低位错ZnSe单晶的生长

采用化学气相输运法(CVT)在适合的温度和I2含量的条件下,生长出了25mm×3mm的ZnSe单晶,位错密度为6.5×103个/cm2.对ZnSe单晶进行光学性能分析,在10.6μm处的透过率超过70;,在10.6μm处的吸收系数为7.72×10-4/cm.     

ZnSe红外窗口材料的性能及其制备

ZnSe是一种优秀的红外窗口材料,得到广泛的关注.在本文叙述了ZnSe红外窗口材料的光学特性和力学特性,以及详细地描述ZnSe体单晶熔体法、气相法、溶液法和固相再结晶制备技术及其影响因素.     

Preparation of CdSe/ZnSe Core-shell Nanocrystal in One-step Reaction

IntroductionSemiconductor nanocrystals show strong size-de-pendent properties when their size is similar to or smal-ler than the excition Bohr radius of the bulk materialsand quantum confinement occurs for the space-con-fined motion of the electrons and holes in the nano-re-gion of materials[1—5].Because of the excellent opticaland electronic properties,semiconductor nanocrystalsare currently being investigated as emitting materials forthin-film light-emitting devices(LED)[6,7],low-thresh-ol…     

ZnSe/GaAs/电解液光电化学特性的研究

复合半导体材料用于液结太阳电池的报导已很多，如GaAlAs／GaAs、InGaAs／InAlAs、InGaAs／InP等研究已较为深入m对于Znse／GaAs半导体的研究，目前多集中于它的沉积技术及电致发光等方面的研究，其用于液结太阳电池的研究报导还不多[1-3]．任何一种单一的半导体电极，无论禁带     

(ZnSe)_(12)在外电场下的基态性质和激发特性研究

以SBKJC为基组,采用密度泛函PBE0方法研究了不同外电场(0-0.030 a.u.)对(ZnSe)_(12)的基态几何结构、电荷分布、能量、电偶极矩、能隙、最小振动频率的影响;继而采用含时的TD-PBE0方法研究了(ZnSe)_(12)在外电场下的激发特性,并模拟了紫外-可见光谱.研究结果表明:外电场的加入导致分子对称性降低,当电场从0 a.u.变化到0.030 a.u.时,偶极矩逐渐增加,体系总能量、最小谐振频率和能隙一直减小.外电场对(ZnSe)_(12)的激发特性影响较大,随着电场的增加,紫外-可见光谱发生红移,同时对振子强度有很大影响,原来振子强度不为零的激发态变弱或成为禁阻跃迁,而原来振子强度很弱或禁阻的激发态变得很强.可以通过改变外电场来改变(ZnSe)_(12)的基态性质,以及控制(ZnSe)_(12)的吸收和发光特性.     

Implementation of Na diffusion layer at Cu2ZnSnSe4/Mo interface for flexible thin film solar cell fabricated on Ti foil by solid state selenization

A Cu₂ZnSnSe₄ (CZTSe) photovoltaic absorber thin films were prepared using a 2-step selenization process on a Ti substrate including a Na precursor layer and a Na-free Ti substrate, and the effect of Na on the solar cell performance was compared. A CZTSe flexible solar cell fabricated on a Ti foil substrate exhibited an efficiency of 3.06%, which was less than half that of a solar cell fabricated on a soda lime glass substrate. This was attributed to the absence of Na and severe Zn crowding near the back contact. By depositing a 100‐nm-thick sodalime glass thin film on a Ti substrate to supply Na, the efficiency increased up to 5.59%. In the Na-doped CZTSe absorber layer grown on the Ti substrate, the back crowding of Zn was eliminated and the upper part of the absorption layer was converted to a Zn-rich environment, which prevented the formation of Cu_Zn antisite defects.     

Deconvolution of temperature dependence of conductivity,its reduced activation energy,and Hall-effect data for analysing impurity conduction in n-ZnSe

ABSTRACT

The temperature dependence of the reduced activation energy w?=?ε/k_BT of the conductivity σ has been utilised for determining the impurity conduction mechanism in doped semiconductors in many studies. Herein, the formula for deconvoluting w when plural conduction mechanisms appear is used to confirm the analysis of the data of the Hall-effect measurements on Al-doped n-ZnSe samples. The analysis is performed on the basis of an impurity-Hubbard-band model which includes ε ₂ conduction in the top Hubbard band as well as ε ₃ and Efros-Shklovskii (ES) variable-range hopping (VRH) conduction processes in the bottom Hubbard band. As the result of the analysis, transitions among the three hopping conduction mechanisms of ε ₂, ε ₃, and ES VRH are clearly shown in the temperature dependence of w as well as in that of the Hall mobility, which are hardly noticed in the temperature dependence of σ. In addition, the power-law exponent of the prefactor of ES VRH conductivity is determined through the fit to the temperature dependence of w to show that it decreases from ～ 1.5 to ～ 0 with increasing net donor concentration.     

Influence of varying molar concentration on the properties of electrochemically-deposited zirconium-doped ZnSe thin films

The effects of molar concentration on ZnSe and Zr-doped ZnSe thin films were studied after successful synthesis by electrochemical technique. 0.1 M zinc tetraoxosulphate (VI) heptahydrate (ZnSO₄·7H₂O) and 0.1 M selenium powder respectively served as the cationic and anionic precursors while 0.1 mol% of zirconium oxidchlorid (ZrOCl₂·8H₂O) was used as the dopant. The morphology, structure, elemental, light response, and electrical features of the samples were studied. The films exhibited uniform distribution of spherical balls with crystalline peaks at (220), (221), (300), and (310) planes. The elemental composition of the film confirmed the deposition of as-synthesized elements. Improved optical characteristics and reduced band gap energies of the films from 2.4 eV to 2.0 eV were gotten upon the addition of zirconium. Electrical results showed increased material conductivity at increasing dopant percentages. The synthesized materials are potentially applied in optoelectronics and photovoltaics.     

CVT一步生长的ZnSe单晶的光电特性研究

本文采用化学气相输运(CVT)法,由Zn(5N)和Se(5N)一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析。研究表明,生长出的ZnSe单晶仅显露(111)面,红外透过率约为40%～42%,具有较高的结晶质量。该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3×109Ω.cm。     

ZnSe量子点增敏鲁米诺-铁氰化钾化学发光测定牛奶中的己烯雌酚

碱性介质中,ZnSe量子点能够增强鲁米诺-铁氰化钾体系的化学发光,己烯雌酚对该体系的化学发光有很强的抑制作用,据此建立了测定己烯雌酚的新方法,并对可能的反应机理进行了探讨。结果表明,在优化实验条件下,己烯雌酚在6.0×10^-9~4.0×10^-5 mol／L的浓度范围内与发光强度呈良好的线性关系,检出限为2.0×10^-9 mol/L(信噪比S／N=3)。对于浓度为4.0×10^-6 mol／L的己烯雌酚,测定11次的相对标准偏差为1.4％。将该体系用于牛奶中己烯雌酚的测定,回收率为94.47％~107.61％。