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51.
研究了邻苯二酚与乙醇气固相单醚化反应用固体酸催化剂表面上的积炭行为,并用TG-DTA,BET,GC-MS,FT-IR和元素分析等手段对积炭物种进行了表征.结果表明,催化剂上有两种类型的积炭,一类属可溶性积炭,主要由二苯醚及其衍生物组成,可在低温燃烧除去;另一类属不可溶性积炭,主要为缺氢的芳烃类聚合物或类石墨碳,需在高温下才能烧除.积炭主要发生在4~8nm范围的中孔内,导致反应后的催化剂大孔范围的孔分布所占的分数增大.随着反应的进行,总积炭量逐渐增多. 相似文献
52.
Ge JP Wang J Zhang HX Wang X Peng Q Li YD 《Chemistry (Weinheim an der Bergstrasse, Germany)》2005,11(6):1889-1894
Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the 200 directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm(-1), no shoulder) could be used as a unique probe for the study of PbS nanomaterials. 相似文献
53.
Mohamed Boumerzoug Marcel Boudreau Peter Mascher 《Plasma Chemistry and Plasma Processing》1997,17(2):181-192
Real-time optical emission spectroscopy (OES) was used to monitor the deposition of TiN both from mixtures of tetrakis(dimethylamino)titanium
(TDMATi)-N2 and TiCl4-H2-N2 in an electron cyclotron resonance chemical vapor deposition system. The accurate control of the ratio of the emission intensities
of ionized nitrogen at 391.4 nm and molecular nitrogen at 357.7 nm (N
2
+
/N2) led to low temperature deposition of stoichiometric TiN (Ti/N ≈ 1) and very low resistivity in both cases. It was found
that high ion density plasmas are crucial for a considerable reduction of the deposition temperature while maintaining good
film quality. OES shows that the abundance of certain excited plasma species is not only dependent on the gas mixture and
the deposition parameters, such as total pressure and microwave power, but also is strongly affected by the magnetic field
configuration. The deposition rate and the film resistivity can be related to the emission intensity ratio, I(N
2
+
)/I(N2). Finally, the two processes are compared in terms of the quality of as-deposited and heat-treated films. The comparison
shows that the films obtained with TDMATi exhibit lower resistivity and are thermally more stable than with TiCl4. 相似文献
54.
化学气相淀积法合成氮化铝薄膜及其工艺设计 总被引:1,自引:0,他引:1
对AlBr3-NH3-N2体系化学气相淀积法合成A1N膜进行了热力学分析和工艺设计,研究了在不同淀积温度和体系总压时,体系中主要气态物种的平衡分压和A1N膜的理论淀积速率与源温和载气流量的关系,并与微波等离子体化学气相淀积A1N膜的实验结果进行了比较。 相似文献
55.
M. Röder J. Hahn U. Falke S. Schulze F. Richter M. Hietschold 《Mikrochimica acta》1997,125(1-4):283-286
A series of BN films was deposited by means of r.f. magnetron sputtering of a h-BN target onto Si(1OO) surfaces. Hereby, the substrate bias voltage was varied. Special interest is focussed to the influence of the deposition parameters on the orientation of the growing hexagonal BN film with respect to the substrate. For structural investigation, cross section samples were prepared. In addition to HRTEM and diffraction investigations, especially electron energy loss spectroscopy (EELS) was applied successfully for phase identification. For negative bias voltages of U
B
=–300 V and U
B
=–350V, we found a phase system consisting of a first-grown 25 nm thick layer of hexagonal structure with the c axis parallel to the substrate surface followed by the cubic phase.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday 相似文献
56.
IntroductionIthasbccndcmonstratcdthatmcthancrcformingt"ithcarbondioxidcpr0ducessynthcsisgasrichincarbonmonoxidc-x"hichisuscfulforthcs}nthcsisofaccticacid'dimcthylcthcrando.o-alcoholsll'2].Carbondioxidcref0rmingismorccndothcrmicthanstcamrcformingfCH4 CO2,'2CO 2H2Ai/'2,,=2473kJ..ol-1(l)Accordingl\"thisrcact1onnccdshighcrtcmpcraturcandlimitsspaccvclocityoffccdgas,Wehavcprct'ious1\studicdmcthancrcformingt"lthC02inthcmonotubcproccssl3J.Inordertoconvcrtmcthancinfccdgascomplctcl}',thcspaccvcloci… 相似文献
57.
Stefka Taneva Mira Busheva 《Journal of photochemistry and photobiology. B, Biology》1991,10(4):315-327
Electric light scattering and microelectrophoresis were applied to investigate the electric moments (permanent dipole moment and electric polarizability and electrophoretic mobility of envelope-free chloroplasts and photosystem II (PS II particles. The effect of the removal of the extrinsic polypeptides (18, 24 and 33 kDa) on the electric moments was also studied. A significant difference was observed between the orientation behaviour of chloroplasts and PS II preparations. The data indicate that the permanent and induced dipole moments contribute to the orientation of the PS II particles, whereas chloroplasts possess induced dipole moment only.
NaCl and Tris treatments of PS II preparations influence both the transverse permanent dipole moment and the electric polarizability of PS II particles. The increase in the electrophoretic mobility of PS II particles on removal of the extrinsic proteins corresponds to an increase in the electric polarizability value, demonstrating its interfacial nature. 相似文献
58.
The concept of the residence time τksp of an atom in a kink site has recently been suggested to understand the processes in electrochemical deposition of alloys
and intermetallic compounds. Different kink sites with different residence times must be defined for alloys and intermetallic
compounds. Based on this model, the finite Markov chain theory is applied to describe the selectivity of the growth process.
An analytical relationship between the alloy composition and the metal ion concentrations in the electrolyte is derived. General
model parameters are ratios g
i = K
ii/K
ij of equilibrium constants of the reaction of electrolyte ions with different kink sites on the surface (i, j representing different alloy components). These ratios are called selectivity constants. For simple conditions, the equation
g
i ≈ τii/τij connects the g
i values with the residence times. The theory is tested in the deposition of alloys Co-Ni (anomalous co-deposition) and Ni-Mo
(induced co-deposition). Additionally, Bi2Te3, an example of stoichiometric semiconductor deposition, is treated.
Published in Russian in Elektrokhimiya, 2006, Vol. 42, No. 10, pp. 1216–1223.
The text was submitted by the authors in English. 相似文献
59.
Y. Shacham-Diamand Y. Sverdlov V. Bogush R. Ofek-Almog 《Journal of Solid State Electrochemistry》2007,11(7):929-938
Thin cobalt alloy films have been obtained using electroless deposition solution with two reducing agents: dimethylamine borane
(DMAB) and sodium hypophosphite. This system allows spontaneous and self-activated deposition of barrier layers on Cu lines
and via contacts for ultra large scale integration (ULSI) interconnects applications. This work presents a study of the solution
composition effects on the material properties and composition of the films. First, we present the deposition rates, the electrical
resistance, the various element profiles in the thin film, and the thin film roughness. Next, we discuss the film’s composition
and its dependence on the ratio between the reducing agents composition in the solution. The experimental results suggest
that the film phosphorous and boron composition is determined by the surface adsorption rates of the reducing agents. Therefore,
a surface co-adsorption model of the two reducing agents is proposed, formulated, analyzed, and compared to the experimental
results. Finally, we discuss the model and its significance to the formation of high-quality ultra-thin barrier layers.
Dedicated to Professor Dr. Algirdas Vaskelis on the occasion of his 70th birthday. 相似文献
60.
The determination of sulphide at an electrochemically generated nickel oxide layer at glassy carbon and screen-printed electrodes in acidic media has been examined and appraised. The NiO layer was found to produce a stripping-like signal to sulphide and gave a linear peak current response from 20 to 90 μM. The response was further enhanced by repetitive cycling allowing accumulation of nickel sulphide at the electrode surface such that lower micromolar levels of sulphide (i.e. 5 μM) can be determined. The response at the NiO layer to sulphide is shown to be reproducible over a period of 24 h, thereby offering the development of a disposable amperometric sensor for sulphide. 相似文献