双稳态压电俘能器的簇发振荡与俘能效率分析

本文从理论上分析了双稳态压电俘能器在高频激励下的动力学行为和低频激励下的簇发振荡, 旨在为系统找到多条高能轨道从而提高俘能效率. 首先, 介绍了双稳态压电俘能器的结构以及一般模型. 与工程上研究俘能器的目的不同, 本文主要从动力学方面分析了俘能器的运动, 电压输出与效率, 包括高频激励下系统的低能阱内周期运动、阱间混沌运动等, 并说明了单个低频激励下双稳态压电俘能器会在阱间高能轨道上发生簇发振荡, 但在阱内低能轨道上只做周期运动. 同时, 结合振幅以及势阱深度等因素对簇发振荡的存在性和强度进行分析. 为了说明高能轨道与低能轨道对系统俘能效率的影响, 讨论了不同的等效阻尼、负载电阻下俘能器输出电压的变化, 找到了最优匹配. 最后, 对于多个低频外激励的情况, 从不同的轨道组合模式上得到了双高能簇发振荡模式输出的电压最大, 其次是单高能簇发振荡与单低能周期振荡的组合模式, 输出电压最低的是双低能周期振荡模式. 并与单个外激励进行对比, 表现了多个激励的良好性能.      

杆件在横向力和轴向压力共同作用下的内力计算

针对杆件在横向力和轴向压力共同作用下的内力计算问题进行了研究．在考虑杆件变形因素的情形下,推导出了杆件在横向力和轴向压力共同作用下的内力和正应力的计算公式,并与材料力学中未考虑杆件变形因素的对应公式进行了比较,说明了二者之间不同之处．     

谐波齿轮系统的快慢振荡机制研究

谐波齿轮减速器是一种新型的传动装置, 因其具有诸多的优点, 因而得到了广泛应用. 谐波齿轮减速器涉及不同振荡尺度之间的耦合作用, 这通常会诱发复杂的快慢振荡, 严重影响了谐波齿轮系统的正常工作. 本文考虑涉及扭转刚度非线性因素的谐波齿轮系统, 旨在研究系统的快慢动力学, 揭示新型的快慢振荡机制. 首先, 构建了非线性扭转刚度下的谐波齿轮系统的快慢动力学模型. 然后, 通过改变扭转刚度系数, 得到了系统从常规振荡向快慢振荡的转迁过程. 接着, 简要地论述了有关快慢系统的基础理论. 在此基础上, 采用快慢分析法研究了快子系统的动力学特性, 揭示了快慢振荡的产生机制. 研究表明, 当系统参数改变时, 快子系统的平衡点曲线并未发生失稳或分岔; 然而, 在某一点附近, 平衡点曲线能够产生急剧量变, 其特征是平衡点在局部小范围内可以在正坐标值与负坐标值之间快速转迁. 在此基础上, 揭示了一种诱发快慢振荡的新型动力学机制, 比较了这种诱发机制与其他相关机制之间的区别. 本文丰富了系统通向快慢振荡的路径, 为实际谐波齿轮传动系统中的快慢振荡机理与控制研究提供参考.      

基于涡量矩理论的绕振荡水翼涡动力学分析

文章采用标准k-ω SST湍流模型和动网格技术, 实现了绕俯仰振荡NACA66水翼非定常流动结构与水动力特性的数值模拟, 并基于有限域涡量矩理论定量表征了局部旋涡结构对水翼动力特性的影响. 研究结果表明: 在水翼升程阶段, 当攻角较小时, 层流向湍流的转捩点由水翼尾缘向前缘移动; 在较大攻角时, 顺时针尾缘涡?TEV在水翼吸力面上生成并向前缘发展, 同时与吸力面上的顺时针前缘涡?LEV融合发展为附着在整个吸力面上的新前缘涡?LEV, 新的?LEV与逆时针尾缘涡+TEV相互作用直至完全脱落, 直接导致了水翼的动力失速, 在回程阶段, 绕振荡水翼的流场结构逐渐由湍流转变为层流. 基于有限域涡量矩理论的定量分析发现, 有限域内附着的?LEV和?TEV提供正升力, 当?LEV发展覆盖整个吸力面时对升力的贡献最大, 占总升力近50%, 而+TEV提供负升力. 同时发现, 有限域内各旋涡内部的不同区域提供的升力有正有负; 而逸出有限域的旋涡内部不同区域提供的升力方向均保持一致, 其中顺时针涡提供正升力, 而逆时针涡提供负升力. 在失速阶段, 域外旋涡整体对升力贡献较小且存在小幅波动, 体现了流动的非定常性.      

LOCAL BENDING OF THIN FILM ON VISCOUS LAYER

Effects of deposition layer position film are systematically investigated. Because the and number/density on local bending of a thin deposition layer interacts with the thin film at the interface and there is an offset between the thin film neutral surface and the interface, the deposition layer generates not only axial stress but also bending moment. The bending moment induces an instant out-of-plane deflection of the thin film, which may or may not cause the socalled local bending. The deposition layer is modeled as a local stressor, whose location and density are demonstrated to be vital to the occurrence of local bending. The thin film rests on a viscous layer, which is governed by the Navier-Stokes equation and behaves like an elastic foundation to exert transverse forces on the thin film. The unknown feature of the axial constraint force makes the governing equation highly nonlinear even for the small deflection chse. The constraint force and film transverse deflection are solved iteratively through the governing equation and the displacement constraint equation of immovable edges. This research shows that in some special cases, the deposition density increase does not necessarily reduce the local bending. By comparing the thin film deflections of different deposition numbers and positions, we also present the guideline of strengthening or suppressing the local bending.     

High-Current Multi-Finger Mesa InGaAs/InP DHBTs

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.     

Dynamical Effect of Calcium Pump on Cytosolic Calcium Bursting Oscillations with IP3 Degradation

Taking account of the Ca2＋-activated degradation of inositol trisphosphate （IP3）, a one pool model of cytosolic calcium oscillation is considered to investigate the effect of the calcium pump on the Ca2＋ bursting oscillation behavior. In order to give the oscillation domain, a two-parameter bifurcation analysis of the fast subsystem is performed in the parameter plane. Different types of bursting are presented with the variation of the pump parameter, and fast-slow dynamics is used to analyze the types and generation mechanisms of the bursting oscillations. The results are instructive for understanding the role of the calcium pump played in complex intracellular calcium activities.     

Ocean internal waves interpreted as oscillation travelling waves in consideration of ocean dissipation

Most studies of the synthetic aperture radar remote sensing of ocean internal waves are based on the solitary wave solutions of the Korteweg-de Vries （KdV） equation, and the dissipative term in the KdV equation is not taken into account. However, the dissipative term is very important, both in the synthetic aperture radar images and in ocean models. In this paper, the traveling-wave structure to characterize the ocean internal wave phenomenon is modeled, the results of numerical experiments are advanced, and a theoretical hypothesis of the traveling wave to retrieve the ocean internal wave parameters in the synthetic aperture radar images is introduced.     

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.