Surface and bulk plasmon coupling observed in reflection electron energy loss spectra

Reflection electron energy loss spectra have been measured for a semiconductor and some metals (Si, Cu, Ag and Au). A novel procedure is presented to rigorously decompose the spectra into contributions corresponding to surface and volume excitations. The resulting distributions of energy losses in an individual surface loss are in good agreement with theory. In particular, the begrenzungs effect occurring at the boundary of a solid state plasma, i.e. the reduction of the intensity of bulk modes due to the coupling with surface modes, can be clearly observed in the retrieved energy loss distribution.     

固溶体半导体ZnS1-xTex(0≤x≤1)多晶薄膜的制备及特性研究

ZnS1-xTex是制作短波长光波段光电子器件和紫外探测器的理想材料。本文介绍了ZnS1-xTex多晶薄膜的真空蒸镀制备情况，并用原子力显微镜、X射线衍射仪、能量色散谱仪、紫外．可见分光光度计、荧光光谱分析仪等对制备的多晶薄膜的性质进行了测试和分析，发现该多晶薄膜保持了单晶薄膜的紫外吸收、光致发光等良好特性。     

Initial stages of MnAs/GaAs(0 0 1) epitaxy studied by RHEED azimuthal scans

We study the nucleation phase of molecular beam epitaxy of (hexagonal) MnAs on (cubic) GaAs (0 0 1) using reflection high-energy electron diffraction (RHEED) azimuthal scans. The nucleation proceeds from a non-reconstructed initial stage through randomly oriented small nuclei and two orientation stages to the final single-phase epitaxial orientation. The fascinatingly complex nucleation process contains elements of both Volmer-Weber and Stranski-Krastanov growth. The measurement demonstrates the potential of high-resolution RHEED techniques to assess details of the surface structure during epitaxy.     

1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响

 研究了1 MeV电子辐照对短波Hg_1-xCd_xTe光伏探测器的影响。通过测试电子辐照前后光伏探测器的响应光谱、信号、噪声、暗电流等性能参数，分析了电子辐照对Hg_xCdxTe光伏器件的影响机制。实验结果发现：电子辐照后器件响应光谱在短波处有变窄的趋势，但响应峰值波长和截止波长基本无变化；随着辐照剂量的增加，通过p-n结的暗电流有所增加，光伏器件的探测率有减小的趋势。     

Low temperature transport properties of thin SOI MOSFETs

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (t_SOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above 16.5 nm is 1.9 m²/V s. The set of devices with thinnest channel (t_SOI=10–15 nm) suggest that the peak mobility decreases with decreasing t_SOI.     

考虑液面波动和液体压缩时一侧受液作用悬臂梁的横振分析

本文分析一侧部分受有液体作用悬臂梁的横向自由振动，同时考虑了液面波动和液体可压缩性对悬臂梁自振特性的影响。利用一组广义三角级数的正交完备性，求得了悬臂梁与液体耦联振动的振型函数和频率方程的精确解析解，最后给出了几个数值算例。     

CAEP闪光X射线机的发展

闪光X射线机技术在中国工程物理研究院(下称CAEP)已有三十年的发展历史在爆轰物理学和y射线辐照效应研究中发挥了重要作用。本文总结了CAEP几种类型闪光X射线机的研制概况,阐述了高压脉冲技术、场发射技术、强流束聚焦等的研究进展,并介绍几种装置的主要技术参数。闪光X射线机是研究爆轰物理过程及其它高速瞬变过程的重要工具。国防科学技术研究中,大型闪光X射线机的研制具有很大的意义。文中对开拓强流电了束新的应用领域提出了展望。     

Steps, ledges and kinks on the surfaces of platinum nanoparticles of different shapes

Platinum nanoparticles with a high percentage of cubic-, tetrahedral- and octahedral-like shapes, respectively, have been synthesized by a shape-controlling technique that we developed recently [Ahmadi et al., Science 272 (June 1996) 1924]. High resolution transmission electron microscopy (HRTEM) is used here to directly image the atomic scale structures of the surfaces of these particles with different shapes. The truncated shapes of these particles are mainly defined by the {100}, {111}, and {110} facets, on which numerous atom-high surface steps, ledges and kinds have been observed. This atomic-scale fine structure of the surfaces of these particles is expected to play a critical role in their catalytic activity and selectivity.     

Experimental confirmation by galvanomagnetic methods of a complex transport model in In0.53Ga0.47As layers deposited by MBE on SI-InP

At low temperatures In_0.53Ga_0.47As samples show an increase of carrier concentration, which can be explained in terms of a two carriers transport model. This type of problem exists since the beginning of the semiconductor era, dating back to monocrystalline germanium.We propose that in all the investigated layers, there are X atoms or charged dislocations in the region of the first monolayers, which are built in during epitaxial growth. The layers were intentionally undoped. They form an impurity band in which low mobility carriers dominate over the localised electron scattering due to the s-d exchange interaction. These carriers do not freeze out at liquid helium temperature and give rise to two transport media for electrons; a conduction band at higher temperatures and an impurity band at lower temperatures. The electron which fall down onto the previously ionised X atoms, then move by thermally activated hopping. We show that the two carriers model for In_0.53Ga_0.47As epitaxial layers are confirmed by the carrier concentration-temperature, carrier concentration-magnetic field, resistivity-magnetic field behaviour, and also by YKA theory also. The differences between the two transport models are so distinctive that observed phenomena may exist. This paper presents experimental results, which constitute comprehensive evidence for the complicated structure of the semiconductor epitaxial layers on the sample of n-type In_0.53Ga_0.47As/InP layer with n=2.2×10¹⁵/cm³.     

Me-PTCDI thin film deposition on InSb(1 1 1)A

The evolution of N,N′-dimethylperylene-3,4,9,10-dicarboxyimide (Me-PTCDI) thin films formed by vapour deposition on InSb(1 1 1)A substrates has been studied by X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). XPS studies of the Me-PTCDI covered surface indicate that no significant interaction occurs at sub-monolayer coverage when compared to multilayer Me-PTCDI films. HREELS studies suggest only a weak interaction as evidenced by very small changes in the frequencies of several molecular vibrational modes. LEED patterns show the Me-PTCDI overlayer adopts a structure commensurate with the underlying InSb(1 1 1)A substrate surface and that can be rationalised by van der Waals intermolecular energy calculations for the Me-PTCDI unit cell. The results are consistent with a weak interaction at the Me-PTCDI/InSb interface, the formation of the commensurate structure being sufficient to overcome the small energetic penalty associated with deviation from the calculated intermolecular interaction energy minimum.