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Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method |
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| Authors: | R Bairava Ganesh Hitoshi Matsuo Takahiro Kawamura Yoshihiro Kangawa Koji Arafune Yoshio Ohshita Masafumi Yamaguchi Koichi Kakimoto |
| Institution: | aGraduate School of Engineering, Kyushu University, 6-1, Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan bCrystal Growth Centre, Anna University, Chennai 600 025, India cResearch Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan dToyota Technological Institute, 2-12-1, Hisakata, Tempaku-ku, Nagoya 468-8511, Japan |
| Abstract: | Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis. |
| Keywords: | A1 Directional solidification A1 Impurities A2 Accelerated crucible rotation technique B3 Solar cells |
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