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141.
Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement
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The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top comers of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility. 相似文献
142.
Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors
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By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (l-V) characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. 相似文献
143.
Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis
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ZHANG Peng ZHAO Sheng-Lei XUE Jun-Shuai ZHANG Kai MA Xiao-Hua ZHANG Jin-Cheng HAO Yue 《中国物理快报》2014,(3):137-139
We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies and time constants are determined by frequency-dependent conductance measurements. A high trap density of up to 1.6×1014 cm?2eV?1 is observed, which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process. 相似文献
144.
WANG Chong HE Yun-Long DING Ning ZHENG Xue-Feng ZHANG Peng MA Xiao-Hua ZHANG Jin-Cheng HAO Yue 《中国物理快报》2014,(3):177-180
In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs), we report a feasible method of low density drain (LDD) HEMT. The fluoride-based plasma treatment using CF4 gas is performed on the drain-side of the gate edge. The channel two-dimensional electron gas (2DEG) concentrations are modulated by fluoride plasma treatment, and the peak electric field at the gate edge is effectively reduced, so the breakdown voltage is improved. The electric field distributions of the LDD-HEMTs are simulated using the Silvaco software, and the peak of the electric field on the gate edge is effectively reduced. Experimental results show that, compared with the conventional HEMT, LDD-HEMTs have a lower reverse leakage current of the gate, and the breakdown voltage is increased by 36%. The current collapse characteristics of the LDD-HEMTs are confirmed by dual-pulse measurement, and an obvious pulse current reduction is due to the surface states by implanting F ions between the gate and the drain. 相似文献
145.
Using the characteristic of small energy difference between two high Rydberg states, we theoretically investigate the carrier envelope phase (CEP) effect in a bound-bound transition of an atom in a low-frequency long laser pulse with tens of optical cycles. Particularly, we first prepare a Rydberg state of a hydrogen-like atom by a laser field with the resonant frequency between this state and the ground state. Then by using a low-frequency long laser pulse interacting with this Rydberg atom, we calculate the population of another Rydberg state nearby this Rydberg state at the end of the laser pulse and find that the population changes dramatically with the CEP of the low-frequency pulse. This CEP effect is attributed to the interference between the positive-frequency and negative-frequency components in one-photon transition. These results may provide a method to measure the CEP value of a long laser pulse with low frequency. 相似文献
146.
The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced in the N-face AIGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs. 相似文献
147.
Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer
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We investigate the phthalocyanine derivative organic field-effect transistors (OFETs) using a novel para - quaterphenyl (p-4p) as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type (copper phthalocyanine) and n-type (fluorinated copper phthaloeyanine) OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This re- markable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π - π stack direction parallel to the substrate. 相似文献
148.
149.
设计并制作了结构尺寸为毫米量级的AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器,采用数值分析的方法分析了器件传感区域长度与宽度比值及待测物调控二维电子气(2DEG)距离与感测信号之间的关系,给出了结构尺寸为毫米量级的AlGaN/GaN HEMT生物传感器的设计依据,以不同浓度的前列腺特异性抗原(PSA)为待测物,对制作的AlGaN/GaN HEMT生物传感器进行了初步测量,测试结果表明,在50 mV的电压下,毫米量级的AlGaN/GaN HEMT生物传感器的对PSA的探测极限低于0.1 pg/ml.实验表明毫米量级的AlGaN/GaN HEMT生物传感器具有灵敏度高,易于集成等优点,具备良好的应用前景. 相似文献
150.