Hetero‐tri‐spin [2p‐3d‐4f] Chain Compounds Based on Nitronyl Nitroxide Lanthanide Metallo‐Ligands: Synthesis,Structure, and Magnetic Properties

Employing nitronyl nitroxide lanthanide(III) complexes as metallo‐ligands allowed the efficient and highly selective preparation of three series of unprecedented hetero‐tri‐spin (Cu?Ln‐radical) one‐dimensional compounds. These 2p–3d–4f spin systems, namely [Ln₃Cu(hfac)₁₁(NitPhOAll)₄] (Ln^III=Gd 1_Gd , Tb 1_Tb , Dy 1_Dy ; NitPhOAll=2‐(4′‐allyloxyphenyl)‐4,4,5,5‐tetramethylimidazoline‐1‐oxyl‐3‐oxide), [Ln₃Cu(hfac)₁₁(NitPhOPr)₄] (Ln^III=Gd 2_Gd , Tb 2_Tb , Dy 2_Dy , Ho 2_Ho , Yb 2_Yb ; NitPhOPr=2‐(4′‐propoxyphenyl)‐4,4,5,5‐tetramethyl‐imidazoline‐1‐oxyl‐3‐oxide) and [Ln₃Cu(hfac)₁₁(NitPhOBz)₄] (Ln^III=Gd 3_Gd , Tb 3_Tb , Dy 3_Dy ; NitPhOBz=2‐(4′‐benzyloxyphenyl)‐4,4,5,5‐tetramethyl‐imidazoline‐1‐oxyl‐3‐oxide) involve O‐bound nitronyl nitroxide radicals as bridging ligands in chain structures with a [Cu‐Nit‐Ln‐Nit‐Ln‐Nit‐Ln‐Nit] repeating unit. The dc magnetic studies show that ferromagnetic metal–radical interactions take place in these hetero‐tri‐spin chain complexes, these and the next‐neighbor interactions have been quantified for the Gd derivatives. Complexes 1_Tb and 2_Tb exhibit frequency dependence of ac magnetic susceptibilities, indicating single‐chain magnet behavior.     

Synthesis,Characterizations, Magnetism and Thermal Degradation of a 2‐Fold Interpenetrated 3D Cobalt‐Organic Framework

A new coordination polymer, [Co₂(L)₂(4,4′‐bipy)]_n·3nH₂O ( 1 ) based on 5‐(3‐methyl‐5‐phenyl‐4H‐1,2,4‐triazol‐4‐yl)isophthalic acid (H₂ L ) and 4,4′‐bipyridine (4,4′‐bipy) has been hydrothermally synthesized and characterized by single‐crystal X‐ray diffraction, XRPD, IR, and elemental analysis. Temperature‐dependent magnetic susceptibility and thermal degradation for 1 were also studied. The asymmetric unit of compound 1 consists of two crystallographically independent Co(II) ion, two L ^2? ligand, one 4,4′‐bipy ligand, and three lattice water molecules. The 2D triangle networks were linked by the bridging 4,4′‐bipy ligand to give rise to a 2‐fold interpenetrated 3D architecture. The simplest cyclic motif of the 2D networks is a triangle ring consisting of three Co(II) cations and three L ^2? ligands. So we can define Co(II) ions as 4‐connected nodes and the L ^2? ligands as 3‐connected nodes. Thus, the 3D structure can be described as a 2‐fold parallel interpenetrated ins InS 3,4‐conn topology.     

Synthesis,Structure and Magnetic Property of One Ni~Ⅱ Based Coordination Polymer

One new coordination polymer, [Ni(m-bix)(m-BDC)](1, m-bix = 1,3-bis(imidazol-1-ylmethyl)benzene, m-BDC = 1,3-benzenedicarboxylic acids), has been hydrothermally synthesized and structurally characterized by elemental analysis, IR, TGA and X-ray single-crystal diffraction. The green block crystal of complex 1(C22H18N4Ni O4) belongs to monoclinic system, space group P21/c with a = 10.0418(3), b = 23.8651(6), c = 8.7872(2) A, β = 112.333(3)o, V = 1947.88(9)A3, Z = 4, Dc = 1.572 g/cm3, Mr = 461.11, F(000) = 952, R = 0.0335 and w R = 0.0683 for 2827 observed reflections(I 2σ(I)). Complex 1 exhibits a novel 6-connected 3D sxd type topological framework. The magnetic characterization of complex 1 shows antiferromagnetic coupling exchange.     

二维磁性纳米材料的可控合成及磁性调控

自旋电子学的研究重点在于同时利用电子的电荷和自旋两个自由度对信息进行处理和存储,其具有运行速度快、存储密度高和能耗低等优势。毫无疑问,发展二维磁性纳米材料的可控合成方法及磁性调控策略,对于新型自旋电子学器件的构筑具有重要的科学意义和应用价值。然而,目前得到的二维磁性纳米材料的种类十分有限,而且合成方法及磁性调控手段相对单一,极大地限制了该领域的发展。本文首先根据磁性的来源,对二维磁性纳米材料进行了分类,介绍了诱导产生的磁性和具有本征磁性的二维纳米材料,然后详细地归纳了二维磁性纳米材料常见的合成方法,如机械剥离法、电化学剥离法、化学气相沉积法以及液相合成方法等。此外,着重总结了二维材料磁性的主要调控手段,最后展望了该领域遇到的瓶颈、未来的研究重点及应用前景。     

Collective All‐Carbon Magnetism in Triangulene Dimers

Triangular zigzag nanographenes, such as triangulene and its π‐extended homologues, have received widespread attention as organic nanomagnets for molecular spintronics, and may serve as building blocks for high‐spin networks with long‐range magnetic order, which are of immense fundamental and technological relevance. As a first step towards these lines, we present the on‐surface synthesis and a proof‐of‐principle experimental study of magnetism in covalently bonded triangulene dimers. On‐surface reactions of rationally designed precursor molecules on Au(111) lead to the selective formation of triangulene dimers in which the triangulene units are either directly connected through their minority sublattice atoms, or are separated via a 1,4‐phenylene spacer. The chemical structures of the dimers have been characterized by bond‐resolved scanning tunneling microscopy. Scanning tunneling spectroscopy and inelastic electron tunneling spectroscopy measurements reveal collective singlet–triplet spin excitations in the dimers, demonstrating efficient intertriangulene magnetic coupling.     

A novel three‐dimensional tetranuclear CoII coordination polymer with water hexamers based on the V‐shaped tetracarboxylate ligand 4‐(2,4‐dicarboxylatophenoxy)phthalate

A new coordination polymer (CP), namely, poly[[diaquatris[μ₂‐1,4‐bis(1H‐imidazol‐1‐yl)benzene]bis[μ₆‐4‐(2,4‐dicarboxylatophenoxy)phthalato]tetracobalt(II)] hexahydrate], {[Co₄(C₁₆H₆O₉)₂(C₁₂H₁₀N₄)₃(H₂O)₂]·6H₂O}_n, has been synthesized by solvothermal reaction. The CP was fully characterized by IR spectroscopy, elemental analysis, thermogravimetric analysis, and powder and single‐crystal X‐ray diffraction. It presents a three‐dimensional (3D) structure based on tetranuclear Co^II secondary building units (SBUs) with a tfz‐d net and point symbol (4³)₂(4⁶·6¹⁸·8⁴). The 4‐(2,4‐dicarboxyphenoxy)phthalic acid (H₄dcppa) ligands are completely deprotonated and link {Co₄(COO)₄}^4? SBUs into two‐dimensional (2D) layers. Furthermore, adjacent layers are connected by 1,4‐bis(1H‐imidazol‐1‐yl)benzene (bib) ligands, giving rise to a 3D supramolecular architecture. Interestingly, there are numerous elliptical cavities in the CP where isolated unique discrete hexameric water clusters have been observed. The results of thermogravimetric and magnetic analyses are described in detail.     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.     

Magnetization reversal of Fe ultrathin film on Cu(100)

The magnetization reversal of Fe/Cu(100) ultrathin films grown at room temperature is investigated by using an in situ magneto-optical Kerr effect polarimeter with a magnet that can rotate in a plane of incidence. There occur spin reorientation transitions from out-of-plane to in-plane magnetizations in 8 and 12 monolayers (ML) thick iron films. The coercive fields are observed to be proportional to the reciprocal of the cosine with respect to the easy axis, suggesting that the domain-wall displacement plays a main role in the magnetization reversal process.     

MOSFET调制器的实验研究

 介绍了MOSFET调制器的基本原理，并对其并联分流和感应叠加两种开关结构进行了实验研究。基于可编辑逻辑器件设计了其触发电路，驱动电路采用高速MOSFET对管组成的推挽输出形式，加快了MOSFET的开关速度。利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真，结果表明，加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压。实验中，电流波形用Pearson线圈测量，用3个MOSFET并联作开关，当电容充电电压为450 V，负载为30 Ω时，脉冲电流13 A，前沿20 ns，平顶约80 ns；用3个单元调制器感应叠加，当电容充电电压为450 A，负载为30 Ω时，脉冲电流强度为40 A，前沿25 ns，平顶约70 ns。