中国化学会、国家自然科学基金委员会关于召开第二届全国微全分析系统学术会议的征文通知(第一轮通知)

中国化学会、国家自然科学基金委员会和上届学术会议决定于 2 0 0 4年 4月 2 2～ 2 4日在杭州市召开“第 2届全国微全分析系统学术会议” ,并委托浙江大学负责筹办。会议将就我国自上届学术会议以来微全分析系统及相关技术的新成就、新进展进行学术交流和讨论 ,热忱欢迎大家踊跃投稿和参加会议。现将有关事项通知如下 :一、征文内容(1)微流体及流控理论 ;(2 )微流控系统 ;(3)微分离系统 ;(4)微阵列芯片 ;(5 )微加工技术 ;(6 )微加工材料 ;(7)微检测系统 ;(8)微全分析系统的试样前处理 ;(9)微全分析系统应用 ;(10 )其他与微流控技术有关的流…     

反复上呼吸道感染患儿发样微量元素锌,铜,铁检测结果分析

采用示波极谱法对１８３名反复上呼吸道感染患儿及１１８名健康体检儿同时进行发样锌，铁，铜测定，结果表明，反复上呼吸道感染儿发锌，铁均低于健康体检儿，有高度显著性差异，铜只在婴儿组反复感儿高于健康体检儿，其它各年龄组反复上感儿低于健康栓检儿或无显著性差异，说明以２儿童进行常规发样微量元素普查，发现低锌，低铁者及时给予补充，可减少感染性疾病的发生率。铜与免疫功能的关系尚待研究。     

6-甲基-4-羟基-喹啉酸盐羟基钒(Ⅴ)(英)

The central V atom in bis[6-methyl-4-hydroxy-3-quinolinecarboxylate] mono(oxo)mono-hydroxy-vanadium(Ⅴ) (1), synthesized by the hydrothermal treatment of ethyl 6-methyl-4-hydroxy-3-quinolinecarboxylate and V₂O₅, has a distorted octahedral coordination geometry formed by six oxygen atoms from two oxygen atom of two hydroxy groups and two oxygen atoms of two carboxylate groups as well as one oxo group and hydroxy group. CCDC: 285592.     

碳化硼纳米线的制备和结构

以碳纳米管为模板，通过加热碳纳米管与硼粉的混合物，获得了笔直的硼碳纳米线.对纳米线的结构和成分进行研究，结果表明纳米线主要为B4C纳米线.在部分B4C纳米线的端部存在Ni颗粒，这些端部具有Ni颗粒的纳米线构成了纳米磁针.讨论了B4C纳米线的生长机制，B4C纳米线的生长主要为硼原子在碳纳米管中扩散并发生化学反应，使得碳纳米管晶格结构发生重组，形成B4C纳米线.反应后，硼原子部分取代了碳纳米管中碳原子，修补了碳纳米管中的晶格缺陷，获得了形态笔直的B4C纳米线.     

红树林湿地土壤矿物的分析

以湛江湾南海堤典型红树林湿地土壤为研究对象,采用X射线衍射(XRD)和傅立叶变换红外光谱(FTIR)快速批量鉴定土壤中矿物成分,利用扫描电子显微镜(SEM)观察土壤颗粒形貌特征并获得化学成分组成信息;同时采集附近光滩土壤样品进行对比研究,以揭示红树林湿地土壤特殊的生态环境特征。结果表明,红树林湿地土壤矿物主要由高岭石、石英、白云母、埃洛石、地开石和蛇纹石等组成;与光滩土壤相比,红树林湿地土壤矿物类型多样,而光滩土壤矿物相对单一,主要为石英和高岭石;红树林湿地土壤颗粒以片状聚合体为主,主要元素组成为C、O、S、Al、Si、Mg、Fe等,常见含有Cu、Zn、Mo等重金属元素。同时发现红树林湿地土壤颗粒含有较丰富的硫化物;而光滩土壤未发现上述特征,表明红树林湿地处于一个特殊的生态环境,土壤沉积物中富含有机质、Fe、S等,比一般潮滩更易于富集硫化物或重金属。     

InGaN/GaN多量子阱LED载流子泄漏与温度关系研究

通过测量光电流,直接观察了InGaN/GaN量子阱中载流子的泄漏程度随温度升高的变化关系。当LED温度从300K升高到360K时,在相同的光照强度下,LED的光电流增大,说明在温度上升之后,载流子从量子阱中逃逸的数目更多,即载流子泄漏比例增大。同时,光电流的增大在激发密度较低的时候更为明显,而且光电流随温度的增加幅度与激发光子的能量有关。用量子阱-量子点复合模型能很好地解释所观察到的实验现象。实验结果直接证明,随着温度的升高,InGaN/GaN量子阱中的载流子泄漏将显著增加,而且在低激发密度下这一效应更为明显。温度升高导致的载流子泄漏增多是InGaN多量子阱LED发光效率随温度升高而降低的重要原因。     

Contactless Microwave Detection of Shubnikov–De Haas Oscillations in Three-Dimensional Dirac Semimetal ZrTe_5

We report Shubnikov–de Haas(SdH)oscillations of a three-dimensional(3D) Dirac semimetal candidate of layered material ZrTe_5 single crystals through contactless electron spin resonance(ESR)measurements with the magnetic field up to 1.4 T.The ESR signals manifest remarkably anisotropic characteristics with respect to the direction of the magnetic field,indicating an anisotropic Fermi surface in ZrTe_5.Further experiments demonstrate that the ZrTe_5 single crystals have the signature of massless Dirac fermions with nontrivialBerry phase,key evidence for 3D Dirac/Weyl fermions.Moreover,the onset of quantum oscillation of our ZrTe_5 crystals revealed by the ESR can be derived down to 0.2 T,much smaller than the onset of SdH oscillation determined by conventional magnetoresistance measurements.Therefore,ESR measurement is a powerful tool to study the topologically nontrivial electronic structure in Dirac/Weyl semimetals and other topological materials with low bulk carrier density.     

Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection

Recently,the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors.Thus,the modeling and characterizing of the mem-elements become essential.In this paper,the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied.Firstly,two fractional-order memcapacitors are connected in parallel,the equivalent model is derived,and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection.Then a new understanding manner according to different rate factor K and fractional orderαis derived to explain the equivalent modeling structure conveniently.Additionally,the negative order appears,which is a consequence of the combination of memcapacitors in different directions.Meanwhile,the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor.Thus,an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.