| 1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响 |
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| 引用本文： | 黄杨程,乔辉,贾嘉,李向阳,龚海梅.1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响[J].强激光与粒子束,2005,17(1):25-28. |
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| 作者姓名： | 黄杨程 乔辉 贾嘉 李向阳 龚海梅 |
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| 作者单位： | 1. 上海技术物理研究所，传感技术国家重点实验室，上海 200083; 2. 中国科学院 研究生院, 北京 100039 |
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| 基金项目： | 上海市科学技术委员会部分资助课题(011661082,OIQA14045) |
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| 摘 要： | 研究了1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响。通过测试电子辐照前后光伏探测器的响应光谱、信号、噪声、暗电流等性能参数，分析了电子辐照对HgxCdxTe光伏器件的影响机制。实验结果发现：电子辐照后器件响应光谱在短波处有变窄的趋势，但响应峰值波长和截止波长基本无变化；随着辐照剂量的增加，通过p-n结的暗电流有所增加，光伏器件的探测率有减小的趋势。
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| 关 键 词： | 碲镉汞 光伏探测器 电子辐照 辐照效应 |
| 文章编号： | 1001-4322(2005)01-0025-04 |
| 收稿时间： | 2004/6/14 |
| 修稿时间： | 2004年6月14日 |
Influence of 1MeV electron irradiation on HgCdTe photovoltaic detectors |
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| HUANG Yang-cheng.Influence of 1MeV electron irradiation on HgCdTe photovoltaic detectors[J].High Power Laser and Particle Beams,2005,17(1):25-28. |
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| Authors: | HUANG Yang-cheng |
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| Institution: | 1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Shanghai 200083, China;2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | In this paper, radiation effects of 1 MeV electron on short wavelength Hg_(1-x)Cd_xTe photovoltaic detectors have been studied. Response spectrum, current-voltage characterization and detectivity were measured before and after irradiation to analyze the radiation effects. It's been observed that after irradiation, the response spectra of detectors become narrower at shot wavelength while the peak and cut-off wavelength have no noticeable change. The dark current of devices increases with the irradiation dosage increasing and the detectivity thus decreases. |
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| Keywords: | HgCdTe Photovoltaic detector Electron irradiation Radiation effect |
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