当选择铁磁层极化率或两层的电导率可以使得有机层内电流具有高的自旋极化.进一步研究了单极化子浓度等因素对注入电流极化的影响. 关键词： 自旋电子学 自旋注入 有机聚合物 极化子     

基于Alq3的有机发光二极管的磁电导效应

制备了结构为 ITO/CuPc/NPB/Alq₃/LiF/Al 的有机发光二极管,并在300,260,220和180 K 四个温度测量了器件在恒压偏置下注入电流的磁场效应(磁电导效应).在注入电流从双极电流过渡到单极电流的过程中,随电流减小,器件的磁电导呈现先上升后下降的变化趋势.当温度降低,磁电导的值下降.但在任何测量条件下,器件的磁电导始终为正,没有出现如文献报道的磁电导从正到负的变化.实验结果表明,有机发光二极管中正负磁电导现象的产生,并非仅取决于注入电流是单极电流还是双极电流,它还与有机材料、器件结构等密切相关.利用受磁场调控的“电子-空穴对”机理与“双极化子”模型,分别解释了器件双极电流和单极电流的正磁电导效应. 关键词： 有机发光二极管 磁电导 双极化子     

Effects of electric field and magnetic induction on spin injection into organic semiconductors

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed.     

极化子比率变化对自旋注入有机半导体性质的影响

从自旋扩散方程和欧姆定律出发研究了铁磁层到有机半导体的自旋注入,得到了系统的电流自旋极化率。有机半导体中的载流子为自旋极化子和不带自旋的双极化子,极化子比率在有机半导体内随输运距离变化。通过计算发现匹配的铁磁和有机半导体电导率有利于自旋注入;通过调节界面电阻自旋相关性,电流自旋极化率可获得很大程度提高;极化子比率衰减速率对有机半导体电流自旋极化率具有非常重要的影响。     

肖特基势垒对铁磁/有机半导体结构自旋注入性质的影响

理论研究了铁磁/有机半导体肖特基接触时的电流自旋极化注入,并讨论了电流自旋极化率随界面处肖特基势垒高度、有机半导体层中特殊载流子及其迁移率、界面附近掺杂浓度的变化关系.通过计算发现,寻找在势垒区中载流子迁移率比较大的有机半导体材料对实现有效的自旋注入是必要的;同时还发现,由于铁磁/有机半导体接触而形成的肖特基势垒不利于自旋注入.因此要想实现有效的自旋注入,界面附近必须采用重掺杂来有效减少势垒区的宽度,且势垒的高度要限制在一定的范围内.     

Effect of electric field and magnetic field on spin transport in bilayer graphene armchair nanoribbons: A Monte Carlo simulation study

In this article we study the effect of external magnetic field and electric field on spin transport in bilayer armchair graphene nanoribbons (GNR) by employing semiclassical Monte Carlo approach. We include D'yakonov-Perel' (DP) relaxation due to structural inversion asymmetry (Rashba spin-orbit coupling) and Elliott-Yafet (EY) relaxation to model spin dephasing. In the model we neglect the effect of local magnetic moments due to adatoms and vacancies. We have considered injection polarization along z-direction perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction. To the best of our knowledge there has been no theoretical investigation of the effects of external magnetic field on spin transport in graphene nanoribbons. This theoretical investigation is important in order to identify the factors responsible for experimentally observed spin relaxation length in graphene GNRs.     

Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures

Electrical spin injection from Fe into AlxGa1-xAs quantum well heterostructures is demonstrated in small (<500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.     

自旋极化有机电致发光器件中单线态与三线态激子的形成及调控

由于有机半导体（OSC）材料自旋弛豫时间长、自旋扩散长度大,OSC自旋器件逐渐成为研究热点.对于有机电致发光器件（OLED）,通过自旋极化电极调控单线态和三线态激子比率是提高其效率的有效方法.本文从漂移扩散方程和载流子浓度连续性方程出发,结合朗之万定律建立了一个自旋注入、输运、复合的理论模型.计算了OSC中的极化电子、空穴浓度,得出了单线态和三线态激子的比率.分析了电场强度、自旋相关界面电导、电极和OSC电导率匹配和电极极化率等因素的影响.计算结果表明：两电极注入反向极化的载流子并提高载流子自旋极化率,有     

Study on the competition between density waves, singlet, and triplet pairing superconductivity in organic conductors (TMTSF)2X

We study the effect of dimerization of TMTSF molecules and the effect of magnetic field (Zeeman splitting) on the phase competition in quasi one-dimensional organic superconductors (TMTSF)₂X by applying the random phase approximation method. As for the dimerization effect, we conclude that due to the decrease of the dimerization, which corresponds to applying the pressure and cooling, spin and charge density wave states are suppressed and give way to a superconducting state. As for the magnetic field effect, we find generally that spin-triplet pairing mediated by a coexistence of 2k_F spin and 2k_F charge fluctuations can be strongly enhanced by applying magnetic field rather than triplet pairing due to a ferromagnetic spin fluctuations. Applying the above idea to (TMTSF)₂X compounds, a magnetic field induced singlet-triplet transition is consistent with above mechanism in (TMTSF)₂ClO₄.     

Spin resonance associated with itinerant electrons affected by the injected spin current

The effect of spin injection on the spin resonance associated with itinerant electrons in a nonmagnetic semi-conductor has been studied within the phenomenological approach. The power absorbed under the resonance conditions has been analyzed as a function of the frequency, effective g-factor, and magnetic field direction. It is shown that the power absorbed by the spin-polarized charge carriers under the resonance conditions can provide a tool for studying the spin injection.