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Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering
Institution:1. Advanced Circuit Substrate Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, South Korea;2. Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, South Korea;3. Photovoltaic Lab., Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, South Korea
Abstract:Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi2Mg2/3Nb4/3O7 thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi2Mg2/3Nb4/3O7 thin-films would be suitable for thin-film multi-layer capacitor applications.
Keywords:Thin-film multi-layer capacitors  rf/dc sputtering  Various capacitor dimensions  Inner and outer Cu electrodes
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