Efficiency Improvement in Polymer Light‐Emitting Diodes by “Far‐Field” Effect of Gold Nanoparticles

The “far‐field” effect of metal nanoparticles (NPs), when chromophores localized nearby metal NPs (typically the distance >λ/10), is an important optical effect to enhance emission in photoluminescence. The far‐field effect originates mainly from the interaction between origin emission and mirror‐reflected emission, resulting in the increased irradiative rate of chromophores on the mirror‐type substrate. Here, the far‐field effect is used to improve emission efficiency of polymer light‐emitting diodes (PLEDs). A universal performance improvement is achieved for the full visible light (red, green, blue) PLEDs, utilizing gold (Au) NPs to modify the indium tin oxide (ITO) substrates; this is shown by experimental and theoretical simulation to mainly come from the far‐field effect. The optimized distance, between the NPs and chromophores with visible light emission ranging from 400 to 700 nm, is 80–120 nm. Thus the scope of the far‐field may overlap the light‐emitting profile very well to enhance the efficiency of optoelectronic devices. The 30–40% enhancement is obtained for different color‐emitting materials through distance optimization. The far‐field effect is demonstrated to enhance device performance for materials in the full‐visible spectral range, which extends the optoelectric applications of Au NPs.     

Cu2O半导体超微粒子的光学性质

本文研究了表面修饰的Cu2O半导体超微粒子的光学性质.在Cu2O超微粒子中未观察到显著的量子尺寸效应,但测量到很强的宽带光致发光,且随着激发波长变短,其发光带的峰位蓝移,发光带宽度增加.最后,分析了Cu2O超微粒子的宽带发光机制,并讨论了热处理对超微粒子的发光强度的影响.     

耦合量子阱中激子凝聚的研究进展

近年来，半导体量子阱中激子的玻色一爱因斯坦凝聚研究取得了很大进展．实验上利用耦合量子阱间接激子中电子和空穴在空间上的分离，显著提高了激子的冷却速度和寿命，成功地把激子冷却到1K以下，观察到了激子的准凝聚状态，并且在强激光照射下，发现了随光照强度增强而增大的激子发光环和环上形成的有规则斑点图案，引起了广泛的兴趣和重视．理论研究表明，发光环的出现是电子和空穴在量子阱中的反常输运行为造成的，但环上形成规则斑点的物理机理目前尚不清楚．文章介绍了这方面的实验背景和形成激子环的物理图像，指出了理论研究中存在的问题，并对解决问题的方案进行了讨论．     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

纳米混合分子聚集体材料中弗兰克尔激子迁移的相位弛豫

在有机染料ＰＩＣ－１中引入其衍生物ａｚａＰＩＣ－Ｉ形成能量势垒，改变在混合分子聚集体中ＰＩＣ－Ｉ的Ｊ－聚集体的实体长度。用双调制外差检测的累积光子回波技术研究了相干弗兰克尔激子失相过程。观测到激子失相时间Ｔ２随ａｚａＰＩＣ－１克分子数的增大从６０ｐｓ变为２２４ｐｓ。     

量子点单光子源及其制备方法研究进展

本文概述了量子保密通讯中面临的三大关键技术。并对关键技术之一的单光子源技术进行了重点介绍，如量子点作为单光子源的研究概况，单光子发射的实现、激子跃迁、双激子跃迁引起的聚束和反聚束效应和光子相关测量等。并介绍了国际上制备半导体自组装量子点在形貌、发光谱、极化以及近场光学用于量子点极化和激子发射等研究方面所取得的进展。     

Diamine的光、电性质及其在有机薄膜电致发光器件中的应用

合成了芳香族二胺类衍生物(diamine),测定了它的光、电性质.制备了diamine作为空穴传输层的二层结构有机薄膜电致发光器件,使器件的发光亮度相对单层器件有了很大的提高.并用不同区域掺杂的方法,探讨了电致发光机理.分析、讨论了激子的形成和复合区域,较好地解释了单、双层器件的不同的电流电压关系和不同的亮度电压关系.从激子的扩散方程出发,对双层掺杂器件的发光强度比数据进行了拟合,确证了激子的扩散模式.     

纳米材料二氧化锡的制备和激子态光学特性研究

报道纳米材料二氧化锡的制备和室温下激子态光学特征，应用弱量子限域下激子响应模型对结果进行了解释。     

纳米ZnO胶体可见发射机制的研究

关于ZnO可见发射机制的讨论目前尚无定论。本文研究了不同颗粒尺寸的纳米晶ZnO胶体的发射性质,观测到两个发射带,其中之一是激子发射,另一个是可见发射;发现两个发射带的峰值能量之间存在线性关系,并由此提出了可见发射机制是来自导带的电子到深陷阱的跃迁。     

Flow equations and the strong-coupling expansion for the Hubbard model

Applying the method of continuous unitary transformations to a class of Hubbard models, we reexamine the derivation of thet/U expansion for the strong-coupling case. The flow equations for the coupling parameters of the higher order effective interactions can be solved exactly, resulting in a systematic expansion of the Hamiltonian in powers oft/U, valid for any lattice in arbitrary dimension and for general band filling. The expansion ensures a correct treatment of the operator products generated by the transformation, and only involves the explicit recursive calculation of numerical coefficients. This scheme provides a unifying framework to study the strong-coupling expansion for the Hubbard model, which clarifies and circumvents several difficulties inherent to earlier approaches. Our results are compared with those of other methods, and it is shown that the freedom in the choice of the unitary transformation that eliminates interactions between different Hubbard bands can affect the effective Hamiltonian only at ordert ³/U² or higher.