GaxPy(x+y=8)及其阴离子团簇的结构与性质的DFT研究

用密度泛函理论方法对半导体二元微团簇GaxPy和GaxPy−(x+y=8)的几何结构、电子态、能量等进行了计算, 在B3LYP/6-311+G(2df)水平下完成结构优化和频率分析. 讨论了电荷诱导结构发生变化情况, 与中性团簇相比, 在阴离子团簇中, Ga—P键较P—P键有利于形成. 预测了未知Ga1P7−、Ga2P6−、Ga3P5−、Ga6P2−和Ga7P1−化合物的最稳定结构存在的可能性, 得出在GaxPy和GaxPy−(x+y=8)中, Ga4P4和Ga4P4−比较稳定. 给出了两种能差即绝热电子亲合势(ΔEAEA)和垂直电离能(ΔEVDE), 并与相关文献作比较. Ga4P4和Ga5P3的绝热电子亲合势与实验值相当吻合. 布居分析表明, 磷化镓团簇的成键属于混合键型.     

苯并噻唑衍生物的气相HeI紫外光电子能谱(UPS)及量子化学研究

对苯并噻唑系列衍生物的气相HeI紫外光电子能谱(UPS)进行了研究．首次报道 了五种化合物的紫外光电子能谱，利用Gaussian94从头算的量子化学计算方法对其 进行了计算，并结合计算结果对各个分子体系的谱图进行了指认．研究结果表明： 分子的电离能受取代基性质的影响，取代基的给电子能力越大，体系的共轭效应越 强，电离能就越低．对苯并噻唑衍生物而言，6-位取代基对电离能的影响大于2-位 取代基的影响．     

NH0-1+2-3离解能等的高级ab initio计算与评价

A recent experimental determination[1] of the dissociation energies (D0) for H2N-H, H2N+-H and H2N-H+, the ionization energies for NH3 and NH2 resulted in large deviations when compared with those of the earlier values and the QCISD(T)/6-311+G(3df,2p) ab initio calculations. We have performed some higher level ab initio calculations on these data by utilizing the Gaussian 92/DFT and Gaussian 94 pakages of programs and have assessed the available experimental values. Our calculations were carried out at the QCISD (TQ)/aug-cc-pVDZ, G2(QCI), QCISD(T)/6-311 ++G(3df,3pd) and QCISD(T)/aug-cc-pVTZ levels of theory. Geometries were optimized at both of the MP2(full)/6-31G(d) and the MP2(full)/6-31(d,p) levels, and were compared with those of the experiments if available. The MP2(full)/6-31G(d,p) tight-optimized geometries for the neutrals are closer to those of the experiments than those of the MP2 (full)/6-31G(d), and are in excellent agreement with the experimental results as shown in Table 1. In this case, we assumed that the optimized geometries for the cations would be better if p polarization functions are added to the hydrogen atoms. We firstly noted that the symmetry of the NH3+ cation was D3h, other than Cs. as reported in ref.[1]. All of the zero-point energies and the final geometries are calculated at the MP2(full)/6-31G(d,p) level of theory. We have also repeated the QCISD(T )/6-311 + G(3df,2p) calculations of ref. [1], because we could not identify their level of goemetry optimization. It is found that the total energy, -55.244 19 Hartrees, for NH2+(1A1 ) in ref.[1] might be in error. Our result is -55.336 29 Hartrees at the same level of theory. At our highest level [QCISD(T)/aug-cc-pVTZ] of calculations as shown in Table 3, the D0 (temperature at zero Kelvin) values of H2N-H, H2N+-H(3B1for NH2+ ) and H2N- H+ are 4.51, 5.49 and 8.00 eV, respectively. These data reported in re f.[1] were 4.97, 5.59 and 8.41 eV, respectively. Our result on D0(H2N-H) supports the work of ref.[2,3,5,6]. The ionization energies (IE) for NH3 and NH2 (3B1 for NH2+) at our highest level are 10.11 and 11.09 eV while in ref.[1] were 10.16 and 10.78 eV, respectively. For the latter, our result supports the experiment of ref.[3]. Our predicted D0 for HN2+-H and IE for NH2 (1A1 for each NH2+) are 6.80 and 12.39 eV, respectively. These values differ greatly from the predicted values (9.29 and 14.88 eV) of ref.[1] where the total energy of NH2+(1A1) might be in error. The D0 value for HN-H has not been found in ref.[1]. Our result supports the work of ref.[3]. We have also derived all of these values at the temperature of 298K and under the pressure of 101kPa at several levels of thoery as shown in Table 3. On examining the experiment of ref.[1] in detail, it is easy to find that all of the larger deviations might be from a too high value of the appearance potential of proton AP(H+). Indeed, ref.[1] has mentioned that the determintion of AP(H+), due to kinetic shift, would lead to a hihger value for the dissociation energy as has been pointed out by Berkowitz and Ruscic. In this work, we concluded that, besides some mistakes in the theoretical calculations of ref.[1], the dissociation energies for H2N-H and H2N-H+,the IE for NH2 (3B1 for NH2+) might also be unreliable and need to be re-examined.
     

饱和链状分子中C 1s电子电离能与基团拓扑电负性指数

由X-射线光电子谱测定的原子内层电子的电离能(也称结合能)能反映分子内部不同区域的原子特性,常用于估计分子内不同部位的化学活性、分子中的电子结构变化以及取代基效应[1]。还用于研究价电子性质[2-4]和化合物的气相酸碱性[5]。目前,对原子内层电子电离能的研究有实验测定和     

ICl3电离能的实验和理论研究

结合紫外光电子能谱实验和量子化学计算方法研究了三氯化碘的电离能．实验得到的ICl3的紫外光电子能谱是一氯化碘和氯气的混合能谱，这表明ICl3分解为ICl和Cl2．采用B3LYlP方法在6-311 G(df)基组水平上得到了ICl3分解的过渡态．计算表明ICl3分解吸收少量热量，反应的活化能为168．4kJ／mol．采用HF方法和外壳层格林函数方法(OVGF)预测了ICl3不同轨道的电离能，OVGF方法得到的ICl3第一垂直电离能为10．372eV．     

丁酮分子内价轨道1a"的电子动量谱学研究

用高分辨率电子动量谱仪进行丁酮分子的结合能谱和内价轨道1a"电子动量谱的实验工作,以及用HartreeFock和密度泛函理论方法对1a"轨道电子动量谱的理论研究.得到了各价轨道的电离能值以及理论计算的总能、偶极矩和1a"轨道的二维密度图.并比较了内价轨道1a"的电子动量谱的实验和理论计算结果,实验结果与理论计算符合较好.     

电离度与类H离子电离能关系的研究

研究了类Ｈ离子电离能与电离度ΔＺ（离子电荷数）之间的关系,给出了类Ｈ离子各电离态电离能的计算公式,并对所有类Ｈ离子的电离能进行了计算。与实验结果或相对论多组态ＤｉｒａｃＦｏｃｋ方法的结果比较,得到了较满意的结果。     

环戊烷分子的电子动量谱

报导了在高分辨率电子动量谱仪上获得的环戊烷分子的结合能谱和动量谱的实验结果,并用Hartree-Fock方法和密度泛函方法做了理论计算.实验得到的环戊烷分子各电子轨道的电离能值与光电子谱得到的数据一致,动量分布的实验结果也与理论计算基本吻合.     

CCD质子辐照损伤效应的三维蒙特卡罗模拟

针对空间质子诱发CCD性能退化问题,开展了CCD质子辐照效应的三维蒙特卡罗模拟研究。采用三维蒙特卡罗软件Geant4模拟计算了不同能量质子在Si和SiO₂中的射程及Bragg峰,分析了不同能量质子在材料中能量沉积的过程,并将模拟结果与相关数据进行对比,模拟误差在5%以内。根据质子与材料相互作用的物理过程,选取了合适的Lindhard分离函数,添加合适的物理过程,模拟计算了不同能量质子在SiO₂中的电离能量损失和Si中的非电离能量损失,并将结果与国外相关数据进行对比。根据CCD的生产工艺参数,建立了单个像元的三维模拟模型,确定了质子辐照损伤的灵敏体积,模拟计算了不同能量质子在像元灵敏体积内的电离能量沉积与非电离能量沉积,分析了CCD不同能量质子的辐照损伤差异产生的机理。结合粒子输运计算结果与CCD质子辐照实验结果,分析了质子辐照诱发CCD辐射敏感参数退化的物理机制。     

氟里昂134a的真空紫外光电离和光解离的同步辐射研究

利用同步辐射真空紫外光研究了氟里昂134a(CH₂FCF₃)的光电离和光解离过程,通过测量各离子的光电离效率曲线,得到了该分子的电离能(12.68±0.04)eV和所有碎片离子的出现势,运用Gaussian-03计算了母体和中性碎片及相应离子的电子态、对称性和能量.结合理论计算结果对离子出现势的理论值和实验值进行了比较,分析了母体离子可能的光解离通道.