PW11M(M=Cu、Co)@TiO2多相催化剂的制备及氧化脱硫性能

摘要：以过渡金属(Cu, Co)取代磷钨酸为模板剂,硫酸钛为钛源,通过一步模板法合成出一类多酸基PW11M(M=Cu、Co)@TiO2材料,采用FT-IR、XRD、XPS、Raman、SEM和TEM表征手段对材料进行了结构表征. 结果表明,PW11M(M=Cu、Co)被引入到TiO2中,形成了球形核壳结构. N2吸附-脱附测试表明,PW11Co@TiO2具有介孔结构:孔径大小为3.3 nm,比表面积为72.4 m2/g. 在以H2O2为氧化剂,乙腈为溶剂的氧化脱硫反应体系中考察了其催化活性,结果表明：复合材料PW11M(M=Cu、Co)@TiO2表现出良好的催化性能. 其中催化剂PW11Co@TiO2在投入量为40 mg,反应底物为500 ppm,反应温度60 oC,反应40 min后,DBT的脱硫率达到99.7%. 中断和循环实验表明,催化剂PW11Co@TiO2具有良好的稳定性,在相同的反应条件下,循环反应5次后,催化剂的催化活性没有明显下降.     

数字全息成像系统的景深和焦深分析

根据全息理论,分析了数字全息成像系统的景深和焦深.针对数字全息不同的记录光路结构,分别给出了焦深的近似表达式.结果表明：数字全息系统的景深和焦深不仅与记录波长以及记录时的数值孔径有关,还与记录时参考光波的偏置情况有关;在记录距离和CCD参量一定的条件下,离轴无透镜傅里叶变换全息对称偏置下的焦深比非对称偏置下的稍小;显微成像情况下离轴无透镜傅里叶变换全息系统的焦深大于同轴菲涅耳数字全息系统的焦深,计算机模拟表明了结果的正确性.     

一种非本征光纤法布里-珀罗传感器的信号解调算法

给出了一种基于均方误差估计的非本征光纤法布里-珀罗(EFPI)传感器的腔长解调算法。在参量估计方面, 均方误差将估计子的方差和偏差结合在一起, 具有更高的估计精度和准确度。如果给出某一个真值的一系列估计子, 则具有最小均方误差的估计子比其他估计子更为有效。在非本征光纤法-珀传感器的腔长解调方面, 则实际腔长对应于腔长均方误差估计取最小值时的腔长估计子。对一个非本征光纤法-珀压力传感器的测试结果表明, 腔长解调分辨率为0.18 nm, 对应的压力分辨率可达2.99 kPa。与传统的解调算法相比, 通过该算法可在较宽的动态范围内获得高的解调分辨率, 并实现绝对腔长的解调。     

ECR氧离子源及整体分离环RFQ加速器低能输运系统的研制

根据研制分离作用RFQ和升级改造1MeV ISR RFQ的需要,设计了一台ECR O⁺离子源及低能输运(LEBT)系统. 低能输运系统使用2个静电透镜聚焦束流, 在引出电压22kV时, LEBT末端得到6mA以上总脉冲束流、束流归一化均方根发射度为0.12πmm﹒mrad. 束腰可前后移动160mm.     

Remote Generation of Entanglement for Individual Atoms via Optical Fibres

The generation of atomic entanglement is discussed in a system that atoms are trapped in separate cavities which are connected via optical fibres. Two distant atoms can be projected to Bell-state by synchronized turning off of the local laser fields and then performing a single quantum measurement by a distant controller. The distinct advantage of this scheme is that it works in a regime where Δ≈κ〉〉g, which makes the scheme insensitive to cavity strong leakage. Moreover, the fidelity is not affected by atomic spontaneous emission.     

Robust Implementation of a Nonlocal N-Qubit Phase Gate by Interference of Polarized Photons

We propose a protocol to directly implement the nonlocal phase gate of N A-type three-level atoms trapped in distant cavities by using interference of polarized photons. The protocol uses the effects of quantum statistics of indistinguishable photons emitted by the atoms inside optical cavities.     

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

A three-dimensional finite element models for phase change random access memory （PCRAM） is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure （CS） and the ring-type contact in bottom electrode （RIB） are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in CST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current.     

Temperature Controlled Filamentation in Argon Gas

Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas.     

MgB2超导薄膜制备方法对比研究

文章结合MgB2超导薄膜在电子器件中的应用,简介了混合物理化学气相沉积法、脉冲激光沉积法、磁控溅射法、分子束外延法和电子束蒸发法等MgB2超导薄膜制备方法和研究进展,并对主要的MgB2超导薄膜制备方法进行了比较,提出了改进意见.对MgB2超导薄膜的应用前景作了展望.     

La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算

采用化学气相沉积法和气相掺杂法, 分别制备了La 或N掺杂的SiC 纳米线. 利用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)、高分辨透射电子显微镜(HRTEM)、X射线能量色散谱(EDS)分析和X射线衍射(XRD)等测试手段对两种产物的微观形貌、元素组成和物相结构进行了系统表征. 以合成产物作为阴极, 对其场发射性能进行测试, 结果表明: SiC 纳米线的开启电场值和阈值电场值由未掺杂的2.3、6.6 V·μm^-1分别降低为1.2、5.2 V·μm^-1(La 掺杂)和0.9、0.4 V·μm^-1(N 掺杂). 采用Material Studio 软件中的Castep 模块建立(3×3×2)晶格结构模型, 对未掺杂、La 或N掺杂SiC 的能带结构和态密度进行计算, 结果显示: La或N掺杂后, 在费米能级附近产生了新的La 5d或N 2p掺杂能级, 导致禁带宽度(带隙)变窄, 使得价带电子更容易跨越禁带进入导带, 从而改善SiC纳米线的场发射性能.