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61.
M. Kodu M. AintsT. Avarmaa V. DenksE. Feldbach R. JaanisoM. Kirm A. MaaroosJ. Raud 《Applied Surface Science》2011,257(12):5328-5331
Hydrogen doped MgO films were grown by pulsed laser deposition method. Gaseous hydrogen stored in cavities of milky MgO single crystal targets provided doping in film deposition process. Clear MgO targets without hydrogen were used in the preparation of reference films. The influence of hydrogen doping on firing voltage (FV) of gas discharge and its AC frequency dependence was investigated. According to thermoluminescence experiments, the films grown from milky targets contained two kinds of electron traps with the activation energies of 0.051 and 0.31 eV, while latter traps were absent in reference samples. The 0.31 eV trap was assigned to the hydride ion H− occupying an oxygen vacancy site in MgO crystal structure. Using standard gas mixture (Ne-10% Xe), FVs of hydrogen doped sample showed considerable frequency dependence and were up to 55 V lower in comparison to the reference sample. The FVs of reference sample were shifted 14-28 V to higher values when N2 gas was added to the mixture. The N2 addition lowered the FVs of hydrogen doped sample up to 38 V and almost eliminated the FV frequency dependence. 相似文献
62.
Barium ferrites substituted by Mn-Sn, Co-Sn, and Mn-Co-Sn with general formulae BaFe12−2xMnxSnxO19 (x=0.2-1.0), BaFe12−2xCoxSnxO19 (x=0.2-0.8), and BaFe12−2xCox/2Mnx/2SnxO19 (x=0.1-0.6), respectively, have been prepared by a previously reported co-precipitation method. The efficiency of the method was refined by lowering the reaction temperature and shortening the required reaction time, due to which crystallinity improved and the value of saturated magnetization increased as well. Low coercivity temperature coefficients, which are adjustable by doping, were achieved by Mn-Sn and Mn-Co-Sn doping. Synthesis efficiency and the effect of doping are discussed taking into account accumulated data concerning the synthesis and crystal structure of ferrites. 相似文献
63.
A high optical quality erbium doped Lu2SiO5 single crystal has been grown by the Czochralski method. The distribution coefficient of Er3+ was measured to be ∼0.926. The absorption and emission spectra as well as the fluorescence decay curve of the excited state 4I13/2 were measured at room temperature. The spectroscopic parameters were calculated using the Judd–Ofelt theory, and the J–O parameters Ω2, Ω4 and Ω6 were found to be 4.451×10-20, 1.614×10-20 and 1.158×10-20 cm2, respectively. The room-temperature fluorescence lifetime of the Er3+4I13/2→4I15/2 transition was measured to be 7.74 ms. The absorption and emission cross-section as well as the gain cross-section in the eye-safe regime of 1400–1700 nm were also determined and discussed. 相似文献
64.
Qinhua Wei Hongsheng Shi Xiaofeng Cheng Laishun Qin Guohao Ren Kangying Shu 《Journal of Crystal Growth》2010,312(11):1883-1885
The growth and scintillation properties of the Na2W2O7 crystal are reported. The solid reaction between Na2CO3 and WO3 is used to synthesise the Na2W2O7 material. The Na2W2O7 single crystal has been grown by the Bridgman method. And the Na2W2O7 single crystal with sizes 14×7×6 mm3 has been achieved. The transmission spectra, the Ultraviolet fluorescence spectra and the X-ray excited luminescence spectra of the Na2W2O7 crystal are measured. The measurement results show that the Na2W2O7 crystal is a promising intrinsic scintillator. 相似文献
65.
Toshinori Taishi Hideaki Ise Yu Murao Takayuki Osawa Masashi Suezawa Yuki Tokumoto Yutaka Ohno Keigo Hoshikawa Ichiro Yonenaga 《Journal of Crystal Growth》2010,312(19):2783-2787
Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B2O3) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm−1 in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid was about 1016 cm−3 and was almost the same as that in a Ge crystal grown without B2O3. Oxygen concentration in a Ge crystal was enhanced to be greater than 1017 cm−3 by growing a crystal from a melt fully covered with B2O3; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×1017 cm−3. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4. 相似文献
66.
Zhao Qian Feng Songlin Ning Dong Zhu Haijun Wang Zhiming Deng Yuanming 《Journal of Crystal Growth》1999,200(3-4)
In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. 相似文献
67.
68.
Both single- and multi-layer thin films of sol-gel-derived undoped and Al-doped zinc oxide material systems were fabricated for potential use in transparent conducting oxide modules. Functional properties of the resultant films were characterised comparatively. High degree of reproducibility was demonstrated for the characterised properties, with the exception of the electrical conductivity. Influences of Al doping on the characterised properties were also investigated. Al doping reduced the average crystallite size, and led to a denser and less porous morphology, and also caused an increase in transparency in the UV region. Moreover, it was shown that the electrical conductivity of this thin film system could be improved upon either the application of a forming gas process, or Al doping. 相似文献
69.
T. Suski E. Litwin-Staszewska P. Perlin P. Wisniewski H. Teisseyre I. Grzegory M. Bockowski S. Porowski K. Saarinen J. Nissil 《Journal of Crystal Growth》2001,230(3-4):368-371
Highly resistive GaN : Be was obtained by means of synthesis of Ga+Be with atomic nitrogen under high nitrogen pressure. Activation energy of resistivity is about 1.5 eV. This material exhibits features very different from those observed in highly resistive bulk GaN : Mg. Up to 300 K strong yellow band dominates photoluminescence spectrum in resistive GaN : Be crystals. Positron annihilation studies point to the presence of gallium vacancies, VGa. In highly resistive GaN:Mg neither yellow band with considerable intensity, nor detectable concentration of VGa was found. We also discuss the puzzling findings in highly resistive bulk GaN : Be of morphological features typical for highly conducting bulk n-GaN material. 相似文献
70.
分别掺有磷和硼的二氧化硅经γ辐照后产生多种顺磁性中心,ESR研究指出氧空穴O-主要稳定在杂质离子附近.O2-自由基稳定在Si离子上.F心的研究认为氧缺位俘获电子存在一个动态平衡过程. 相似文献