Li掺杂熔融织构YBCO晶体的面内磁阻

在0～9T范围内测量了磁场平行于c-轴时Li掺杂熔融织构YBCO样品面内电阻的温度关系.我们用A～H模型拟合实验数据.结果表明,以R/Rn=20%作为高阻区和低阻区的分界线,R～T曲线可分别用R=Rn{I0[CH-p(1-t)q]}-2来描述,其中Rn是正常态的电阻Rn=-5.36 0.145T.p=0.78,1.88 和q=1.5, 3.5分别是高阻区和低阻区的拟合参数.     

熔融织构YBa2Cu2.99Li0.01Oy的交流磁化性质

在不同直流磁场、交流磁场和频率下测量了熔融织构YBa2Cu2.99Li0.01Oy样品交流磁化率的温度关系.基于非线性磁通耗散理论,研究了交流场的大小和频率对χ″的峰值温度Tp的影响,获得了磁通有效钉扎势与温度、直流场和电流密度的关系,U(J, Hdc, T)(J-(Hdc-0.75(1-T2/Tc2)3/2,其中μ约为0.13与理论预期的μ=1/7相一致,表明该样品中可能存在涡旋玻璃相变.     

YBa2Cu3O7—δ外延薄膜的电流—电压特性

分别测量了不同磁场及其位形下Ｉ－Ｖ曲线随温度的变化关系。实验结果表明，在磁通玻璃转变温度以下，ｌｏｇＩ－ｌｏｇＶ曲线具有正曲率，在磁通玻璃转变温度以下，ｌｏｇＩ－ｌｏｇＶ曲线具有负英率；不同温度下的Ｉ－Ｖ曲线能够很好地被标度到两条曲线上，表明样品中存在磁通液态到玻璃态的转变。     

电子间的吸引与排斥

 吸引和排斥作为特定的哲学范畴,专指无机界事物相互作用中两种相反因素的对立统一关系,是对接近和分离、收缩和膨胀、化合和化分、吸收和发射、引力和斥力、聚合和裂变等特殊矛盾运动所作的科学概括。显然吸引和排斥不是单一的、不变的;它是作为无机界的基本矛盾来把握的。     

BROADENING OF RESISTIVE TRANSITION AND IRREVERSIBILITY LINE FOR EPITAXIAL

The broadening of resistive transition of c axis oriented epitaxial YBCO thin film has been measured for three configurations: (1) H∥c and H⊥I; (2) H∥ab plane and H⊥I; (3) H∥ab plane and H∥I in magnetic field up to 8 Teala(T), and for different angle θ of magnetic field relative to the ab plane with H = 4T. The results obtained indicate that the broadening of resistive transition is mainly determined by the angle θ, but is hardly related to the angle α made between magnetic field and tran sport current in ab plane. This means that the broadening of resistive transition is not determined by flux motion drived by apparent Lorentz force. Au expression of angular dependence of irreveraibility line has been given.     

用MOCVD法在YSZ衬底上制备YBCO膜

用低压ＭＯＣＶＤ多源法在单晶ＹＳＺ和具有双轴取向ＩＢＡＤＹＳＺ的金属基带上沉积了ＹＢＣＯ膜,它们的Ｊｃ（７７．３Ｋ,０Ｔ）分别为～２×１０６Ａ／ｃｍ２和～７×１０４Ａ／ｃｍ２．分析了本试验中的Ｊｃ差别原因．在单晶ＹＳＺ上ＹＢＣＯ高Ｊｃ数值显示了用ＭＯＣＶＤ制备涂层膜导体的潜力     

外磁场方向和注入电流密度对Co/Cu/Fe三明治结输出的影响

利用电子束蒸发设备和光刻工艺制备了5μm×5μm的Co/Cu/Fe三明治结.在77 K温度下对三明治结自旋相关的输运特性进行了研究,测得了μV量级的双极输出信号.研究了外加磁场方向和注入电流大小对输出信号的影响,并对结果进行了详细的讨论.     

Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals

We investigated the anisotropic electrical transport and magnetic properties of FeSe$_{0.5}$Te$_{0.5}$ single crystals grown by the self-flux method. The in-plane resistivity shows a metallic-like temperature dependence, while the out-of-plane resistivity shows a broad hump with a maximum at around 64 K. The magnetization loops for $H/\!/c$-axis and $H/\!/ab$-plane are also different, for example, there is a typical second peak for $H/\!/c$-axis. The in-plane critical current density is larger than the out-of-plane one. The coherence length and penetration depth were estimated by the Ginzburg-Landau theory. The anisotropic parameter $\gamma $ depends on the applied magnetic field and the temperature. The coupling of superconducting FeSe(Te) layers and the flux pinning mechanism relevant to anisotropy are also discussed.     

Nd1.85Ce0.15CuO4－δ单晶c-轴方向电阻的低场行为

采用自助熔剂缓冷法成功地生长出了Nd_1.85Ce_{0. 15}CuO_4-δ单晶，其零场下零电阻温度约为21K. 在0—0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线. 结果显示磁场平行和垂直样品表面时的转变温度T_p随磁场的变化均服从H=H₀(1-T_p(h)/T_p(0))²关系. 0.5T 关键词： 1.85Ce_0.15CuO_4-δ单晶')" href="#">Nd_1.85Ce_0.15CuO_4-δ单晶 输运性质     

Bi-2212单晶本征Josephson结的制备及其非线性行为

采用自助熔剂固态反应法制作了Bi2Sr2CaCu2O8+x单晶,使用光刻蚀和Ar离子刻蚀技术在Bi-2212单晶表面制作了台阶结构的Josephson本征结.用三引线和四引线法分别测量了该样品零场下c轴方向的电阻-温度(R-T)关系和恒定温度(14.4K)时的I-V特征曲线.I-V曲线具有典型的多分支非线性行为,并对该实验结果进行了讨论.