Correct Evaluation of the Effect of Transverse Effective Charges on Phonons in AlAs Quantum Dots

An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near F point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities of phonon states of different irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TCs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

光纤环形外腔半导体激光器频偏特性研究

本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源.     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

(TiNi)_x(x=2~4)团簇结构和电子结构

从团簇角度对TiNi形状记忆合金进行了量子化学从头算研究。设计并优化了等原子比(TiNi)x(x=2~4)簇的多种可能几何结构,并对较稳定构型进行电子结构的分析。结果表明,等原子比的(TiNi)n团簇以TiNi成键为主要分子骨架,小团簇有较多能量接近的异构体,TiTi成键对能量降低有较大贡献。     

Photochemical Synthesis and Spectral-Optical Characteristics of ZnO/Cu and ZnO/Ag/Cu Nanoheterostructures

The photoreduction of Cu²⁺ at the surface of ZnO nanoparticles and ZnO/Ag nanostructures was investigated. The spectral characteristics of the obtained ZnO/Cu and ZnO/Ag/Cu composites were studied in relation to the reaction conditions. It was shown that the ZnO/Ag nanoparticles have higher photocatalytic activity in the reduction of Cu²⁺ ions than the individual ZnO particles.     

Irreversible deformation of macromolecular networks

Based upon a thermodynamical approach, the generalized Onsager type of relaxation of van der Waals networks is presented. By linearly and identically coupling the set hidden variables to the network, the memory function of the system can be related to the equilibrium strain-energy function. The relaxation behavior of real networks on stretching can quantitatively be described by means of a distribution of relaxation times known from small strain experiments. Some new and interesting conclusions are discussed as to how the macroscopically non-linear visco-elastic response might be interpreted.     

Effects of Amplitude of the Radiofrequency Electromagnetic Radiation on Aqueous Suspensions and Solutions

The effects of radiofrequency (RF) (1–4) and magnetic fields (5–9) on the behavior of aqueous solutions and suspensions have been a popular subject in recent years. The mechanism of the magnetic “water memory” effect, though, is still largely unknown (5). In this work, we present evidence that the primary “receptor” of the electromagnetic radiation is a gas/liquid interface. Gas can be either already present in water or produced by the effects of electromagnetic fields. Perturbed gas/liquid interfaces require hours to equilibrate. Certain RF and magnetic signals also produce reactive oxygen and hydrogen species (superoxide, hydrogen peroxide, hydrogen, atomic hydrogen). The perturbed gas/liquid interface modifies the hydrogen bonding networks in water and also the hydration of ions and interfaces. Careful outgassing removes all of the effects of the electromagnetic fields, including the magnetic memory effect. The amplitude of the applied field influences the observed effects. Different amplitudes of RF radiation perturb the interfacial water in different ways and consequently affect the behavior of colloids and ions in specific manners. For instance, the bulk and template precipitation of calcium carbonate, zeta potentials of suspended colloids, rate of dissolution of colloidal silica, and attachment of colloidal silica to metal surfaces are modified in specific ways with the low amplitude or high amplitude RF treatments described in this paper. The solubility/diffusivity of gas species is also modified in a different manner, and it is probably at the core of the specificity of the RF amplitude effects.     

半导体氧化物光催化裂解水制氢

本文综述了半导体氧化物光催化裂解水制氢的反应机理,以及近年来半导体光催化裂解水制氢的研究进展。讨论了各种因素对材料光催化性能的影响以及改性方法,并对今后的研究方向提出了一些建议。