Low temperature transport properties of thin SOI MOSFETs |
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| Authors: | M Prunnila J Ahopelto F Gamiz |
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| Institution: | a VTT Information Technology, P.O. Box 1208, FIN-02044 VTT, Finland;b Departamento de Eletrónica y Tecnología de Computadores, Facultad de Ciencias, Avenida Fuentenueva s/n, 18071, Granada, Spain |
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| Abstract: | Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above 16.5 nm is 1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI. |
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| Keywords: | Silicon-on-insulator Electron mobility Quantum well |
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