Low‐bandgap donor–acceptor copolymers with 4,6‐bis(3′‐(2‐ethylhexyl)thien‐2′‐yl)thieno[3,4‐c][1,2,5]thiadiazole: synthesis,optical, electrochemical,and photovoltaic properties

Two new low‐bandgap alternating copolymers (CEHTF and CEHTP) consisting of 4,6‐bis(3′‐(2‐ethylhexyl)thien‐2′‐yl)thieno[3,4‐c][1,2,5] thiadiazole and 9,9‐bis(2‐ethylhexyl)fluorene or 2,5‐bis(isopentyloxy)benzene were synthesized by Suzuki coupling reaction of corresponding comonomers. Their optical, electrochemical, and photovoltaic (PV) properties were studied and are reported. Both the copolymers exhibited long‐wavelength absorption covering the whole visible spectral region, which is in CEHTP thin films extended up to near infrared region, ambipolar redox properties, and electrochromism. High‐electron affinities and low‐optical bandgap values, 1.37 and 1.15 eV, were determined for CEHTF and CEHTP, respectively. PV devices with bulk heterojunction made of blends of copolymers and fullerene derivative [6,6]‐phenyl‐C⁶¹‐butyric acid methyl ester ([60]PCBM) were prepared and characterized. Effects of intramolecular charge transfer strength and side‐chain nature and length on photophysical properties are discussed. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Thieno[3,4‐b]pyrazine‐based low bandgap photovoltaic copolymers: Turning the properties by different aza‐heteroaromatic donors

A new series of low‐bandgap copolymers based on electron‐accepting thieno[3,4‐b]pyrazine (TPZ) and different electron‐donating aza‐heteroaromatic units, such as carbazole (CZ), dithieno[3,2‐b:2′,3′‐d]pyrrole (TPR) and dithieno[3,2‐b:2′,3′‐e]pyridine (TPY), have been synthesized by Suzuki or Stille coupling polymerization. The resulting copolymers were characterized by NMR, elemental analysis, gel permeation chromatography, thermogravimetric analysis, and differential scanning calorimetry. UV–vis absorption and cyclic voltammetry measurements show that TPZ‐based copolymer with TPR has the best absorption due to the strongest intramolecular charge transfer effect and smallest bandgap. The basic electronic structure of D‐A model compounds of these copolymers were also studied by density functional theory (DFT) calculations. The conclusion of calculation agreed also well with the experimental results. The polymer solar cells (PSCs) based on these copolymers were fabricated with a typical structure of ITO/PEDOT:PSS/copolymer:PC₇₁BM/Ca/Al under the illumination of AM 1.5G, 100 mW cm^?2. The performance results showed that TPZ‐based copolymer with TPR donor segments showed highest efficiency of 1.55% due to enhanced short‐circuit current density. The present results indicate that good electronic, optical, and photovoltaic properties of TPZ‐based copolymers can be achieved by just fine‐tuning the structures of aza‐heteroaromatic donor segments for their application in PSCs. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Efficient anti-stokes signal generation through degenerate four wave mixing in an all solid photonic bandgap fiber

We reported the generation of visible red light through degenerate four wave mixing (FWM) in an all solid photonic bandgap fiber (PBGF), which was achieved by pumping the fiber with a 800 nm Ti:sapphire-based femtosecond pulse laser. At a fiber length of 30 m, a broadband anti-Stokes spectrum range from 620 nm to 740 nm was obtained at the highest pump power, the spectrum evolution as a function of pump power and propagation distance had been measured. Furthermore, the intensity-dependent parametric gain characteristic is also calculated, which accords well with the experimental results.     

Multilayer dielectric cylindrical mirrors based on omnidirectional reflection from a one-dimensional photonic crystal

A multilayer dielectric cylindrical mirror (MDCM) based on the one-dimensional omnidirectional reflection of a photonic crystal is presented. In this case, the refractive indices of the two materials are 1.6 (polystyrene) and 4.6 (tellurium), and the corresponding optimized thicknesses are 0.75a and 0.25a. A very high reflectance over a wide frequency range is observed. In this case, a is the lattice constant of the photonic crystal. In this band, the MDCM has good reflection and focal properties. Therefore, it is feasible to use the MDCM for integrated waveguide devices. As an example, an etched diffraction grating demultiplexer based on the MDCM is also proposed. Both the operational principle and design of the device are introduced. This provides a method for designing compact integrated waveguide devices.     

Comparison of steady and transient optical responses between a four-level Tripod system and a three-level Lambda system

We study and compare the steady and transient optical responses of a four-level system and a three-level system, which are dressed by two and three laser fields, respectively. In the three-level system, a transmissivity window (a reflectivity platform) may be induced on the probe resonance by a traveling-wave (standing-wave) coupling field. In the four-level system, both transmissivity window and reflectivity platform are remarkably modified when a traveling-wave driving field is applied on two-photon resonance with the probe, but change little when the traveling-wave driving field is largely two-photon detuned. This implies that the four-level system can be safely treated as a three-level one in certain frequency regions of interest. Transient behaviors of atomic coherence on the probe resonance are also examined in both three-level and four-level systems to further confirm this conclusion. Our new findings are beneficial to achieve a novel all-optical routing scheme by simultaneously creating a transmissivity window and a reflectivity platform on a single resonance, and may also be used to simplify theoretical treatments in the situations where numerical calculations are complicated and intractable in the presence of at least one standing-wave field.     

带隙法测定SiGe/Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si_1-xGe_x合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的. 关键词： SiGe合金 应变 带隙     

Numerical analysis of three-colour HgCdTe detectors

The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. It is shown that the performance of the detector is critically dependent on the barrier’s doping level and position in relation to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.     

pn结电容-电压法测量应变SiGe禁带宽度

利用应变SiGe/Si异质pn结电容-电压（C-V）特性确定SiGe禁带宽度的技术.该技术根据SiGe/Si异质pn结C-V实验曲线，计算出 pn结接触电势差，并得到SiGe/Si的价带偏移量和导带偏移量，进而求得SiGe禁带宽度.该技术测试方法简便，其过程物理意义清晰，既适用于分立的SiGe/Si异质pn结，也可直接分析SiGe/Si异质结器件中的SiGe 禁带宽度.实验结果与理论计算及其他相关文献报道的结果符合较好. 关键词： SiGe/Si 异质pn结 C-V 禁带宽度     

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.     

Beyond Donor–Acceptor (D–A) Approach: Structure–Optoelectronic Properties—Organic Photovoltaic Performance Correlation in New D–A1–D–A2 Low‐Bandgap Conjugated Polymers

Low‐bandgap near‐infrared polymers are usually synthesized using the common donor–acceptor (D–A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D–A₁–D–A₂ low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single‐component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D–A₁–D–A₂ polymers as the electron donor mixed with the fullerene derivative [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short‐circuit current densities (J _sc) of around 11 mA cm⁻², high fill factors up to 0.70, and high open‐circuit voltages (V _ocs) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll‐to‐roll large‐scale manufacturing processes.