A 168-W high-power single-frequency amplifier in an all-fiber configuration

We present a high-power,single-frequency,narrow linewidth fiber amplifier based on master oscillator power amplification chains in an all-fiber configuration.The effect of the delivery fiber on the maximum output power is studied.A home-made 1064-nm seed laser with a 20-kHz linewidth is boosted to 129 W,and limited by stimulated Brillouin scattering(SBS) when the delivery fiber is 1.2 m long.By shortening the delivery fiber length to 0.7 m,the SBS threshold is increased efficiently and the maximum output power rises to 168 W with an 82.9% power conversion efficiency.The experimental results indicate that the output power can be further raised by shortening the delivery fiber length and increasing the pump power.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.     

Performance of a superconducting single photon detector with nano-antenna

<正>The performance of single-photon detectors can be enhanced by using nano-antenna.The characteristics of the superconducting nano-wire single-photon detector with cavity plus anti-reflect coating and specially designed nanoantenna is analysed.The photon collection efficiency of the detector is enhanced without damaging the detector’s speed,thus getting rid of the dilemma of speed and efficiency.The characteristics of nano-antenna are discussed,such as the position and the effect of the active area,and the best result is given.The photon collection efficiency is increased by 92 times compared with that of existing detectors.     

Transparent and flexible field emission display device based on single‐walled carbon nanotubes

A fully transparent and flexible field emission device (FED) has been demonstrated. Single‐walled carbon nanotubes (SWCNTs) coated on arylite substrate were used as electron emitters for the FED and a novel metavanadate phosphor coated on the SWCNTs/arylite film was used as transparent and flexible screen. The SWCNTs/arylite based emitters and the SWCNTs/arylite/metal‐vanadate‐based phosphor showed a transmittance value of 92.6% and 54%, respectively. The assembled device also showed satisfactory transparency and flexibility as well as producing significant current. Metavanadate phosphor is considered to be an excellent candidate due to its superior luminescence properties and easy fabrication onto transparent and flexible conductive substrate at room temperature while retaining reasonable transparency of the substrate. Thus, its transparency and flexibility will open the door to next‐generation FEDs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved nonlinear optimization in the storage ring of the modern synchrotron radiation light source

In the storage ring of the third generation light sources,nonlinear optimization is an indispensable course in order to obtain ample dynamic acceptances and to reach high injection efficiency and long beam lifetime,especially in a low emittance lattice.An improved optimization algorithm based on the single resonance approach,which takes relative weight and initial Harmonic Sextupole Integral Strength (HSIS) as search variables,is discussed in this paper.Applications of the improved method in several test lattices are presented.Detailed analysis of the storage ring of the Shanghai Synchrotron Radiation Facility (SSRF) is particularly emphasized.Furthermore,cancellation of the driving terms is investigated to reveal the physical mechanism of the harmonic sextupole compensation.Sensitivity to the weight and the initial HSIS as well as dependence of the optimum solution on the convergent factor is analyzed.     

纳米尺度下切削过程的准连续介质力学模拟

采用准连续介质力学方法模拟了镍单晶体刀具在单晶铜工件上的切削过程,深入分析了切削过程中的能量演化?应力场变化和原子位移情况等因素.结合切削过程中位错滑移等塑性行为和原子径向分布理论,揭示了切屑产生的机理,证实了切削过程中已加工表面和体相晶体结构的非晶态变化是切屑产生的主要原因.通过对纳米切削过程不同阶段的模拟表明:刀具的耕犁作用下剪切带的形成和扩展是切屑形成的初始阶段;变质层的产生是纳米切削的中间阶段并构成了加工表面组织;储存在变形晶格中的变形能超过一定值时,晶格被打破,形成非晶态结构是切屑形成的最终阶段.     

红外非线性光学晶体CdSe生长与性能表征

采用垂直无籽晶气相法(VUVG)生长出尺寸达26 mm×45 mm的CdSe单晶体,对CdSe晶体的稳态气相生长速率进行了深入讨论.采用气相升华法提纯后的CdSe多晶原料的X射线粉末衍射谱与PDF卡片值(65-3436)吻合,生长出的单晶体{100}和(110)面XRD衍射峰尖锐,无杂峰,且{100}面出现3级衍射峰.晶锭密度为5.74 g/cm3,与理论计算值接近.退火处理后的晶片在1000～7000 cm-1 红外波段范围内透过率达到70;.采用VUVG法生长的CdSe单晶体,结晶性能好、结构致密、尺寸大和红外透过率高,可用于制备红外非线性光学器件.     

Thermodynamic driving force in ferroelectric crystals with a rank-2 laminated domain pattern, and a study of enhanced electrostriction

The thermodynamic driving force for domain growth in a rank-2 laminated ferroelectric crystal is derived in this article, and we used it, together with a homogenization theory, to study the issue of enhanced electrostrictive actuation recently reported by Burcsu et al. [2004. Large electrostrictive actuation of barium titanate single crystals. J. Mech. Phys. Solids 52, 823-846]. We derived this force from the reduction of Gibbs free energy with respect to the increase of domain concentration. It is shown that both the free energy and the thermodynamic force consist of three parts: the first arises from the difference in M₀ and M₁, the linear electromechanical compliances of the parent and product domains, respectively, at a given level of applied stress and electric field, the second stems from the electromechanical work associated with the change of spontaneous strain and spontaneous polarization during domain switch, and the third from the internal energy due to the distribution of polarizations strain and electric polarization inside the crystal. We prove that the first term is substantially lower than the second one, and the third one is identically zero with compatible domain pattern. The second one is, however, not exactly equal to the commonly written sum of the products of stress with strain, and electric field with polarization during switch, unless both domains have identical moduli in the common global axes. We also show that, with compatible domain patterns and when M₁=M₀, this driving force is identical to Eshelby's driving force acting on a flat interface due to the jump of energy-momentum tensor. Applications of the theory to a BaTiO₃ crystal subjected to a fixed axial compression and decreasing electric field from the [0 0 1] state reveal that the crystal undergoes a three-stage switching process: (i) the 0→90° switch to form a rank-1 laminate, (ii) the 0→180° switch inside the 0° domain to form a laminate I with a concurrent 90°→−90° switch inside the 90° domain to form laminate II, creating a rank-2-laminated domain pattern, and (iii) finally the 90→180° switch. It is the exchange of stability between the 0, 90°, and 180° domains under compression and electric field that is the origin of the enhanced actuation. We illustrate these intrinsic features by showing the evolution of these domains, and demonstrate how the reported large actuation strain can be attained with a rank-2 laminate.     

Transferring and Bounding Single Photon in Waveguide Controlled by Quantum Node Based on Atomic Ensemble

We study the scattering process of photons confined in a one-dimensional optical waveguide by a laser controlled atomic ensemble. The investigation leads to an alternative setup of quantum node controlling the coherent transfer of single photon in such one dimensional continuum. To exactly solve the effective scattering equations by using the discrete coordinate approach, we simulate the linear waveguide as a coupled resonator array at the high energy limit. We generally calculate the transmission coefficients and itsvanishing at resonace reflects the good controllability of our scheme. We also show that there exist two bound states to describe the localize photons around the cavity.