手性负折射率材料的最新进展

阐述了手性负折射率现象的产生机制;总结了近几年国内外手性负折射率材料在仿真模拟和实验制备方面的研究进展;分析了手性负折射率材料的旋光性、手性参数、损耗等;介绍了手性负折射率材料在各个领域的应用。分析认为,探索手性负折射率材料的新机制、新方法和新材料,从而在可见光波段实现负折射率是未来手性负折射率材料的重要发展方向之一。     

操控非线性损耗实现稳定的高功率单频激光及可调谐激光的输出

通过操控线性和非线性损耗,使激光器满足单频运转的物理条件,获得了稳定高功率单频激光输出.利用非线性损耗取代了现有的标准具锁定技术,实现无调制锁定的宽带连续可调谐激光输出.     

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi₂Mg_2/3Nb_4/3O₇ thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi₂Mg_2/3Nb_4/3O₇ thin-films would be suitable for thin-film multi-layer capacitor applications.     

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

The in-situ capacitance and dielectric properties of 25 MeV C⁴⁺ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 10¹⁰ – 5 × 10¹³ ions/cm². The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.     

隔膜对双电层电容器和混合型电池-超级电容器的电化学性能的影响

隔膜是双电层电容器和混合型电池-超级电容器等电化学储能器件的重要组成元件.本文采用1 mol?L-1四乙基四氟硼酸铵的丙烯碳酸酯电解液制备了基于活性炭的扣式双电层电容器,并采用1 mol?L-1六氟磷酸锂锂离子电解液制备了(LiNi0.5Co0.2Mn0.3O2+活性炭)/石墨体系的混合型电池-超级电容器.研究了不同类型隔膜的物理化学性能,以及其对双电层电容器和混合型电池-超级电容器的电化学性能的影响.四种隔膜分别是无纺布聚丙烯毡、多孔聚丙烯薄膜、Al2O3涂层的聚丙烯薄膜和纤维素纸隔膜.进行了表面形貌、差示扫描量热、电解液吸液量和表观接触角测试表征.电化学测试表明,采用纤维素隔膜的双电层电容器具有最高的比电容和更优的倍率性能,电容器的自放电性能差别不大.而对于混合型电池-超级电容器,采用聚丙烯薄膜和无纺布聚丙烯毡隔膜器件的比容量比其它器件约高20%,且采用纤维素隔膜的器件自放电率最高.     

Effects of acid etching on the structure of PtNi catalyst and total exposed active sites

The integration technology of hydrogen preparation–hydrogen storage not only can utilize hydrogen energy efficiently but also can improve the selectivity of the electrode maximally. In the present work, the structure and composition of the PtNi catalyst was characterized by X-ray diffraction (XRD); and its electrochemical properties, morphology, and surface binding energy were analyzed by cyclic voltammetry (CV) and linear scanning voltammetry (LSV), scanning electron microscopy equipped with energy-dispersive spectrometry (SEM-EDS), and X-ray photoelectron spectroscopy (XPS), respectively. The effects of different acid etching treatments (e.g., etching time, etchant concentration, and etching temperature) on the structure and surface active sites were investigated by the orthogonal experiment. The experimental results reveal that after etching with 0.5 mol/L of perchloric acid for 0.5 h at 60°C, the electrode weight loss of the PtNi catalyst is mainly attributed to the large loss of Ni atoms in film layer. This results in the reduced alloy phase in film layer and the appearance of Pt characteristic diffraction peak. The relative content of Pt on the surface of the film electrode increases significantly, and the total number of active sites also increases correspondingly. The binding energy of Pt4f_7/2 decreases by 0.19 eV, and the number of active sites involved in hydrogen release decreases, indicative of the reduced promotion effect of the PtNi catalyst on hydrogen release.     

Maximization of Spatial Charge Density: An Approach to Ultrahigh Energy Density of Capacitive Charge Storage

Capacitive energy storage has advantages of high power density, long lifespan, and good safety, but is restricted by low energy density. Inspired by the charge storage mechanism of batteries, a spatial charge density (SCD) maximization strategy is developed to compensate this shortage by densely and neatly packing ionic charges in capacitive materials. A record high SCD (ca. 550 C cm^?3) was achieved by balancing the valance and size of charge‐carrier ions and matching the ion sizes with the pore structure of electrode materials, nearly five times higher than those of conventional ones (ca. 120 C cm^?3). The maximization of SCD was confirmed by Monte Carlo calculations, molecular dynamics simulations, and in situ electrochemical Raman spectroscopy. A full‐cell supercapacitor was further constructed; it delivers an ultrahigh energy density of 165 Wh L^?1 at a power density of 150 WL^?1 and retains 120 Wh L^?1 even at 36 kW L^?1, opening a pathway towards high‐energy‐density capacitive energy storage.     

The credit risk+ model with general sector correlations

We consider an enhancement of the credit risk⁺ model to incorporate correlations between sectors. We model the sector default rates as linear combinations of a common set of independent variables that represent macro-economic variables or risk factors. We also derive the formula for exact VaR contributions at the obligor level.     

Flattened chromatic dispersion in square photonic crystal fibers with low confinement losses

This research presents a simple index-guiding square photonic crystal fibers (SPCFs) that has a silica core surrounded by air hole with two different diameters. It is demonstrated that the designed two-different-size hole-arrayed index-guiding SPCFs has a ultra-flattened chromatic dispersion of 0 ± 0.9 ps/(nm·km) in a wavelength range of 1.34 to 1.61 μm and low confinement loss of less than 10⁻⁷ dB/m in a wavelength range of 1.2 to 1.7 μm. It has also been shown that the proposed SPCFs show reasonable dispersion tolerance.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.