The design of molecules containing planar tetracoordinate carbon

A novel preference for planar tetracoordination was observed over the conventional tetrahedral arrangement in a new series of C₅H₂, C₅H₄, C₅H₄^1+/2+ and related compounds. The stability of these molecules is assessed with the ring-opening barriers, HOMO-LUMO gap, singlet-triplet energy differences and nucleus independent chemical shift values.     

截断光束的广义M2因子

使用渐近分析法、广义截断二阶矩法和自收敛束宽法研究了旋转对称截断光束的广义M2因子，分析了这三种方法的物理联系以及如何惟一确定广义M2因子问题，并用数值计算结果做了说明. 关键词： 广义M2因子 渐近分析 广义截断二阶矩法 自收敛束宽     

Preparation and properties of isobutylene–isoprene rubber–clay nanocomposites

Isobutylene isoprene rubber (IIR)‐clay nanocomposites have been prepared successfully by melt intercalation with maleic anhydride‐grafted IIR (Ma‐g‐IIR) and organophilic clay. In IIR‐clay nanocomposites, the silicate layers of the clay were exfoliated and dispersed into the monolayer. The nanocomposites exhibited greater gas barrier properties compared with those of Ma‐g‐IIR. When 15 phr clay was added, gas barrier properties were 2.5 times greater than those of Ma‐g‐IIR. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 1182–1188, 2006     

Electrical properties of polypyrrole/p‐InP structure

The polypyrrole/p‐InP structure has been fabricated by the electrochemical polymerization of the organic polypyrrole onto the p‐InP substrate. The current–voltage (I–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) characteristics of the PPy/p‐InP structure have been determined at room temperature. The structure showed nonideal I–V behavior with the ideality factor and the barrier height 1.48 and 0.69 eV respectively. C–f measurements of the structure have been carried out using the Schottky capacitance spectroscopy technique and it has been seen that there is a good agreement between the experimental and theoretical values. Also, it has been seen that capacitance almost show a plateau up to a certain value of frequency, after which, the capacitance decreases. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the p‐InP that can follow the a.c. signal. The interface state density N_ss and relaxation time τ of the structure were determined from C–f characteristics. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1572–1579, 2006     

40,48Ca+90,96Zr融合反应的动力学模型研究

应用改进的量子分子动力学模型,在严格挑选初始核考虑弹靶结构效应的基础上,研究了近垒和垒上融合反应^40,48Ca+^90,96Zr. 研究表明: 4个反应的理论计算截面与实验值很好符合; 丰中子反应⁴⁰Ca+⁹⁶Zr的垒下融合截面比其他3个反应有明显增强的现象.为了理解丰中子反应⁴⁰Ca+⁹⁶Zr与⁴⁰Ca+⁹⁰Zr相比垒下融合截面增强,而Ca+⁹⁶Zr垒下融合截面没有明显增强的原因, 进一步分析了484个反应的融合位垒,中子转移与融合位垒的关系、中子转移与Q值的关系,结果表明: 正反应Q值会引起核子(特别是中子)转移的增强,从而导致动力学融合位垒的下降和垒下融合截面增强.     

利用谱线宽度测人发中的微量元素

通过实验证明了可以利用谱线宽度做永久工作曲线用于光谱定量分析。给出了用于测量人发中微量元素Ｃｕ，Ｚｎ，Ｆｅ和Ｃａ的永久工作曲线，利用这些工作曲线对实际样品进行了测定，所得结果与用ＩＣＰ－ＡＥＳ测得的结果相吻合。     

π-Bindungsbeitrag in Boranen, 2. Mitt.:Ab initio- und Kraftfeld-Rechnungen von Vinyldifluorboran

Ab initio calculations on vinyldifluoroborane yield a -contribution of 23 kJ/mol (5.5 kcal/mol) mainly due to the C=C bond and not to the lone pairs of the fluorine atoms. The rotational barrier was also determined. The force field calculations favour the interpretation of the bond structure derived from the theab initio results.

     

Quantitative surface analysis by Auger and x-ray photoelectron spectroscopy

Recent developments in quantitative surface analysis by Auger (AES) and x-ray photoelectron (XPS) spectroscopies are reviewed and problems relating to a more accurate quantitative interpretation of AES/XPS experimental data are discussed. Special attention is paid to consideration of elementary physical processes involved and influence of multiple scattering effects on signal line intensities. In particular, the major features of core-shell ionization by electron impact, Auger transitions and photoionization are considered qualitatively and rigorous approaches used to calculate the respective transition probabilities are analysed. It is shown that, in amorphous and polycrystalline targets, incoherent scattering of primary and signal Auger and photoelectrons can be described by solving analytically a kinetic equation with appropriate boundary conditions. The analytical results for the angular and energy distribution, the mean escape depth, and the escape probability as a function of depth of origin of signal electrons as well as that for the backscattering factor in AES are in good agreement with the corresponding Mote Carlo simulation data. Methods for inelastic background subtraction, surface composition determination and depth-profile reconstructions by angle-resolved AES/XPS are discussed. Examples of novel techniques based on x-ray induced photoemission are considered.     

Characterization of high-temperature superconductors by electron microprobe analysis

In order to optimize the physical properties of HTSC small single crystals grown from a melt for basic studies of their physical properties the influence of the environment on their impurity content was investigated by EPMA. This requires quantitative analysis of all elements being present in the crystals. The accuracy of results was affected by problems with the choice and quality of standards, by contamination but also by malfunction of microprobe electronics. The HTSC materials were found to react with mills, milling balls, crucibles and the atmosphere. These problems are being discussed and some reactions being studied for Y₁Ba₂Cu₃O_6+x (0 < x < 1) HTSC in A1₂O₃ and ZrO₂ crucibles. The crystals grown contain reproducible amounts of impurities depending on boundary conditions and exhibit a zone structure in composition particularly for Y and Ba within their range of homogeneity.     

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−E_v)-(0.79−E_v) eV taking into account the forward bias I-V data. The interface state density N_ss ranges from 4.93×10¹⁰ cm⁻² eV⁻¹ in (0.79−E_v) eV to 3.67×10¹³ cm⁻² eV⁻¹ in (0.53−E_v) eV. Furthermore, the relaxation ranges from 3.80×10⁻³ s in (0.53−E_v) eV to 4.21×10⁻⁴ s in (0.79−E_v) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.