一种计算稀土材料陷阱深度的新方法

表征陷阱材料的主要物理量是陷阱深度, 准确计算出陷阱深度对于研究陷阱材料具有重要的意义. 从能带模型出发, 利用速率方程分析了整个热释光过程, 提出了一种计算稀土材料陷阱深度的新方法, 替代以往利用单分子或双分子近似计算陷阱深度的方法. 以SrAl2O4：Eu^2＋, Dy^3＋及Sr4Al14O25：Eu^2＋, Dy^3＋材料为研究对象, 计算了陷阱深度. 研究表明, 这种计算方法能更准确、真实地描述其物理过程.     

钠硼硅酸盐玻璃分相及浸析的NMR研究

用多种ＮＭＲ方法，包括＾２９Ｓｉ、＾２３Ｎａ，＾１１Ｂ ＭａＳ及＾２９Ｓｉ ＣＰ／ＭＡＳ ＮＭＲ，研究了一定组成的ａ２Ｏ－Ｂ２Ｏ３－ＳｉＯ２三元体系玻璃在不同温度下分相处理２４小时及用酸浸析处理后的结构变化。结果表明，在低于分相上界临界温度的范围内，存在着一个温度转折点，低于这一温度时，受动力学因素影响，分相未达平衡态，温度愈低，距平衡态愈过，分相愈下完全。超过这一温度，分相可达平衡态，受热力学控     

Recoil spectrometry: Ion accelerator based elemental characterisation of surface layers

Recoil Spectrometry covers a group of techniques that are very similar to the well known Rutherford backscattering Spectrometry technique, but with the important difference that one measures the recoiling target atom rather than the projectile ion. This makes it possible to determine both the identity of the recoil and its depth of origin from its energy and velocity, using a suitable detector system. The incident ion is typically high-energy (30–100MeV)³⁵C1,⁸¹Br or¹²⁷I. Low concentrations of light elements such as C, O and N can be profiled in a heavy matrix such as Fe or GaAs. Here we present an overview of mass and energy dispersive recoil Spectrometry and illustrate its successful use in some typical applications.     

JD树脂刻蚀及涂层的XPS研究

ＪＤ光学树脂表面刻蚀过程的ＸＰＳ研究表明，引进树脂遥ＣＯＨ，Ｃ＝Ｏ，Ｃ－ＳＯ３Ｈ，ＣＯＯＨ等基因随刻蚀温度的提高或时间的延长而增加，对其相对含量进行了计算，固化后的耐磨涂层具有ＳｉＯ２结构，ＪＤ板材的最佳刻蚀条件为２０℃，２０ｍｉｎ。     

Quantitative surface analysis by Auger and x-ray photoelectron spectroscopy

Recent developments in quantitative surface analysis by Auger (AES) and x-ray photoelectron (XPS) spectroscopies are reviewed and problems relating to a more accurate quantitative interpretation of AES/XPS experimental data are discussed. Special attention is paid to consideration of elementary physical processes involved and influence of multiple scattering effects on signal line intensities. In particular, the major features of core-shell ionization by electron impact, Auger transitions and photoionization are considered qualitatively and rigorous approaches used to calculate the respective transition probabilities are analysed. It is shown that, in amorphous and polycrystalline targets, incoherent scattering of primary and signal Auger and photoelectrons can be described by solving analytically a kinetic equation with appropriate boundary conditions. The analytical results for the angular and energy distribution, the mean escape depth, and the escape probability as a function of depth of origin of signal electrons as well as that for the backscattering factor in AES are in good agreement with the corresponding Mote Carlo simulation data. Methods for inelastic background subtraction, surface composition determination and depth-profile reconstructions by angle-resolved AES/XPS are discussed. Examples of novel techniques based on x-ray induced photoemission are considered.     

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

The effect of low-energy ion bombardment on CD₄/O₂ and CF₃X (X=F, Cl, Br) plasma etching has been assessed by applying controlled rf bias voltages on polystyrene (PS) and polymethylmethacrylate (PMMA) samples. In both cases ion bombardment has been found to have a chemical effect. In the case of CF₄/O₂ discharges, ion bombardment has been found to change the relative etching efficiency of different mixtures. In the case of CF₃X plasmas, ion bombardment has been found to alter PMMA and PS etch rates in a different way. In particular, the ratios between CF₄ and CF₃X (X=Cl, Br) etch rates of PS have been found to decrease with increasing bias voltage. This effect has been tentatively attributed to an ion bombardment-induced enhancement of the reaction between the aromatic ring and halogen molecules formed in CF₃Cl and CF₃Br discharges.     

Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers

We have developed multiple short‐period delta layers as a reference material for SIMS ultra‐shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter‐deposited alternately, with a silicon spacer thickness of 1–5 nm. These delta‐doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady‐state value for 1000 eV oxygen ions. Copyright © 2003 John Wiley & Sons, Ltd.     

Oxygen diffusion in SrCe<Subscript>0.95</Subscript>Yb<Subscript>0.05</Subscript>O<Subscript>3−δ</Subscript>

¹⁸O/¹⁶O isotope exchange depth profiling (IEDP) combined with secondary ion mass spectrometry (SIMS) has been used to measure the oxygen tracer diffusivity of SrCe_0.95Yb_0.05O_3– between 800 °C and 500 °C at a nominal pressure of 200 mbar. The values of D* (oxygen tracer diffusion coefficient) and k (surface exchange coefficient) increase steadily with increasing temperature, and the activation energies are 1.13 eV and 0.96 eV, respectively. Oxygen ion conductivities have been calculated using the Nernst–Einstein equation. The transport number for oxide ions at 769 °C, the highest temperature studied, is only ~0.05. Moreover, SrCe_0.95Yb_0.05O_3– has been studied using impedance spectroscopy under dry O₂, wet O₂ and wet H₂ (N₂/10% H₂) atmospheres, over the range 850–300 °C. Above ~550 °C, SrCe_0.95Yb_0.05O_3– shows higher conductivity in dry O₂ than in wet O₂ or wet H₂; below that temperature the results obtained for the three atmospheres are comparable. Dry O₂ shows the highest activation energy (0.77 eV); the activation energies for wet O₂ and wet H₂ are identical (0.62 eV).Abbreviations HTPC high-temperature proton conductor - IEDP isotope exchange depth profiling - SIMS secondary ion mass spectrometryPresented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, 10–12 April 2003     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

XPS in‐depth composition study on commercial monocrystalline silicon solar cells

From large‐scale production, two monocrystalline silicon solar cells of different quality, i.e. I_SC = 3.0 A (good cell) and I_SC = 1.6 A (bad cell), have been studied by XPS combined with 4 keV Ar⁺ depth profiling. Depth profiling was carried out through the anti‐reflection coating (TiO₂), the passivation layer (SiO₂) and up into the phosphorus‐doped silicon bulk. At the solar cell surface the elemental composition is similar for both cells, although the bad one presents slightly more carbon, phosphorus and lead but less silver than the good one. During profiling, carbon and silver could be followed by XPS. It was found that the carbon content is distinguishably higher in the bad cell than in the good one. Furthermore, it was found that silver atoms have not diffused in the same way in both cells. Only the good cell presents silver atoms up into the silicon bulk. Copyright © 2003 John Wiley & Sons, Ltd.