Electronic structure of graphene/Y2C heterostructure and related doping effect

Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y₂C) is investigated as one prospective material to dope graphene, using density functional theory calculations. In monolayer Y₂C, the anionic electrons localized away from Y atomic layers are confirmed to contribute to occupied states near the Fermi level. Next, we investigate the electronic structure of graphene in heterojunction with Y₂C. Anionic electrons of Y₂C occupy the empty states of graphene in graphene/Y₂C heterostructure, which makes the Dirac cone of graphene located at about 1.7 eV below the Fermi level. Such charge transfer of anionic electrons to graphene and the flatness of electric cloud of anionic electrons leads to evenly n-doped graphene in graphene/Y₂C heterostructure. This suggests that Y₂C is a good candidate to dope graphene.     

Improved charge transport and trap-state distribution in donor–acceptor-type semiconducting copolymer with a fluoropolymer dielectric film

This study presents a p-type doping method for donor–acceptor-type conjugated semiconducting copolymer-based field-effect transistors (FETs) with a fluoropolymer dielectric film. The polymeric FET, which initially comprises a non-polar polymer dielectric layer (poly (methyl methacrylate), PMMA), shows ambipolar behavior owing to the well-balanced electron-accepting and -donating properties of the cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PTz)-based conjugated polymer backbone system. However, when combined with an amorphous fluoropolymer (CYTOP) dielectric layer, the FET device exhibits that their ambipolar behavior remarkably changes to a high-performance p-type FET; the hole mobility enhanced by a factor of ~3 and the threshold voltage significantly shifted from −29 V to −12 V. The density of trap states in the CDT-PTz-based polymeric FETs with a CYTOP dielectric layer, which was estimated from the temperature-dependent transfer characteristics, was narrower and shallower than that of polymeric FETs with a PMMA dielectric layer. As such, it can be inferred that the deep-trap states are filled with additional doped charges from the surface polarization induced by the fluorinated dielectrics at the semiconductor-dielectric interface.     

IEF pattern classification‐derived criteria for the identification of epoetin‐δ in urine

Epoetin‐δ (Dynepo? Shire Pharmaceuticals, Basing stoke, UK) is a synthetic form of erythropoietin (EPO) whose resemblance with endogenous EPO makes it hard to identify using the classical identification criteria. Urine samples collected from six healthy volunteers treated with epoetin‐δ injections and from a control population were immuno‐purified and analyzed with the usual IEF method. On the basis of the EPO profiles integration, a linear multivariate model was computed for discriminant analysis. For each sample, a pattern classification algorithm returned a bands distribution and intensity score (bands intensity score) saying how representative this sample is of one of the two classes, positive or negative. Effort profiles were also integrated in the model. The method yielded a good sensitivity versus specificity relation and was used to determine the detection window of the molecule following multiple injections. The bands intensity score, which can be generalized to epoetin‐α and epoetin‐β, is proposed as an alternative criterion and a supplementary evidence for the identification of EPO abuse.     

High efficiency white luminescence of alumina doped ZnO

The application of alumina-doped ZnO (AZO) films as luminescent material for large area lighting sources has been evaluated. Thin films were grown on quartz using magnetron sputtering and subsequently annealed under argon atmosphere in a rapid thermal annealing experiment. Below 550 °C, red-shift of the optical band gap and increase of the visible emission are observed in agreement with Al diffusion and formation of interstitial oxygen atoms. At temperatures higher than 800 °C, diffusion is activated and Ostwald ripening leads to the formation of larger grains and an increase of the crystalline phase. The photoluminescence (PL) intensity is enhanced, specifically in the UV range. As a result the emission spectrum of AZO thin films can be adjusted by the annealing conditions, with equal contributions from the UV and orange parts of the PL spectrum resulting in an efficient white emission as quantified using the color space map of the Commission Internationale de l'Éclairage.     

AgGaS2- and Al-doped GaSe Crystals for IR Applications

We report a systematic study of AgGaS₂- and Al-doped GaSe crystals in comparison with pure GaSe and S-doped GaSe crystals. AgGaS₂-doped GaSe (GaSe:AgGaS₂) crystal was grown by Bridgman technique from the melt of GaSe:AgGaS₂ (10.6 wt.%). Its real composition was identified as GaSe:S (2 wt.%). Al-doped GaSe (GaSe:Al) crystals were grown from the melt of GaSe and 0.01, 0.05, 0.1, 0.5, 1, 2 mass % of aluminium. Al content in the grown crystals is too small to be measured. The hardness of GaSe:S (2 wt.%) crystal grown from the melt of GaSe:AgGaS₂ is 25% higher than that of GaSe:S (2 wt.%) crystal grown by a conventional S-doping technique and 1.5- to 1.9-times higher than that of pure GaSe. GaSe:Al crystals are characterized by 2.5- to 3-times higher hardness than that of pure GaSe and by extremely low conductivity of ≤ 10^− 7 Om^− 1 cm^− 1. A comparative experiment on SHG in AgGaS₂-, Al-, S-doped GaSe and pure GaSe is carried out under the pumps of 2.12-2.9 μm fs OPA and 9.2−10.8 μm ns CO₂ laser. It was found that GaSe:S crystals possess the best physical properties for mid-IR applications among these doped GaSe crystals. GaSe:Al crystals have relatively low conductivity which have strong potential for THz application.     

Crystal growth and dielectric, mechanical, electrical and ferroelectric characterization of n-bromo succinimide doped triglycine sulphate crystals

Single crystals of triglycine sulphate (TGS) doped with n-bromo succinimide (NBS) were grown at ambient temperature by the slow evaporation technique. An aqueous solution containing 1-20 mol% of n-bromo succinimide as dopant was used for the growth of NBSTGS crystals. The incorporation of NBS in TGS crystals has been qualitatively confirmed by FTIR spectral data. The effect of the dopant on morphology and crystal properties was investigated. The cell parameters of the doped crystal were determined by the powder X-ray diffraction technique. The dielectric constant of NBS doped TGS crystal was calculated along the ferroelectric direction over the temperature range of 30-60 °C. The dielectric constant of NBSTGS crystals decrease with the increase in NBS concentration and considerable shift in the phase transition temperature (T_C) towards the higher temperature observed. Pyroelectric studies on doped TGS were carried out to determine the pyroelectric coefficient. The emergence of internal bias field due to doping was studied by collecting P-E hysteresis data. Temperature dependence of DC conductivity of the doped crystals was studied and gradual increase in the conductivity with the increase of dopant concentration was observed. The activation energy (ΔE) calculated was found to be lower in both the ferroelectric and the paraelectric phases for doped crystals compared to that of pure TGS. The micro-hardness studies were carried out at room temperature on thin plates cut perpendicular to the b-axis. Less doped TGS crystals show higher hardness values compared to pure TGS. Piezoelectric measurements were also carried out on 010 plates of doped TGS crystals at room temperature.     

The effect of crystal lattice distortions on the electronic band structure and optical properties of the N,V- and N,Na-doped anatase

The crystal structure, energy band structure and optical absorption of the N,V-doped and N,Na-doped anatase are studied by means of the first-principle pseudo-potential plane wave and linear muffin-tin orbitals methods. We show that the nitrogen and vanadium atoms have a tendency to form covalently bonded pairs. The crystal lattice distortions associated with doping essentially affect the optical absorption. With doping the impurity bands emerge in the band gap of the host anatase, however, a noticeable increase of optical absorption takes place at the energy only above 3 eV. Possible impact of this effect on the photocatalytic activity of the doped anatase is outlined.     

Gd掺杂的多铁性陶瓷BiFeO3结构与磁性能研究

通过固相反应法制备了Bi1-xGdxFeO3多铁性陶瓷,XRD图谱表明,随着掺杂量的增大其由三角钙钛矿结构转变为正交钙钛矿结构,Raman图谱研究亦表明Gd掺杂可能引起了其结构的转变;且随着Gd掺杂量的增大,样品的矫顽力、剩磁与饱和磁化强度都大大提高,说明Bi1-xGdxFeO3陶瓷的铁磁性在不断增强,这可能是由于Gd...     

Fabrication of superhydrophobic polyaniline films with rapidly switchable wettability

A superhydrophobic polyaniline (PANI) film has been fabricated by using a facile one-step spraying method. The PANI was synthesized via in situ doping polymerization in the presence of perfluorooctanoic acid (PFOA) as the dopant. The water contact angle of this superhydrophobic surface reaches to 156°. Both the surface chemical compositions and morphological structures were analyzed. A granular morphology of PANI with a moderate amount of nanofibers was obtained. Moreover, a rapid surface wettability transition between superhydrophobicity and superhydrophilicity can be observed when it is doped with PFOA and de-doped with base. The mechanism for this tunable wettability has been discussed in detail.     

The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.