Gd2O3:Eu纳米晶的制备及其光谱性质研究

以EDTA为络合剂，聚乙二醇为有机分散剂，用络合溶胶—凝胶法制备出Gd2O3:Eu纳米晶。用XRD，SEM，X—射线能量色散谱仪(EDS)，荧光分光光度计等分析手段对Gd2O3:Eu的纳米晶结构、形貌、组分的均匀性以及发光特性进行了研究。结果表明：EDTA—M凝胶仅在800℃焙烧即可得到颗粒细小、组分均匀、纯立方相的Gd2O3:Eu纳米晶，颗粒基本呈球形，粒径为30nm左右。对样品的激发光谱、发射光谱测定表明：Gd2O3:Eu纳米晶在269nm光激发下发红光，发射光谱谱峰在611nm，与体材料基本相同；激发光谱中电荷迁移带(CTB)明显红移，从体材料的255nm移至269nm，移动了约14nm；猝灭浓度从体材料的6％提高到8％。     

热丝加热电流对CH薄膜沉积速率和表面形貌的影响

 热丝辅助裂解法是结合气相沉积制备聚对二甲苯薄膜和热丝化学气相沉积而形成的一种制-CH薄膜的新方法。热丝辅助裂解法的最大特点就是在保持低衬底温度情况下可以获得高沉积速率，而热丝加热电流对薄膜沉积速率和薄膜表面形貌具有重要影响。研究表明，热丝加热电流越大，薄膜沉积速率越高，在加热电流9A时，薄膜沉积速率可达0.002mm/min，同时薄膜表面粗糙度随之增加，薄膜表面也开始出现其它元素污染，因此，一般热丝加热电流选择为7A附近。     

蓝光相变光盘的多层膜结构设计

为了使光盘获得优良的记录／读出性能并能够长期稳定地使用，必须优化设计相变光盘的多层膜结构。采用自行设计的模拟分析相变光盘读出过程设计软件，从光学角度出发模拟计算了蓝光(405nm)相变光盘的膜层结构，研究了多层膜系的反射率和反射率对比度等光学参量与各层膜厚度和槽深的关系。研究得出的最佳多层膜结构为：下介电层／记录层／上介电层／反射层的厚度对于台记录为100nm／10nm／25nm，／60nm，而对于槽记录则为140nm／15nm／30nm，／60nm，槽深为50nm。模拟计算结果对于将来高密度蓝光相变光盘的制备具有一定的指导意义。     

Photo-induced evolution of copper sheets from cluster molecules and its application to photolithographic copper patterning

UV photoexcitation of (t-butylethynyl copper)₂₄ cluster films induces segregation of the crystals into metallic and organic phases and leads to evolve the metallic sheets sandwiched by organic polymers. The growth of the metallic crystals in the plane of the photo-electromagnetic field is attributed due to plasmon-plasmon interaction among nanoparticles embedded in dielectric polymer matrices. The surface enhanced photochemical reaction of residual cluster molecules on the photon incident direction is expected to take an important role for joining the metal particles to produce a metallic sheet. We can apply this phenomenon for photolithographic copper pattern generation on a flexible base plate.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

Asymptotic and boundary integral formulae for the computational reconstruction of small conductivity imperfections

In this paper we investigate the electrostatic problem of determining conductivity profiles from the knowledge of boundary currents and voltages. We obtain an improved estimate for the voltage potential of a two-dimensional conductor having finitely many circular inclusions and piecewise constant conductivity profile. We derive an asymptotic expansion for the voltage potential in terms of the reference voltage potential and the location, size, and conductivity of the inhomogeneities. This representation is used to formulate the nonlinear least squares problem for estimating the location and size of the inhomogeneities. Required boundary data for the voltage potential are generated numerically by solving a system of integral equations. Computational experiments are presented to demonstrate the effectiveness of our identification procedure.     

Cr^4＋：YAG可饱和吸收特性测量

测量了Cr4+:YAG材料的可饱和吸收特性,用多种数据分析方法处理了实验结果,Cr4+:YAG的基态吸收截面σgs=11×10-19cm2,激发态吸收截面σes=1.2×10-19cm2。     

2,3-二硫甲基-6,7-二硫十六烷基四硫代富瓦烯的合成

Langmuir-Blodgett(简称LB)法作为分子水平的成膜技术,能制备纳米级几乎无缺陷的单分子层或多分子层膜,在微电子学,分子器件,磁性有序材料,生物膜等方面有广泛的应用前景。目前,四硫富瓦烯类衍生物作为导电LB膜材料的研究,引起人们极大的兴     

A note on the reflection principle for the biharmonic equation and the Stokes system

In this note, we discuss the reflection principle of the Stokes system in a half space for the threedimensional case, and of the biharmonic equation. Admitting different boundary conditions, we use the reflection principle to prove uniqueness of solutions of the Stokes system or the biharmonic equation in weightedLq-spaces     

Wavelength dependence in photochemical vapor deposition of aluminum film using dimethylaluminum hydride

In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH₃)₂AlH, a surface reaction dominated below a (CH₃)₂AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.