High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

The photoluminescence （PL） characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.     

Imprints of molecular orbitals using photoelectron angular distribution by strong laser pulses of circular polarization

We theoretically investigate the strong-field ionization of H+2 molecules in four different electronic states by calculating photoelectron angular distributions in circularly polarized fields. We find that the structure of photoelectron angular distribution depends on the molecular orbital as well as the energy of the photoelectron. The location of main lobes changes with the symmetric property of the molecular orbital. Generally, for molecules with bonding electronic states, the photoelectron's angular distribution shows a rotation of π/2 with respect to the molecular axis, while for molecules with antibonding electronic states, no rotation occurs. We use an interference scenario to interpret these phenomena. We also find that, due to the interference effect, a new pair of jets appears in the waist of the main lobes, and the main lobes or jets of the photoelectron's angular distribution are split into two parts if the photoelectron energy is sufficiently high.     

Shaping of few-cycle laser pulses via a subwavelength structure

We theoretically investigate the propagation of few-cycle laser pulses in resonant two-level dense media with a sub- wavelength structure, which is described by the full Maxwell-Bloch equations without the frame of slowly varying envelope and rotating wave approximations. The input pulses can be shaped into shorter ones with a single or less than one optical cycle. The effect of the parameters of the subwavelength structure and laser pulses is studied. Our study shows that the media with a subwavelength structure can significantly shape the few-cycle pulses into a subcycle pulse, even for the case of chirp pulses as input fields. This suggests that such subwavelength structures have potential application in the shaping of few-cycle laser pulses.     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

Multipacting analysis in micro-pulse electron gun

Modeling multipacting to steady state saturation is of interest in determining the performance of the micro-pulse electron gun. In this paper, a novel method is proposed to calculate the multipacting resonance param- eters for the gun. This method works well, and the 2-D simulation results suggest that steady state saturation can be achieved in the gun. After saturation the transition from two-surface multipacting to single-surface multipacting occurred, and an extensive range of electron emission time is a suggested way to avoid this kind of transition.     

具有n个小时滞脉冲系统的周期解

本文考虑有n个小时滞的脉冲系统,利用隐函数存在性定理证明了该系统时滞 充分小时,系统的周期解存在性,推广了已有的相关结论.     

一维p-Laplace二阶脉冲微分方程的奇异边值问题

脉冲现象作为一种瞬时突变现象,在现代科技各领域的实际问题中是普遍存在的.本文研究具有奇异边值的一维p-Laplace二阶微分方程在脉冲影响下的正解的存在性,介绍了解的一般性存在定理,并用A-A定理和不动点定理证明了一维p-Laplace二阶脉冲微分方程的奇异边值问题的正解存在性定理.     

飞秒激光脉冲作用下光学玻璃的色心和折射率变化

实验研究了近红外飞秒激光脉冲诱导重钡火石玻璃产生的色心、紫外透明和折射率变化,测量了样品在激光辐照前后的吸收光谱和折射率的变化.实验发现色心的产生伴随着折射率的改变,但色心漂白后,折射率的改变依然存在,表明色心与折射率改变的热稳定性不一致,意味着飞秒激光脉冲诱导玻璃折射率变化的机理与色心产生的机理不同.实验还观察到色心区域在紫外产生透明;色心漂白后,紫外透明消失的现象,并阐述了可能的机理和应用.     

Population transfer by femtosecond laser pulses in a ladder-type atomic system

The population transfer in a ladder-type atomic system driven by linearly polarized sech-shape femtosecond laser pulses is investigated by numerically solving Schr6dinger equation without including the rotating wave approximation （RWA）. It is shown that population transfer is mainly determined by the Rabi frequency （strength） of the driving laser field and the chirp rate, and that the ratio of the dipole moments and the pulse width also have a prominent effect on the population transfer. By choosing appropriate values of the above parameters, complete population transfer can be realized.