| 非晶InGaZnO薄膜成分配比对透明性和迁移率的影响 |
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| 引用本文： | 苏雪琼,王丽,甘渝林,李宬汉.非晶InGaZnO薄膜成分配比对透明性和迁移率的影响[J].强激光与粒子束,2014,26(12):121007. |
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| 作者姓名： | 苏雪琼 王丽 甘渝林 李宬汉 |
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| 作者单位： | 1.北京工业大学 应用数理学院, 北京 1 001 24 |
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| 基金项目： | 北京市教育委员会2011年度科技计划重点项目，北京市人才强教深化计划-北京工业大学高层次人才引进及实施项目 |
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| 摘 要： | 利用固相反应法制备了富铟含量在不同成分配比下的高质量InGaZnO陶瓷靶材,采用脉冲激光沉积法,在基片温度为20℃、氧压为1Pa条件下,在石英玻璃衬底上生长了非晶InGaZnO薄膜,并对薄膜进行X射线衍射、透射吸收光谱、拉曼光谱与霍尔效应测试。通过对InGaZnO薄膜的测试表征,在较低温度条件下,铟含量较高的薄膜样品保持了非晶结构、可见光的高透明性和高电子迁移率,InGaZnO薄膜有望应用于电子器件。
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| 关 键 词： | 透明氧化物半导体 非晶IGZO薄膜 脉冲激光沉积 透明性 电子迁移率 |
| 收稿时间： | 2014-06-05 |
Effect of chemical composition on transparency and mobility of amorphous InGaZnO thin film |
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| Su Xueqiong,Wang Li,Gan Yulin,Li Chenghan.Effect of chemical composition on transparency and mobility of amorphous InGaZnO thin film[J].High Power Laser and Particle Beams,2014,26(12):121007. |
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| Authors: | Su Xueqiong Wang Li Gan Yulin Li Chenghan |
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| Affiliation: | 1.College of Applied Sciences,Beijing University of Technology,Beijing 100124,China |
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| Abstract: | InGaZnO ceramic target was obtained by solid-state reactions in atmospheric pressure. Pulsed laser deposition method was applied to growing amorphous InGaZnO films on the quartz glass at room temperature under 1Pa oxygen pressure. The film properties were carefully examined using X-ray diffraction (XRD), transmission spectra, Raman spectra and Hall effect measurement. InGaZnO thin films were amorphous structure and with high quality. The transmitted spectrum shows that thin films exhibit perfect light transmission and narrow band gap. The InGaZnO film contains amorphous structure, perfect light transmission and high carrier mobility at low deposition temperature with inch-indium content. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates. |
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| Keywords: | transparent oxide semiconductors amorphous IGZO films pulsed laser deposition transparency electron mobility |
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