| γ辐照掺杂SiO2的ESR研究 |
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| 引用本文： | 刘雅言,詹瑞云.γ辐照掺杂SiO2的ESR研究[J].波谱学杂志,1989,6(1):35-40. |
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| 作者姓名： | 刘雅言 詹瑞云 |
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| 作者单位： | 中国科学院长春应用化学研究所 |
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| 摘 要： | 分别掺有磷和硼的二氧化硅经γ辐照后产生多种顺磁性中心,ESR研究指出氧空穴O-主要稳定在杂质离子附近.O2-自由基稳定在Si离子上.F心的研究认为氧缺位俘获电子存在一个动态平衡过程.
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| 关 键 词： | SiO2掺杂 γ辐照 ESR O-空穴中心 O2-自由基 F色心 |
| 收稿时间： | 1987-09-27 |
ESR STUDIES OF Γ-IRRADIATED SiO2 DOPED WITH IMPURITY IONS |
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| Liu Yayan Zhan Ruiyun,Qu Shuhua.ESR STUDIES OF Γ-IRRADIATED SiO2 DOPED WITH IMPURITY IONS[J].Chinese Journal of Magnetic Resonance,1989,6(1):35-40. |
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| Authors: | Liu Yayan Zhan Ruiyun Qu Shuhua |
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| Institution: | Changchun Institute of Applied Chemistry, Academia Sinica |
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| Abstract: | ESR method was used to study the properties of paramagnetic centers generated by y- irradiating silica gel containing respectively phosphorus and boron as impurity ions. Oxygen holes O- were found to be stablized close to impurity ions. In addition, O2- radical and F colour center signals were observed and investigated. A dynamic equilibrium process would exist during F centers formation. |
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| Keywords: | Doping SiO2 γ-irradiation ESR O2- radical O- hole center |
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