单壁碳纳米管吸附联苯类有机物的荧光光谱分析

利用芳香族化合物对单壁碳纳米管进行了化学修饰,并利用荧光光谱以及时间分辨光谱对修饰后的单壁碳纳米管进行了表征分析.实验发现吸附对三联苯后有1个荧光峰位置发生了蓝移,这说明吸附过程使对三联苯的一些能级分布发生了变化.测量吸附前后对三联苯和蒽甲醇的荧光寿命,发现吸附后的荧光衰减曲线下降趋势更加明显,对曲线进行多指数拟合得出的荧光寿命及其数目发生了变化,分析了可能导致该现象的原因.     

掺铥PLZT透明光电陶瓷的光辐射特性

根据J-O理论研究掺Tm3+的光电陶瓷PLZT的激光潜能，利用Tm3+的420?2000 nm的吸收光谱拟合出了其强度参量，即?2=9.133￡10-21 cm2, ?4=1.529￡10-21 cm2和?6=1.712￡10-21 cm2，进而由强度参量计算了辐射跃迁几率、辐射寿命、荧光分支比和1865 nm荧光峰的受激发射截面等光学参数．     

Structural analysis of Si(1 1 1)-√21 × √21-(Ag, Au) surface by using reflection high-energy positron diffraction

The Au adsorption induced √21 × √21 super-lattice structure on the Si(1 1 1)-√3 × √3-Ag structure has been investigated using reflection high-energy positron diffraction. The height of the Au adatom was determined to be 0.59 Å from the underlying Ag layer from the rocking curve analysis with the dynamical diffraction theory. The adatoms were preferentially situated at the center of the large Ag triangle of the inequivalent triangle structure of the Si(1 1 1)-√3 × √3-Ag substrate. From the intensity distribution in the fractional-order Laue zone, the in-plane coordinate of the Au adatoms was obtained.     

Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

稀有类铥铋离子辐射光谱的相对论识别

用全相对论多组态自洽场方法,计算了高离化类铥铋原子BiXV的1s、2s、2p-、2p、3s、3p-、3p、3d-、3d、4s、4p-、4p、4d-、4d、4f-、4f、5s、5p-、5p、5d-、5d、5f-、5f、5g-、5g、6s、6p-、6p、6d-、6d、6f-、6f、6g-、6g、7s、7p-、7p、7d-、7d、7f-、7f、7g-、7g、8s、8p-、8p、8d-、8d轨道的2249个精细结构能级和辐射寿命以及其他各种跃迁参数.能级和波长的计算值和实验值符合得好.另外还发现了一些辐射寿命较长的亚稳态能级.     

碳纳米管束中的正电子理论

采用中性原子叠加模型和有限差分方法(SNA-FD)计算了大范围内不同管径的单壁碳纳米管束中的正电子情况，发现对于单壁碳纳米管束，正电子的主要湮没区域，湮没对象和正电子寿命随碳纳米管管径的不同而发生规律性变化.计算得到管径范围在0.8—1.6nm的碳纳米管束的正电子寿命范围为332—470ps，与实验测得的394ps符合较好.     

Multivariate standard addition method solved by net analyte signal calculation and rank annihilation factor analysis

This article describes the use of the net analyte signal (NAS) concept and rank annihilation factor analysis (RAFA) for building two different multivariate standard addition models called “SANAS” and “SARAF.” In the former, by the definition of a new subspace, the NAS vector of the analyte of interest in an unknown sample as well as the NAS vectors of samples spiked with various amounts of the standard solutions are calculated and then their Euclidean norms are plotted against the concentration of added standard. In this way, a simple linear standard addition graph similar to that in univariate calibration is obtained, from which the concentration of the analyte in the unknown sample and the analytical figures of merit are readily calculated. In the SARAF method, the concentration of the analyte in the unknown sample is varied iteratively until the contribution of the analyte in the response data matrix is completely annihilated. The proposed methods were evaluated by analyzing simulated absorbance data as well as by the analysis of two indicators in synthetic matrices as experimental data. The resultant predicted concentrations of unknown samples showed that the SANAS and SARAF methods both produced accurate results with relative errors of prediction lower than 5% in most cases.     

Studies on thermally induced structural changes in silicon based polymers by positron annihilation

Temperature dependence of positron annihilation lifetime spectra of polysilanes such as, poly(methyl-n-propylsilane) (PMPrS) and poly(di-n-hexylsilane) (PDHS) has been investigated. The τ₃ in PMPrS is seen to increase monotonically around the solid–liquid transition temperature. The transition temperature and free volume are observed to depend on the molecular weight and/or packing of the backbones. For PDHS, a sharp change in τ₃ and I₃ is seen at the solid–solid transition temperature. Free volume radius probability density functions, above and below the transition temperature, are presented in PMPrS and PDHS. Positron studies are complimented by conventional thermal analysis studies.     

The dynamics of asset lifetime under technological change

The variable lifetime of assets is analyzed in a serial replacement problem. Technological change impacts the maintenance cost and new asset cost. The optimal asset lifetime appears to be constant only when both costs decrease with the same rate. We identify cases when the technological change decreases or increases the optimal lifetime.