析氢反应动力学的交流阻抗法研究

利用交流阻抗法测定析氢电化学动力学参数，得到与极化曲线法一致的结果，为确定复杂析氢过程速率的决定步骤提供了判据。     

Nonlinear Dynamics Approach to the Correlation Analysis of Protein Sequences

To clarify the randomness of protein sequences,we make a detailed analysis of a set of typical protein sequences representing each fold by using the nonlinear prediction method developed in nonlinear dynamics theory.No deterministic structures are found in these protein sequences and this implies that they behave as random chains.We also explain the controversial results obtained in previous investigations.     

Quark Virtuality and QCD Vacuum Condensates

Based on the Dyson-Schwinger equations (DSEs) in the ‘rainbow‘ approximation, we investigate the quark virtuality in the vacuum state and quantum-chromodynamics (QCD) vacuum condensates. In particular, we calculate the local quark vacuum condensate and quark-gluon mixed condensates, and then the virtuality of quark. The calculated quark virtualities are λu,d^2 0.7 GeV^2 for u, d quarks, and λs^2=1.6 GeV^2 for s quark. Our theoretical predictions are consistent with empirical values used in QCD sum rules, and also fit to lattice QCD predictions.     

一类三参数混沌动力学系统模型及其在经济增长研究中的应用

从非线性自回归模型Xt+1=-αXtλ+1+βXt+γ出发,通过变量替换Xt=aYt,推出三参数混沌动力学系统模型Yt+1=kYt(1-Ytλ)+c;采用线性回归与非线性回归相结合的改进的混合法,对模型参数作了估计;实际研究表明,该模型可以用于对国内生产总值GDP增长的研究.     

聚甲醛结晶动力学研究

用解偏振光强法和差示扫描量热法（ＤＳＣ）分别研究了聚甲醛和聚甲醛助剂Ｐ的等温结晶动力学和非等温结晶动力学。探讨了助剂Ｐ对聚甲醛的结晶成核作用。     

上海光源储存环磁聚焦结构设计

上海光源是一台正在建设中的低发射度第三代同步辐射光源. 经过优化后, 储存环有两种直线节长度, 周长432m,在能量3.5GeV下束流发射度为3.9nm.rad, 直线节处的β函数和色散函数有足够的调节范围. 跟踪研究表明, 即使带上磁铁高阶场误差, 储存环仍有足够大的动力学孔径和能量接受度.     

Cauchy-Born Rule and the Stability of Crystalline Solids： Dynamic Problems

We study continuum and atomistic models for the elastodynamics of crystalline solids at zerotemperature.We establish sharp criterion for the regime of validity of the nonlinear elastic wave equationsderived from the well-known Cauchy-Born rule.     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制