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A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in Ron.sp by 45.7% simultaneously. 相似文献
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微波消解-氢化物发生-原子荧光法测定海蜇中的痕量砷和硒 总被引:14,自引:2,他引:12
建立了氢化物发生-原子荧光光谱法(HG-AFS)测定新鲜和腌制海蜇中痕量砷、硒的分析方法。采用冷冻干燥和微波消解相结合的方法处理样品,设定了最佳的样品处理条件和仪器测定条件,解决了消解液中过剩酸对测定的干扰问题,并对共存元素干扰情况进行了研究。利用加标回收试验,对分析方法进行了验证。实验结果表明,该方法具有简便、快速、灵敏、准确等特点,适合于含水量较高的生物样品的测定。 相似文献
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为改善小型风力机随机湍流工况适应性,以NACA0012翼型为研究对象,采用非嵌入式概率配置点法,获得随机湍流工况下小型风力机叶片翼型运行攻角分布规律;在气动优化中耦合层流分离预测,基于Transition SST模型、拉丁超立方试验设计、Kriging模型和带精英策略非支配排序遗传算法NSGA-II进行高湍流低雷诺数风力机翼型气动优化。结果表明,优化翼型叶片平均风能捕获效率分别提高3.01%和4.76%,标准差分别降低4.76%和14.93%,优化翼型湍流适应性增强。该方法将翼型设计与湍流风况相匹配,为湍流工况低雷诺数翼型及小型风力机设计提供参考。 相似文献
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A low specific on-resistance SO1 LDMOS with a novel junction field plate (JFP) is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer (BOX) and thus widens the vertical conduction area. As a result, the breakdown voltage (BV) is improved and the specific on-resistance (Ron,sp) is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices. 相似文献
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运用二分性及压缩映射原理,研究一类时滞三阶微分方程概周期解的存在性,得到此类微分方程的概周期解存在的充分性定理. 相似文献
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测量了MgB2的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T2依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度Tc(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能EF、能带宽度
关键词:
新型超导体
热电势
电阻率 相似文献