Frame Wavelets with Compact Supports for L^2（R^n）

The construction of frame wavelets with compact supports is a meaningful problem in wavelet analysis. In particular, it is a hard work to construct the frame wavelets with explicit analytic forms. For a given n × n real expansive matrix A, the frame-sets with respect to A are a family of sets in R^n. Based on the frame-sets, a class of high-dimensional frame wavelets with analytic forms are constructed, which can be non-bandlimited, or even compactly supported. As an application, the construction is illustrated by several examples, in which some new frame wavelets with compact supports are constructed. Moreover, since the main result of this paper is about general dilation matrices, in the examples we present a family of frame wavelets associated with some non-integer dilation matrices that is meaningful in computational geometry.     

Carleson测度与Bloch的刻画

在文中，对于C^n中有界强拟凸域。我们得到Carleson测度，消没Carleson测度的刻画。利用Carleson测度，我们还得到Bloch，小Bloch的刻画。     

经济增长影响因素实证研究

本文将人力资本作为生产要素之—,运用误差校正模型,估计出中国1952-1998年期间扩展的索洛模型。研究结果表明,物质资本存量的增长仍然是经济增长的主要因素,教育对经济增长有显著作用但贡献率不高(12.00%),劳动对经济增长的作用十分有限,三种投入要素对经济增长的总贡献仅占69.11%,其余应归功于包括技术进步在内的综合要素。     

Solutions for a Mode Ⅲ Growing Crack in a Piezoelectric Plane Under Two Kinds of Electric Boundary Conditions ＊

The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.     

不对称五氮齿扩展卟啉配合物的激发态性能研究

研究了不对称五氮齿扩展叶啉配合物的激发态性能.结果表明:随苯环上取代基变化,其发射光谱出现在770～820 nm的近红外区域,荧光量子产率小于0.02,寿命小于(?)ns.最低激发单重态能量、荧光量子产率分别和对位取代的 Hammett常数及亲电取代的Hammett常数存在很好的线性关系.激发三重态的能量为123kJ/mol左右,T_1～T_n吸收峰值出现在460～490nm区域,三重态寿命在几十微秒量级,敏化产生单重态氧的量子产率可高达0.9以上.     

反相液体色谱中饱和醇保留行为的研究 Ⅰ.低碳醇保留行为与溶质分子结构的关系

本文从吸附-疏溶剂理论出发,根据热力学平衡观点,导出了一定固定相和流动相时,描述溶质保留行为与其分子结构关系的理论模型,并用之预测了饱和醇的保留值,获满意结果。从而表明本模型不但能用于同系物,而且亦可用于同分异构体及立体异构体保留行为的预测。     

化学键联铁-钴四核羰基簇结构的EXAFS研究

本文以EXAFS方法研究了化学键联的四核铁-钴羰基簇[Co_(?)Fe(CO)_(12)]~-的表面结构。结果显示担载后Co—Co键长缩短0.04(?),Co—C和Co—Fe键长分别增长0.03和0.08(?),说明FeCo_3的四面体簇骼在担载后更大地偏离开理想的正四面体。     

应变速率和电位对应力腐蚀裂纹扩展的影响

以滑移-溶解-再钝化模型为基础,推导出应力腐蚀裂纹扩展速率与裂尖应变速率和电位之间的理论公式.计算表明,在裂纹扩展速率与裂尖应变速率的关系曲线中有两个特征区域.裂纹扩展速率在区域I随裂尖应变速率增加而增大,而在区域II不随裂尖应变速率的改变而变化.用慢应变速率拉伸技术（SSRT）测量了304L不锈钢的裂纹增长速率.当电位控制在区域II的阳极区时,理论计算的裂纹扩展速率与实验得到的结果比较吻合.     

JEE—4x型真空镀膜仪功能扩展

报道了对ＪＥＥ－４ｘ型真空镀膜仪蒸发装置的改进以及建立蒸发材料回收装置的具体方法，并介绍了改进后该仪器在高分辨扫描电镜样品制备上的应用实例．实验证明，上述改进不但扩展了ＪＥＥ—４ｘ型真空镀膜仪的制样功能又节省了蒸发材料，集中了离子溅射法及常规高真空镀膜法的优点，完全满足ＳＥＭ样品的分析要求，该方法简单易操作．     

离聚体的结构表征 Ⅲ.EXAFS法测定含氟的铜离聚体的精细结构

本文报道了用先进的EXAFS及ESR等方法研究了羧酸型含氟的铜(Ⅱ)离聚体离子微区的内部精细结构,结果表明,铜离聚体的离子微区主要由羧酸根桥键的双核配位结构单元及平面四方形的配位结构单元等聚集而成。在双核配位结构单元中第一层为Cu~(2+)—O配位,配位数为4,配位键键长为1.96A,第二配位层为Gu~(2+)—Cu~(2+)配位,Cu~(2+)—Gu~(2+)间距为2.64A。平面四方形的配位结构单元Cu~(2+)—O的配位数为4,配位键键长为1.96A。共聚物中羧基含量对离聚体的基本配位结构单元和离子微区的精细结构影响较小,但对微区大小有影响。