垂直电子耦合InGaAs量子吉的光学特性

报导了ＩｎＧａＡｓ／ＧａＡｓ和ＩｎＧａＡｓ／ＡｌＧａＡｓ垂直耦合量子结在注入式激光器的制备工艺及其光致荧光谱，量热吸收谱和电致荧光谱的特性，该激光器的连续波波发光功率在室温下可达１Ｗ。     

SBA-15介孔分子筛担载的钒基氧化物催化剂对乙烷选择氧化性能

用等体积浸渍法制备了SBA-15担载的钒基(V/SBA-15)和钾修饰的钒基氧化物(K-V/SBA-15)催化剂, 使用氮气吸附、小角X射线衍射(XRD)、紫外-可见漫反射光谱(UV-Vis DRS)和紫外激光拉曼光谱对这些催化剂的结构进行表征, 并评价了这些催化剂对乙烷选择氧化的活性与选择性. 实验结果表明介孔结构SBA-15对乙烷选择氧化的活性优于常规的SiO2; 对于SBA-15担载的V/SBA-15和K-V/SBA-15催化剂, 极低钒担载量(nV:nSi≤0.1:100)时隔离的四配位钒氧化物是乙烷选择氧化生成醛类化合物的活性物种, 高钒担载量(nV:nSi≥2.5:100)时聚合的和微晶态的钒氧化物是乙烷氧化脱氢或深度氧化的活性物种.     

Effects of Calcination Temperature on the Acidity and Catalytic Performances of HZSM-5 Zeolite Catalysts for the Catalytic Cracking of n-Butane

The acidic modulations of a series of HZSM-5 catalysts were successfully made by calcination at different treatment temperatures, i.e. 500, 600, 650, 700 and 800 ℃, respectively. The results indicated that the total acid amounts, their density and the amount of B-type acid of HZSM-5 catalysts rapidly decreased, while the amounts of L-type acid had almost no change and thus the ratio of L/B was obviously enhanced with the increase of calcination temperature (excluding 800 ℃). The catalytic performances of modified HZSM-5 catalysts for the cracking of n-butane were also investigated. The main properties of these catalysts were characterized by means of XRD, N2 adsorption at low temperature, NH3-TPD, FTIR of pyridine adsorption and BET surface area measurements. The results showed that HZSM-5 zeolite pretreated at 800 ℃ had very low catalytic activity for n-butane cracking. In the calcination temperature range of 500-700 ℃, the total selectivity to olefins, propylene and butene were increased with the increase of calcination temperature, while, the selectivity for arene decreased with the calcination temperature.The HZSM-5 zeolite calcined at 700 ℃ produced light olefins with high yield, at the reaction temperature of 650 ℃ the yields of total olefins and ethylene were 52.8% and 29.4%, respectively. Besides, the more important role is that high calcination temperature treatment improved the duration stability of HZSM-5zeolites. The effect of calcination temperature on the physico-chemical properties and catalytic performance of HZSM-5 for cracking of n-butane was explored. It was found that the calcination temperature had large effects on the surface area, crystallinity and acid properties of HZSM-5 catalyst, which further affected the catalytic performance for n-butane cracking.     

甲烷氧化偶联Ti-La-Li系混合氧化物催化剂

研究了Ti-La-Li三元氧化物的组成、结构及其对甲烷氧化偶联反应的催化性能；用XRD、IR、XPS和SEM等方法对催化剂进行表征，结果表明：在LiTi_xLa_(1-x)O_2系列催化剂中，随x值的不同，可生成LaTi_(1－y)Li_yO_(3-λ)、Li_2TiO_3、La_(0.66)TiO_(2.993)、La_2O_3和Li_(1.33)Ti_(1.66)O_4几种物相，其中，钙钛矿到三元复合氧化物LaTi_(1-y)Li_yO_(3-λ)是甲烷氧化偶联反应的主要活性相，活性位Li~＋-O~－-Ti~(3＋)的形成是活性提高的主要原因．Li_2TiO_3和La_(0.66)TiO_(2.993)是深度氧化活性相，而Li_(1.33)Ti_(1.66)O_4既无偶联活性，也无深度氧化活性．     

超导体Y-Ba-Cu-O复合氧化物催化苯酚羟化反应的研究

利用HZOZ和苹酚联产对苯二醋和邻苯二酚是目前二酚生产领域中比较活跃的课题．长久以来，人们曾利用酸、金属盐、金属配合物等作为催化剂，在均相体系中来研究其对苯酸羟化反应的催化活性．由平均相反应存在着明显的缺点，后来又转向了多相催化剂的开发，先后出现了TSull］TS42     

CuO／活性炭和Fe2O3／活性炭催化还原NO

ＣｕＯ／活性炭和Ｆｅ_２Ｏ_３／活性炭催化还原ＮＯ高志明，赵震，杨向光，吴越（中国科学院长春应用化学研究所长春１３００２２）关键词活性炭，还原，ＮＯ，氧化铜，氧化铁目前，对固定源的ＮＯ处理是采用Ｖ２Ｏ５／ＴｉＯ２作催化剂，ＮＨ３作还原剂的选择催化还原方...     

VmTi和KnV0.04Ti担载氧化物催化剂的表征与催化燃烧柴油炭黑的性能

用FTIR和UV-Vis研究了2个系列不同V和K负载量的VOx/TiO2和K-VOx/TiO2催化剂结构的变化;并使用程序升温氧化反应技术对这两种催化剂催化柴油炭黑燃烧活性进行了考察.结果表明,当VOx/TiO2催化剂中n(V)∶n(Ti)=0.04时,催化剂活性最好(tm=389℃).添加K能显著改善VOx/TiO2催化剂活性,n(K)∶n(V)∶n(Ti)=0.04∶0.04∶1时,炭黑燃烧的反应温度最低(tm=343℃).FTIR和UV-Vis结果表明,当VOx/TiO2催化剂n(V)∶n(Ti)>0.04∶1时,催化剂表面有V2O5形成,由于V2O5氧化能力较弱,因而催化剂的活性反而降低.而当K-VOx/TiO2催化剂中n(K)∶n(V)达到1∶1时,由于形成的KVO3物种与TiO2载体有很好的协同作用,所以催化剂活性最好.     

后退火对InxGa1xAs 单层量子点光学性质的影响

 研究了以GaAs和Al_0.15Ga_0.85As为基体, 当铟的摩尔分数（x）不同时, 后退火对InxGa1-xAs 单层量子点光致荧光（PL）谱特性的影响。后退火将导致铟含量不同的样品（x=0.23, 0.37, 0.50, 1.0）的PL谱线宽度变窄和蓝移。对于GaAs 基体, 在700℃退火90分钟所造成的PL谱蓝移与退火30分钟相似;(仅当x=0.23时, 退火90分钟所造成的PL谱蓝移小于30分钟)。对于Al0.15Ga0.85As基体, 在700℃退 火30分钟和90分钟, 其PL谱蓝移是不同的。     

退火及铟含量对InGaAs量子点光学特性的影响

 研究了退火条件和In组份对分子束外延生长的InGaAs量子点（分别 以GaAs或AlG aAs为基体）光学特性的影响。表明：量子点中In含量的增加将导致载流子的定域能增加和基态与激发态之间的能量间隔增大。采用垂直耦合的量子点及宽能带的AlGaAs基体可增 强材料的热稳定性。以AlGaAs为基体的InGaAs量子点,高温后退火工艺 (T= 830℃)可改善低温生长的AlGaAs层的质量,从而改善量子点激光器材料的质量。