超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Quantum—Confined Stark Effect of Vertically Stacked Self—Assembled Quantum Discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.     

暗中空光束角动量与中性原子的相互作用及其应用

综述了暗中空光束自旋与轨道角动量的一些性质及其与中性原子之间的相互作用,并简单介绍了暗中空光束及其角动量在原子光学和玻色_爱因斯坦凝聚(BEC)以及各种原子光学器件研制方面的应用.     

模糊半群上的模糊同余及其扩张

给出模糊半群上的模糊同余的概念，并进一步研究它的一些基本代数性质。同时研究带有模糊半群上的模糊同余扩张性质(FCEPF)的半群类，得到一个半群有模糊半群上的模糊同余扩张性质、有模糊同余扩张性质(FCEP)、有同余扩张性质(CEP)三个条件是等价的。     

扩张代数的recollement

A是任意域k上的有限维代数. 证明了: 若无界导出模范畴D^-(Mod-A) 允许有关于有限维k-代数B和C的无界导出模范畴 D^-(Mod-B) 和D^-(Mod-C) 的对称的recollement 则A的平凡扩张代数T(A)的无界导出模范畴 也允许有如下对称的recollement:     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

Enhancement of Overall Photovoltaic Efficiency by Changing the Position of the Attaching Group -RSO3- on the Hemicyanine Dye Molecules

A new photoresponsive D-π-A dye, mPS, has been designed and synthesized.Compared to the parent dye PS, IPCE values in the region from 400 nm to 560 nm was greatly improved upon changing the attaching group from the p- position to the o- position of the π-conjugation bridge. A solar cell based on mPS generated a remarkably high overall yield η of 5.4% under irradiation of 80.0 mW cm^-2 white light from a Xe lamp, Compared with PS, the overall yield η increased by 64%.     

同位旋非对称核物质性质与扩展的BHF方法(Ⅲ)HVH定理与费米能量

在扩展的同位旋相关的Brueckner-Hartree-Fock理论框架内,在整个同位旋自由度范围内研究了质量算子的空穴线展开中不同等级近似下非对称核物质中Hugenholtz-Van Hove定理的满足程度,并计算了中子和质子的费米能量.结果表明为了使Hugenholtz-Van Hove定理达到令人满意的满足程度,需要同时考虑质量算子中的重排贡献和重正修正,从而指出了基态关联对于非对称核物质中单粒子性质的重要性.     

伪轨跟踪性质与不变概率测度

本文利用遍历理论讨论有伪轨跟踪性质的紧致度量空间上的连续满射所具有的动力性质和混沌性态．     

钻石型等级晶格上Gauss模型的临界性质

在Gauss模型中 ,假设Gauss分布常数依赖于晶格格点的配位数 ,并且满足关系bqi/bqj=qi/ qj( qi是格点i的配位数 ,bqi是格点i上的Gauss分布常数 ) .利用重整化群变换和自旋重标相结合的方法 ,研究了一族钻石型等级晶格上Gauss模型的临界行为 .结果发现 :这些晶格的铁磁相变性质属于同一普适类 ,其临界点和临界指数分别为K =b_qi/ q_i 和ν=1 / 2 .