GaAs/Ga1-xAlxAs半导体量子阱光辐射-热离子制冷

采用数值计算方法分析了GaAs/Ga_1-xAl_xAs 半导体量子阱的光 辐射-热离子制冷. 以漂移-扩散模型为基础，通过电流连续性方程和泊松方程自洽地计算出在外加正向偏压的 条件下半导体内部的载流子分布情况，并在此基础上计算了阱内载流子的发光复合和俄歇复 合，从而确定了半导体异质结量子阱光辐射-热离子制冷的最优条件.进一步分析了不同Al组 分的Ga_1-xAl_xAs材料以及不同的掺杂浓度对制冷效果的影响， 为该领域的实验工作提供了极有价值的参考. 关键词： 半导体异质结 光辐射 制冷     

浅水波波速公式的推导

在不同的介质中,波速的不同导致波的传播方向发生偏折.新教材中重新引入了“波的折射”的相关内容,并通过调整水的深浅来观察“波的折射”现象.因而就有必要建立波速v和水深h之间的关系,许多教师对如何推导二者之间的关系不甚了解,本文试图解决这一困惑.     

Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy

This paper investigates the ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs in detail by using a terahertz pump-emission technique. Based on theoretical modelling, it finds that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed after the excitation of pump pulse and we attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperature-dependent measurements are also performed to verify this trapping model.     

利用太赫兹时域光谱技术对环三亚甲基三硝胺（RDX）振动谱的研究

 针对爆炸物及其相关成分的感测科学和技术对于国土安全和国家防御有着至关重要的地位,对单质炸药环三亚甲基三硝胺（RDX）进行了太赫兹（THz）谱的实验测量和理论分析。利用太赫兹时域光谱技术（THz-TDS）给出了这些炸药样品在0.2THz～2.5THz范围内的折射率和吸收系数。利用密度泛函理论进行的理论模拟与实验结果符合较好。结果发现,单质炸药RDX具有特征吸收峰,利用THz-TDS技术可以对单质炸药进行检测和识别。     

Terahertz wave polarization rotation in bianisotropic metamaterials

Utilizing a polarization sensitive terahertz detection method where the detector is rotated by either 0° or 90° to measure the electric field E_{p, s} (t) of each polarization component, we have characterized the properties of split ring resonators. The strong polarization dependence of the bianisotropic-circular-current-driven and linear-polarization-induced resonances is in excellent agreement with the simulation when the p-polarized terahertz transmission is measured. However, these electromagnetic responses vanish when the s-polarized terahertz transmission is measured. There is only a transmission minimum at 1.64 THz and the terahertz polarization rotation angle of about 90° is observed. The polarized terahertz transmission amplitudes and spectra detected at orthogonal orientations show that these behaviours are probably attributed to the birefringent effect of the sample.     

Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.     

Anomalous behaviours of terahertz reflected waves transmitted from GaAs induced by optical pumping

Femtosecond pump-terahertz probe studies of carrier dynamics in semi-insulating GaAs have been investigated in detail for various pump powers. It is observed that, at high pump powers, the reflection peaks flip to the opposite polarity and dramatically enhance as the pump arrival time approaches the reflected wave of the terahertz pulse. The abnormal polarity-flip and enhancement can be interpreted by the pump-induced enhancement in the photoconductivity of GaAs and half-wave loss. Moreover, the carrier relaxation processes and surface states filling in GaAs are also studied in these measurements.     

Thermal Hysteresis in La2/3 Ca1/3 MnO3 Films Grown on Tilted SrTiO3 Substrates and Influence of External Magnetic Field

Thermal hysteresis in the resistivity of La2/3 Cu1/3MnO3 thin films grown on tilted SrTiO3 substrates is simulated by using the random network model on the basis of mixed-phase percolation between metallic and insulating domains, The metallic-insulating transition temperatures during the warming process are lower than those during the cooling process due to the difference in fraction of metallic domains between warming and cooling process. With an external magnetic field, the metallic-insulating transition temperatures shift to a higher value and the resistivities are reduced. The excellent agreement between the simulation and the experimental data further verifies that phase separation plays a crucial role in the transport process of La2/3Ca1/3MnO3 thin films.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

基于人工复合材料的太赫兹波双波段滤波

本文分别从实验和理论模拟两方面详细的讨论了金属双环和反双环两种亚波长阵列结构在太赫兹波段的双频率响应特性. 这两种双环结构都可以实现双频率调制,金属双环结构表现为两个明显的吸收峰,反双环结构则表现出明显的透过峰. 这两种结构不仅在物理结构上互补,在太赫兹波段的响应也表现为吸收和透过互补的特性. 其中高频响应来源于内环电子振荡,低频影响则来源于外环电子振荡,并且这种结构在太赫兹波段的响应与周期无关. 关键词： 太赫兹 滤波器 亚波长阵列 FDTD