Optical emission spectroscopy as a real time diagnostic tool for plasma-assisted deposition of TiN |
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Authors: | Mohamed Boumerzoug Marcel Boudreau Peter Mascher |
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Institution: | (1) Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Ontario, Canada |
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Abstract: | Real-time optical emission spectroscopy (OES) was used to monitor the deposition of TiN both from mixtures of tetrakis(dimethylamino)titanium
(TDMATi)-N2 and TiCl4-H2-N2 in an electron cyclotron resonance chemical vapor deposition system. The accurate control of the ratio of the emission intensities
of ionized nitrogen at 391.4 nm and molecular nitrogen at 357.7 nm (N
2
+
/N2) led to low temperature deposition of stoichiometric TiN (Ti/N ≈ 1) and very low resistivity in both cases. It was found
that high ion density plasmas are crucial for a considerable reduction of the deposition temperature while maintaining good
film quality. OES shows that the abundance of certain excited plasma species is not only dependent on the gas mixture and
the deposition parameters, such as total pressure and microwave power, but also is strongly affected by the magnetic field
configuration. The deposition rate and the film resistivity can be related to the emission intensity ratio, I(N
2
+
)/I(N2). Finally, the two processes are compared in terms of the quality of as-deposited and heat-treated films. The comparison
shows that the films obtained with TDMATi exhibit lower resistivity and are thermally more stable than with TiCl4. |
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Keywords: | Electron cyclotron resonance plasma optical emission spectroscopy TiN deposition |
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