解吸附电晕束电离质谱法快速检测中成药及保健食品中非法添加的β-受体阻滞剂

建立了新型的解吸附电晕束离子源耦合离子阱质谱法(DCBI-MS),在无需复杂的样品前处理及色谱分离的条件下,可快速检测降血压中成药及保健食品中非法添加的7种β-受体阻滞剂阿替洛尔、比索洛尔、美托洛尔、普萘洛尔、盐酸塞利洛尔、盐酸贝凡洛尔和卡维地洛.采用一级质谱快速筛选和二级质谱确证的方法对目标化合物进行了定性和半定量测定.各目标物的检出限均低于0.1 mg/L,在0.5～100 mg/L浓度范围内线性关系良好.实验获得的7种β-受体阻滞剂的裂解规律为芳氧丙醇胺类化合物的质谱检测提供了参考依据.通过与高效液相色谱-电喷雾离子化质谱法(HPLC-ESI/MS)对比表明,DCBI-MS方法的检测结果可靠.对9种市售样品进行检测,有1批次中成药检出含有未标示的卡维地洛.结果表明,DCBI-MS法测定单个样品的时间不超过1 min,分析速度快,可以在大批量复杂基质样品中β-受体阻滞剂的筛查和药品品质的在线监测中发挥重要作用.     

离子液体辅助水热法合成六方WO3纳米棒束

提出了利用简单的离子液体1-甲基-3-乙基-咪唑溴辅助水热法合成六方WO₃纳米棒束的方法,对其结构进行了表征,并讨论其形成机理。TEM照片表明：WO₃纳米棒束由长200~300 nm、直径25~30 nm的纳米棒组装而成。离子液体1-甲基-3-乙基-咪唑溴在纳米棒的形成过程中起到了结构导向剂的作用。     

物理,给了我一双发现美的眼睛

物理学女博士生是什么样子的?上大学的时候,自己会有很多的幻想和憧憬,比如天天穿着实验服穿梭于各个实验室之间,探索着肉眼看不到的纳米世界或者浩瀚广阔的天体、宇宙,没准儿还可以发现一些新奇的现象并且给出科学的解释,就像科幻电影里的科学天才一般,浑身上下都散发着智慧之美。大概因为大学时候自己一直有着这样的愿望和想象,所以从大一到大三,我最常待着的地方     

高压直流断路器测控装置的设计与试验分析

直流输(配)电是目前电网发展的趋势,而高压直流断路器的研发是影响其发展的关键技术之一。测量与控制装置的研究是高压直流断路器的研发要点。采用高压电力电子器件,DSP+FPGA相结合的控制方式,对其测控装置进行研究分析,提出了区间阈值的控制方法及相应的控制时序,从高压直流输电、能源多样化的发展需求入手,将机械开关和固态开光相结合,设计了一套混合式高压直流断路器样机。通过对样机进行合分闸试验及故障分闸试验,证明了所研制的高压直流断路器样机具有分闸动作快,限弧能力强,动作一致性好等优点。     

多层介质膜偏振无关光栅的研制

介绍了一种应用于光纤激光光谱合束的高衍射效率多层介质膜偏振无关光栅的设计及制作,给出了设计参数、制作流程和最终制作的偏振无关光栅的测量结果,在1.044~1.084μm波长范围内,实验测得的TE偏振光、TM偏振光的平均衍射效率分别为89.7%,93.8%。     

Novel correction method for X-ray beam energy fluctuation of high energy DR system with a linear detector

A high energy digital radiography (DR) testing system has generated diverse scientific and technological interest in the field of industrial non-destructive testing. However, due to the limitations of manufacturing technology for accelerators, an energy fluctuation of the X-ray beam exists and leads to bright and dark streak artifacts in the DR image. Here we report the utilization of a new software-based method to correct the fluctuation artifacts. The correction method is performed using a high pass filtering operation to extract the high frequency information that reflects the X-ray beam energy fluctuation, and then subtracting it from the original image. Our experimental results show that this method is able to rule out the artifacts effectively and is readily implemented on a practical scanning system.     

线列光纤传像束对比度传递函数研究

宽视场成像光谱仪采用线列光纤束进行视场折叠以改进其性能.作为一种特殊的光学元件,线列光纤除了具有传像功能外,还具有离散采样特性,这需要采用新方法评价其成像性能.以对比度传递函数的定义为基础,推导出线列光纤束的对比度传递函数解析表达式,据此研究了线列光纤传像束对比度传递函数的特性.结果表明,在极其靠近Nyquist频率及...     

Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.