电学典型题错解剖析

1 物理概念理解不清 [例1](2008年山东潍坊)将标有"220 V,15 W"的甲灯和"220 V,60 W"的乙灯串联后接在220 V的电源上,组成闭合回路(设灯丝电阻不变)则下列判断正确的是     

High-Current Multi-Finger Mesa InGaAs/InP DHBTs

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.     

A narrow-linewidth continuous wave Ho：YAL03 laser with Fabry-Perot etalons

A narrow linewidth continuous wave Ho：YAP laser with two Fabry-Perot etalons pumped by a Tm：YLF laser is reported. The maximum output power reaches 8.3 W when the incident pump power is 15.8 W, with 52.5% optical-to- optical conversion efficiency and 62.6% slope efficiency. A stable laser output at 2118.1 nm is achieved, with a linewidth less than 0.4 nm （full width at half maximum）. The beam quality factor is M2- 1.25, measured by the traveling knife-edge method.     

Numerical simulation of end-pumped CW Nd^3＋：GdVO4 laser at 1063 nm

A theoretical model to simulate an end-pumped CW Nd^3＋：GdVO4 laser at 1063 nm is presented. Its essence is to use the propagation equations to demonstrate the spatial evolutions of the pump and the laser powers in the cavity, hence it is applicable to both low and high gain lasers. The simulation results obtained by this model are in good agreement with the experimental observations reported in the literature for a Ti：sapphlre-pumped Nd^3＋：GdVO4 laser. Moreover, some parameters, such as the reflectivity of output coupler, the spot size of laser beam and the crystal length, are discussed with a view to optimizing the laser performance.     

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.     

双折射吸收非线性介质薄膜中倍频的产生

从二次谐波电场满足的波动方程出发，考虑到介质对二次谐波的吸收以及把完全边界条件应用于基频波和二次谐波在介质的入射面和出射面之间的反射效应，推导出了单光轴非线性薄膜介质中的二次谐波输出功率的计算式.结果表明：当采用复折射率的概念时，可以把非线性无吸收介质的二次谐波输出功率计算式应用到非线性吸收介质二次谐波输出功率计算式中去.     

上海光源150MeV电子直线加速器的设计与调试

上海光源150MeV直线加速器由热阴极电子枪,次谐波聚束器和聚束器,四根S波段等梯度行波加速管及必要的磁铁等组成.外围还有由从微波到直流的电源和功率源,性能监测和联锁控制的硬件和软件等.概述了150MeV直线加速器的设计,安装,调试和达到的结果.     

非Kolmogorov大气湍流温度谱标度指数的测量与分析

 阐述了非Kolmogorov湍流谱理论以及湍流谱标度指数的测量与计算方法。在近地面多个地点对大气湍流温度起伏进行了多次的实验观测，结果表明：实际大气湍流温度谱标度指数多数不等于-5/3，并且通常在-2到-1之间变化。分析了湍流温度谱标度指数与湍流发展程度的相关性，利用小波分析方法展现了不同湍流强度下湍流温度脉动能量在各尺度之间的分配状态，发现湍流温度谱标度指数的绝对值在一定程度上随湍流强度的增加而增大。     

一种基于热离子二极管的大功率微波探测器

 主要给出了波导型的X波段大功率微波探测器的结构、标定方法和标定结果。该新型大功率微波探测器具有承受微波峰值功率高（可达100 kW），时间响应快（响应时间小于2.0 ns），不需要同步信号，抗干扰能力强等特点。根据不同的需要，可以制作成波导型和同轴型的大功率微波探测器。波导型探测器由热离子二极管、标准波导、滤波器和外电路组成，其工作频率范围为波导的工作频率范围；而同轴型探测器由热离子二极管、同轴波导，滤波器和外电路组成，可以宽带使用。标定结果表明该探测器很适合高功率微波峰值功率测量，尤其是在强电磁干扰环境和高重频微波脉冲条件下的测量，为解决功率测量不准的技术难题提供一种有效的技术手段。