基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

Optical spectroscopy studies on FeTelxSex and AxFe2uSe2 （A = K, Rb, Cs）： A brief overview

In this short overview, we summarize the optical spectroscopy FeTezxSex and AxFe2-ySe2. We elaborate that optical spectroscopy band structure evolution across the AFM phase transition temperature, studies on iron selenide superconducting systems measurements yield fruitful information about the the electronic correlation effect, the superconduct- ing pairing energy gap, the condensed carrier density or penetration depth, the inhomogeneity and the nanoscale phase separation between superconductivity and antiferromagnetism in those systems.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.     

C_(60)与MoO_3混合材料做空穴注入层的单层有机电致发光器件

我们制备研究了基于结构为氧化铟锡(ITO)/C_(60)(1.2nm):MoO_3(0.4nm)/1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBi):三(2-苯基吡啶)铱[Ir(ppy)_3](33%,90 nm)/LiF (0.7 nm)/Al (120 nm)的高效绿色磷光单层有机发光二极管(OLED)。分别将C_(60),MoO_3与C_(60):MoO_3混合物作为空穴注入层(HIL)作为对比。TPBi在发光层中起着主体以及电子传输材料的双重作用。在使用电子传输型主体的单层OLED中,空穴注入层性质对于调节电子/空穴注入以获得电荷载流子传输平衡起重要作用。因此,适当调节空穴注入层是实现高效单层OLED的关键因素。由于MoO_3较大的电子亲和能(6.37 eV)会诱导电子从C_(60)的最高占据分子轨道(HOMO)能级转移至MoO_3,从而形成C_(60)阳离子,并使得Mo元素的价态从+6降至+5,C_(60):MoO_3混合就可以较好的调节空穴注入性质。最终实现最大电流效率为35.88 cd·A~(-1)的单层有机发光器件。     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

自由空间量子通讯实验中纠缠源的研制

设计了适合自由空间量子通讯实验的纠缠源. 纠缠光子对的单模光纤搜集率约为每秒20000对,水平竖直方向的纠缠对比度大于95%,正负45°方向的纠缠对比度大于90%. 在本地得到了大于100个标准偏差的Bell 不等式破缺. 满足20 km量级的自由空间量子通讯试验要求. 关键词： 纠缠光子对 位相匹配 收集效率 贝尔不等式     

调制自由载流子吸收测量半导体载流子输运参数的三维理论

推导出用于测量半导体载流子输运特性(载流子寿命、载流子扩散系数和前表面复合速度)的调制自由载流子吸收(modulated free carrier absorption, MFCA)检测技术的三维理论模型,给出了调制自由载流子吸收检测信号与调制频率和抽运-探测光相对距离的关系.定性分析了在不同调制频率时各个载流子输运参数对径向位置扫描曲线(信号与两束光相对距离的关系)的影响,结果表明调制自由载流子吸收检测信号对各个参数的灵敏度随抽运-探测光相对距离的增加而增加.仿真和实验结果表明,通过拟合不同调制频率时调 关键词： 调制自由载流子吸收 载流子输运特性 径向位置扫描     

多注毫米波行波管收集极的热设计

 为解决多注毫米波行波管收集极的散热问题,保障行波管工作可靠性与稳定性,利用 ANSYS 有限元软件模拟分析了收集极的传热特性,针对性地调整和优化了收集极相关参数与结构。研究结果表明：接触热阻是造成收集极具有较高温升的一个重要因素,由接触热阻所造成的温升约占收集极内外温度差的1/3;并不是第二电极与磁环接触宽度越宽所对应的收集极散热能力就越强,而是在一定工作条件下其散热能力存在极限值;对于绝缘陶瓷材料,应根据绝缘陶瓷的温度特性以及行波管的功率大小来进行选择;翼片式散热器是一种符合设计要求的理想散热结构。