Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.     

Relativistic version of Landau theory of Fermi liquid in presence of strong quantizing magnetic field—an exact formalism

An exact formalism for the relativistic version of Landau theory of Fermi liquid in presence of strong quantizing magnetic field is developed. Both direct and exchange type interactions with scalar and vector coupling cases are considered.     

Effective stability for generalized Hamiltonian systems

An effective stability result for generalized Hamiltonian systems is obtained by applying the simultaneous approximation technique due to Lochak. Among these systems, dimensions of action variables and angle variables might be distinct.     

General expressions of peaked traveling wave solutions of CH-γ and CH equations

We use qualitative analysis and numerical simulation to study peaked traveling wave solutions of CH-γ and CH equations. General expressions of peakon and periodic cusp wave solutions are obtained. Some previous results become our special cases.     

Large scale petroleum reservoir simulation and parallel preconditioning algorithms research

Solving large scale linear systems efficiently plays an important role in a petroleum reservoir simulator, and the key part is how to choose an effective parallel preconditioner. Properly choosing a good preconditioner has been beyond the pure algebraic field. An integrated preconditioner should include such components as physical background, characteristics of PDE mathematical model, nonlinear solving method, linear     

Electron-phonon interaction in tetrahedral semiconductors

Considerable progress has been made in recent years in the field of ab initio calculations of electronic band structures of semiconductors and insulators. The one-electron states (and the concomitant two-particle excitations) have been obtained without adjustable parameters, with a high degree of reliability. Also, more recently, the electron-hole excitation frequencies responsible for optical spectra have been calculated. These calculations, however, are performed with the constituent atoms fixed in their crystallographic positions and thus neglect the effects of the lattice vibrations (i.e. electron-phonon interaction) which can be rather large, even larger than the error bars assumed for ab initio calculations.Effects of electron-phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a given atom are available at affordable prices. In crystals composed of different atoms, the effect of the vibration of each separate atom can thus be investigated by isotopic substitution. Because of the zero-point vibrations, such effects are present even at zero temperature (T=0).In this paper, we discuss state-of-the-art calculations of the dielectric function spectra and compare them with experimental results, with emphasis on the differences introduced by the electron-phonon interaction. The temperature dependence of various optical parameters will be described by means of one or two (in a few cases three) Einstein oscillators, except at the lowest temperatures where the T⁴ law (contrary to the Varshni T² result) will be shown to apply. Increasing an isotopic mass increases the energy gaps, except in the case of monovalent Cu (e.g. CuCl) and possibly Ag (e.g. AgGaS₂). It will be shown that the gaps of tetrahedral materials containing an element of the first row of the periodic table (C,N,O) are strongly affected by the electron-phonon interaction. It will be conjectured that this effect is related to the superconductivity recently observed in heavily boron-doped carbon.     

The g-values of defects in hydrogenated microcrystalline silicon

The anisotropic g-values of defects in hydrogenated microcrystalline silicon prepared by hot-wire chemical vapour deposition have been measured as a function of crystalline volume fraction at room temperature. The defect has been identified as a silicon-dangling bond existing on the surface of crystalline grain. Their anisotropic g-values are discussed in the light of theoretical calculations by Ishii et al. and Ishii and Shimizu. The defect density is also discussed as a function of crystalline volume fraction.     

The dynamics of excitons and trions in resonant tunneling diodes

The aim of this work is to study the dynamic formation and dissociation of trions and excitons in double barrier resonant tunneling diodes. We propose a system of rate equations that takes into account the formation, dissociation and annihilation of these complexes inside the quantum well. From the solutions of the coupled equations, we are able to study the modulation of excitons and trions formation in the device as a function of the applied bias. The results of our model agree qualitatively with the experiments showing the viability of these rate equations system to study the dynamics of complex systems.     

Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique

Bi_3.99Ti_2.97V_0.03O₁₂ (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (P_r) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2P_r of 42 μC cm⁻², which is the largest for BTV thin films among the values reported so far.     

Closed-form solutions for a rectangular layer with central crack under anti-plane shear stress

We consider the problem of determining the stress distributionin a finite rectangular elastic layer containing a Griffithcrack which is opened by internal shear stress acting alongthe length of the crack. The mode III crack is assumed to belocated in the middle plane of the rectangular layer. The followingtwo problems are considered: (A) the central crack is perpendicularto the two fixed lateral surfaces and parallel to the othertwo stress-free surfaces; (B) all the lateral surfaces of therectangular layer are clamped and the central crack is parallelto the two lateral surfaces. By using Fourier transformations,we reduce the solution of each problem to the solution of dualintegral equations with sine kernels and a weight function whichare solved exactly. Finally, we derive closed-form expressionsfor the stress intensity factor at the tip of the crack andthe numerical values for the stress intensity factor at theedges of the cracks are presented in the form of tables.