离子敏感场效应晶体管及其应用

离子敏感场效应晶体管具有若干不同于寻常传感器的特点：超小型、全固态、集成化和自身阻抗变换等。它是一种很有发展前途的传感器。本文了讨论了离子敏感场效应晶体管的分类、结构和性能；评述了１９８９年以来其在临床医学和流动注射分析等方面的应用。引参考文献６７篇。     

半导体的化学刻蚀

半导体的化学刻蚀，俗称湿法刻蚀，它是半导体器件制作中的一个重要工艺，按照化学作用的原理，它可分为化学反应刻蚀、电化学刻蚀和光电化学刻蚀，半导体的化学刻蚀是在众多刻蚀方法中最基本和最终不能全部被取代的一种方法，它在高新技术中有着各种挂用途，如选择准刻蚀、各向异性刻蚀和计算机控制无掩模刻蚀等。     

纳米多孔双金属氧化物在镍钛合金纤维上的原位生长及其对多环芳烃的选择性固相微萃取

采用阳极氧化法在镍钛合金(NiTi)纤维上原位生长了双金属氧化物纳米孔(NiTiONPs)涂层,通过扫描电镜(SEM)和能谱(EDS)考察了电解质组成和电压对形貌的影响。将NiTiONPs涂层的NiTi纤维与高效液相色谱-紫外检测器联用,研究了4种典型芳香分析物的萃取性能。结果表明,富含TiO2的NiTiONPs涂层对多环芳烃(PAHs)具有良好的萃取效率,尤其对苯并[a]芘的萃取选择性优于市售聚二甲基硅氧烷纤维和聚丙烯酸酯纤维。在优化条件下,PAHs的线性范围为0.05~200μg/L,相关系数均大于0.999,检出限为0.012~0.134μg/L。对单支纤维日内和日间分析的相对标准偏差(RSDs)分别为4.0%~5.5%和6.0%~6.8%,使用分批组装的5支纤维分析的RSDs为6.4%~7.6%。实际水样分析的加标回收率为84.5%~111.5%。所制备NiTi纤维至少可重复使用250次以上,重现性好。     

声表面波器件用〈110〉取向ZnO薄膜的MOCVD生长

Zn O是具有纤锌矿晶体结构的多功能半导体材料 ,它具有 3 .3 7e V的禁带宽度和高达 60 me V的激子束缚能 ,是很有希望的紫外发光材料 .由于具有 c轴的择优取向性 ,因此目前人们的注意力主要集中在对 c轴取向 Zn O薄膜的特性研究上 [1～ 3] .但其它取向的 Zn O薄膜也可在某些衬底的特定面上 ,通过特定的条件进行生长 ,如〈1 1 0〉取向的 Zn O薄膜可在特定的条件下生长在蓝宝石 R面衬底上[4～ 7] .由于 (1 1 0 )面的 Zn O薄膜具有一些 c轴取向薄膜所不具备或无法比拟的特性 ,如 :机电耦合系数高达6% (C面薄膜的机电耦合系数却不足 1 % )…     

Formation of SnO2 Nanoparticles on External Surface of NaY Zeolite

Tin dioxide nanoparticles of 5 nm in size were prepared on NaY zeolite external surface by impregnation of SnCl2 solution and subsequent calcination at 623 K. A SnO2-NaY based chemical sensor for detecting H2 was demonstrated.     

Synthesis and Characterization of Fluoro- and Chloro- bimetallic Alkoxides as Precursors for Luminescent Metal Oxide Materials via Sol-Gel Technique

Heterobimetallic alkoxides are broadly recognized as versatile precursors for luminescence materials, and efforts are being made to develop novel routes by applying the concept of geometrical molecular design, for their synthesis and to design a single source precursor suited to photoluminescent materials. Novel and new series of bimetallic alkoxides has been prepared by metathesis route. They exhibit a lower sensitivity towards hydrolysis and so they are easier to handle as compared to other alkoxides. All the compounds were characterized by elemental analysis, FT-IR and multinuclear NMR spectroscopies. FT-IR revealed that the molecular structure of these metal alkoxides was retained to a large extent in 4 ： 1 halogenated alcohol-benzene solution. The heteronuclear NMR spectroscopy provided useful information about chemical shifts for better understanding the likely structure based on interactions with their coordinate metals. The mass spectra show similar types of fragmentation pattern. SEM-EDS analyses showed consistency with the formulation. XRD patterns show an enhanced homogeneity at high temperature. TGA measurements show that thermal decomposition occured in steps that depended entirely on the chemical compositions and the synthesis routes. SEM observation reveals that the morphology and particle size strongly depend on synthesis routes for their precursors.     

金属有机导体、半导体和超导体

本文综述了三类金属有机固体化合物的合成、结构与导电性能。这三类化合物是金属有机电荷转移盐,金属酞菁和会属卟啉络合物,以及金属有机夹层化合物。     

甲苯类化合物的选择性氧化

综述了以O2为清洁氧源甲苯类化合物的气相和液相选择性氧化.甲苯类化合物的气相选择性氧化中主要介绍了金属氧化物、分子筛和负载型催化剂并对影响催化剂活性和选择性的因素进行了分析;甲苯类化合物的液相选择性氧化中重点介绍了MC (mid-century)催化体系及其反应机理方面的研究进展,并特别介绍了仿生催化在甲苯类化合物催化氧化中的应用.对各催化氧化体系的应用前景进行了展望.     

一个求解广义圆锥互补问题的无导数光滑算法

本文研究了一个求解广义圆锥互补问题的无导数光滑算法.利用光滑函数将广义圆锥互补问题等价转化成一个光滑方程组,然后再利用牛顿法求解此方程组.该算法采用了一种新的非单调无导数线搜索技术,并且在适当条件下具有全局和局部二次收敛性质.数值实验结果表明算法是非常有效的.     

CARRIER PHOTOGENERATION IN POLY（N-VINYL-CARBAZOLE）-BASED PHOTOCONDUCTIVE THIN-FILM DEVICES

In this paper, photoexcitation processes in the bilayer devices based on inorganic materials and poly（N-vinylcarbazole） （PVK） were investigated. In order to clarify the roles of inorganic materials in photoconductive properties of bilayer devices, TiO2 and ZnS were chosen to combine with PVK. A model for generation of photocurrent （Iph） in single layer device of PVK was obtained. It is deduced that the recombination rate constant （Pcomb） and the ionization rate constant （y） ofexcitons should be considered as the most important factors for Iph. For inorganic materials （TiO2 or ZnS）/PVK bilayer devices, in reverse bias of-4 V, the photocurrent of 115 mA/cm^2 in the TiO2/PVK device was observed, but the photocurrent in the ZnS/PVK device was only 10 mA/cma under the illumination light of 340 nm and the light intensity of 14.2 mW/cm^2. The weaker photocurrent is attributed to the absorption of ZnS within UV region and the energy offset at the interface between PVK and ZnS, which impedes the transport of charge carriers.