High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

Properties of bacterial cellulose transparent film regenerated from dimethylacetamide–LiCl solution

Excellent transparent films were prepared from bacterial cellulose (BC) sheets by solubilization of its defibrillated freeze‐dried specimens in a solvent of dimethylacetamide (DMAc) containing 8.0% (w/w) lithium chloride (LiCl), and their properties were compared with those of the native BC. Fibrillar structure of the native BC disappeared after dissolution, and the film formed after dissolution also loose this structure. Occurence of structural transformation from crystalline to amorphous state was also evidenced by X‐ray diffraction, solid state cross polarization/magic angle spinning ¹³C‐NMR and attenuated total reflectance–Fourier transform infrared spectroscopic analyses. In addition, excellent 3D uniform structure of the transparent BC film was further evidenced by X‐ray micro computed tomography. Plastic‐like characteristic was enhanced by film formation after dissolving the BC specimens in the DMAc–LiCl solution as shown by changing mechanical properties, a slight decrease in tensile strength (67.2 to 59.6 MPa) and breaking stress (67.2 to 58.4 MPa) but significant increase in elongation at break from 3.4 to 10.5%, and improvement of work of fracture from 5.8 to 21.2 kJ/m². Copyright © 2016 John Wiley & Sons, Ltd.     

一种用激光干涉测量光波波长的新方法

提出了一种利用激光干涉仪测量光波波长的方法。通过改变在光的传播路径上垂直放置的透明玻璃与光传播方向的角度,使相干光的光程差发生变化;利用干涉条纹与转过角度、透明玻璃厚度之间的关系,通过激光干涉实验能准确测量出光波的波长。     

Ultra‐thin (002)‐oriented Al‐doped zinc oxide transparent electrode grown on oxygen‐controlled homo‐seed layer

Highly (002)‐oriented Al‐doped zinc oxide (AZO) thin films with the thickness of less than 200 nm have been deposited on an oxygen‐controlled homo‐seed layer at 200 °C by DC magnetron sputtering. With the homo‐seed layer being employed, the full‐width at half maximum (FWHM) of the (002) diffraction peak for the AZO ultra‐thin films decreased from 0.33° to 0.22°, and, the corresponding average grain size increased from 26.8 nm to 43.0 nm. The XRD rocking curves revealed that the AZO ultra‐thin film grown on the seed layer deposited in atmosphere of O₂/Ar of 0.09 exhibited the most excellent structural order. The AZO ultra‐thin film with homo‐seed layer reached a resistivity of 4.2 × 10^–4 Ω cm, carrier concentration of 5.2 × 10²⁰ cm^–3 and mobility of 28.8 cm² V^–1 s^–1. The average transmittance of the AZO ultra‐thin film with homo‐seed layer reached 85.4% in the range of 380–780 nm including the substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

The preparation of high‐quality In₂O₃:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In₂O₃:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm²/V s at a device‐relevant carrier density of 1.8 × 10²⁰ cm^–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

基于透光性能分析的微藻光生物反应器构筑板材选型

利用配备人工光源的光生物反应器(AL-PBR)培养微藻是实现微藻快速增殖,进而满足相关产业需求的重要手段。为指导AL-PBR的构筑材质选型,完善了现有方法,比选了7种市售透明板材。考虑到微藻在不同入射光波段的光生态学,应综合分析板材在光合有效辐射波段(400~700nm)、红光波段(630~700nm)、蓝光波段(430~480nm)和中波紫外线波段(UV-B,280~320nm)的透光性能。前三波段的平均透射率越高越好,UV-B波段反之。测定结果表明:如果AL-PBR以太阳光作为外部光源,现阶段宜采用进口聚碳酸酯板和普通玻璃板作为构筑材质,且前者更佳;如果以单色LEDs灯或荧光灯作为外部光源,宜选用聚甲基丙烯酸甲酯板。     

温度对CaO-MgO-Al_2O_3-SiO_2系纳米晶玻璃陶瓷结构影响的拉曼光谱研究

采用熔融法制备了CaO-MgO-Al2O3-SiO2系纳米晶玻璃陶瓷材料。在-190~310℃温度范围,利用显微共聚焦拉曼光谱测量分析了该体系纳米晶玻璃陶瓷硅氧四面体结构的变化规律。结果表明,随着温度的降低具有不同非桥氧键的硅氧四面体结构单元变化并不一致,位于三维硅氧四面体结构边缘的具有二个非桥氧键的硅氧四面体(Q2)和具有三个非桥氧键的硅氧四面体(Q1),以及完全独立于三维硅氧网络结构外的具有四个非桥氧键的硅氧四面体(Q0)受温度影响明显,其拉曼光谱均向高波数移动,键的力常数变强,硅氧键长变短。为丰富外环境对纳米晶玻璃陶瓷材料结构与性能影响的研究提供了实验依据,也为控制该体系纳米晶玻璃陶瓷材料的膨胀系数提供了一定的实验依据。     

非晶InGaZnO薄膜成分配比对透明性和迁移率的影响

利用固相反应法制备了富铟含量在不同成分配比下的高质量InGaZnO陶瓷靶材,采用脉冲激光沉积法,在基片温度为20℃、氧压为1Pa条件下,在石英玻璃衬底上生长了非晶InGaZnO薄膜,并对薄膜进行X射线衍射、透射吸收光谱、拉曼光谱与霍尔效应测试。通过对InGaZnO薄膜的测试表征,在较低温度条件下,铟含量较高的薄膜样品保持了非晶结构、可见光的高透明性和高电子迁移率,InGaZnO薄膜有望应用于电子器件。     

Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors

Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi₂Sr₂CaCu₂O_y thin films. In this study, epitaxial superconducting Bi₂Sr₂CuO_y and Bi₂Sr_1.8Nd_0.2CuO_y thin films with superior normal state conductivity are proposed as p-type transparent conductors. It is found that the Bi₂Sr_1.8Nd_0.2CuO_y thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.