合肥光源横向束流反馈系统中矢量运算单元和光纤陷波滤波器的研制

 合肥光源横向束流反馈系统已经建成,着重介绍了系统中矢量运算单元和光纤陷波滤波器的研制。矢量运算单元中使用混频器控制信号的衰减,调节控制电压的大小以控制反馈信号的相位;光纤陷波滤波器创新性地提出用光纤延时制作陷波滤波器,很好地滤除了信号中的回旋频率分量,节省了反馈功率。     

基于Hilbert变换的相空间重建方法在HLS逐束团测量系统中的应用

引入基于Hilbert变换的相空间重建手段, 对合肥光源(HLS)逐束团测量系统采集的数据进行了全面的分析, 其中包括单个束流位置监测器(BPM)数据的相空间重建, 逐圈逐束团振荡相位信息、束团振荡模式信息、逐束团横向工作点(tune值)变换. 提出了新的分析束团tune值的手段, 提供传统方法无可比拟的更高的时间和频率分辨率. 还对不同模式的阻尼率进行了计算, 这为衡量逐束团反馈系统的效果提供了确实可靠的方法.     

Performance of optical amplifier employing silica host magnesium-aluminum-germanium co-doped erbium-doped fiber

Two silica host magnesium(Mg)-aluminum(Al)-germanium(Ge) co-doped erbium-doped fibers (EDFs) have been fabricated, which have different Mg concentrations. The concentration of all the compositions in the preform is measured through electronics probe micro analysis (EPMA). The maximum Mg concentrations of fibers A and B are 3.98 and 1.28 mol%, respectively. The performance characteristics including absorption spectrum and gain are measured and analyzed. The absorption coefficients of fibers A and B are 13.3 and 14.3 dB/m respectively at wavelength of 1532 nm. The max gains of these two erbium-doped fiber amplifiers (EDFAs) are 30.1 and 35.9 dB with input signal power of -30 dBm and pump power of 100 mW at 980 nm. Fiber B with maximum Mg concentration 1.28 mol% has better performance than fiber A. Fiber B has high absorption coefficient and high gain characteristics. The optimum fiber B length of C-band EDFA is 7 m and that of L-Band EDFA is about 30 m, which is much shorter than standard commercial EDFAs.     

铋镓共掺的高浓度掺铒石英基光纤中铒离子团簇率的实验研究

使用MCVD法结合溶液掺杂技术制作了铒铋镓共掺的石英基光纤.根据光纤吸收谱，得出其中铒离子浓度是5.24×10²⁵/m³.然后提出了一种新的利用透射率测定掺铒光纤的团簇率的实验方法，该方法相比于以前的方法更简单有效.利用该方法，测得了自制铒铋镓共掺光纤中团簇率.通过与前人的结果相比较，充分说明铋和镓的掺入大大提高了铒离子在石英基光纤中的溶解度，抑制了铒离子形成团簇.     

利用真空变温电阻测试仪研究VO_2薄膜的电阻特性

利用磁控溅射技术在普通玻璃基片上制备了VO2薄膜,晶体结构和表面形貌分析表明制备的样品主要具有VO2相,结晶情况良好.利用自制真空变温薄膜电阻测试仪器测试了VO2薄膜的电阻率随温度变化曲线,观察到钒氧化物的电阻突变和热滞现象.     

石英基掺Yb3+光纤中Al3+共掺特性的研究

基于实验测试结果分析了用于大功率光纤激光器的石英基包层抽运掺Yb3+光纤中Al3+共掺的特性.揭示出在高掺Yb3+的石英基光纤中,共掺Al3+的摩尔浓度为Yb3+摩尔浓度的9-11倍时既可以减小Yb3+的浓度猝灭概率,又可以获得高吸收系数,同时还可更好地满足数值孔径的要求的结论.在此基础上利用MCVD设备并结合湿法掺杂工艺制作出多根石英基掺Yb3+光纤预制棒,对拉丝后光纤的相关参数测试表明,通过精确控制疏松层的沉积温度,掺Yb3+光纤在976 nm波长的吸收系数可高达620 dB/m,且重复性好.这一结论为共掺Al3+的掺Yb3+光纤制作提供了良好的借鉴作用.     

基于偏振保持掺Er3+光纤的高稳定性单波长光纤激光器

研制出光敏偏振保持掺Er³⁺光纤,通过在这种光纤上紫外写入三个光纤光栅,形成对抽运激光高转化效率的谐振腔.在输出功率为23.617dBm、工作波长为976nm的激光抽运下,得到均值功率为9.20dBm、均值中心波长为1554.554nm的单波长激光输出.在室温下800min（约13.3h）的测量时间内,其输出功率的波动为±0.05dB,中心工作波长的波动为±0.0015nm. 关键词： 光纤激光器 3+光纤')" href="#">偏振保持掺Er³⁺光纤 光纤Bragg光栅     

基于高双折射Sagnac环的可调环形腔掺铒光纤激光器理论与实验研究

报道了一种利用偏振控制器（PC）和保偏光纤（PMF）组成的高双折射Sagnac干涉环实现选频和调谐的环形腔掺铒光纤激光器.理论模拟了PMF和PC对波长的控制作用.实验中调节PC得到了单波长、双波长和多波长激光;并验证了滤波间隔随PMF长度的变化规律.实验中得到了斜率效率20%,3 dB线宽0.016 nm,30 dB线宽0.097 nm,边模抑制比（SMSR）40 dB左右的稳定激光输出. 关键词： 光纤激光器 Sagnac干涉环 环形腔 掺铒光纤     

High power red-light GalnP/AlGalnP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580℃. When the blue shift was 24.7 meV at 480℃, the COD power for the window LD was 86.7% higher than the conventional LD.     

Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80roW without kinks, and the maximum output power was 184roW at 22~C. The threshold current was 40 mA.